膜的形成過程 的英文怎麼說

中文拼音 [dexíngchéngguòchéng]
膜的形成過程 英文
film process
  • : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
  • : 4次方是 The fourth power of 2 is direction
  • : Ⅰ動詞1 (完成; 成功) accomplish; succeed 2 (成為; 變為) become; turn into 3 (成全) help comp...
  • : 過Ⅰ動詞[口語] (超越) go beyond the limit; undue; excessiveⅡ名詞(姓氏) a surname
  • : 名詞1 (規章; 法式) rule; regulation 2 (進度; 程序) order; procedure 3 (路途; 一段路) journe...
  • 過程 : process; procedure; transversion; plication; course
  1. With observing the topography of different time period by afm, the formation mechanism of five stages of ots molecular film was concluded. 4. tribological characteristics of ots self - assembled molecular film were studied by lfm. the effects of sliding velocity and load on frictional force were analyzed

    在研究中,通原子力顯微鏡( afm )觀察不同時間及不同溶劑組條件下ots自組裝分子貌,由此來判斷反應進,總結出ots自組裝分子生長模式五個階段。
  2. Gfp - oscam61 was transported into the nucleoplasm upon a block in isoprenoid biosynthesis by mevinolin treatment of tobacco cells. these results indicate that the prenylated oscam61 molecules are mainly membrane - associated while its unprenylated counterparts are transported into the nucleoplasm. thus, oscam61 may play functions in coordinating ca2 + signaling with isoprenoid metabolism

    用抑制異戊烯合途徑mevinolin處理轉化了gfp - oscam61煙草細胞,原來定位於gfp - oscam61則進入細胞核,說明異戊烯化oscam61結合在上而它非異戊烯化式存在於細胞核質中,因此, oscam61同時受鈣信號和異戊烯代謝調控,並可能在鈣信號傳遞和異戊烯代謝協調中發揮功能。
  3. The dissertation firstly discusses the reflectance of euv and soft x - ray in " multilayer system based on classical electrodynamics and optical characteristics of materials. the nns surface roughness in different spatial frequency range is carefully studied since scattering can seriously reduce the reflectance in euv and soft x - ray wavelength region. we discuss representative model of residual stress in

    首先從材料在極紫外、軟x射線波段光學特性出發,討論了極紫外、軟x射線在理想和非理想多層系中反射特性;研究了影響極紫外、軟x射線多層反射率表面粗糙度空間頻率范圍;重點探討了多層殘余應力典型模型、應力機制以及薄膜的形成過程
  4. Scanning electron microscope ( sem ) and x - ray photoelectron spectroscopy ( xps ) studies indicated that the additive of cs _ 2 took part in the sei film - forming in the process of battery cycles. the elements of carbon, oxygen and fluorin are the main members in the compounds of sei film. sulfur is also one of the main elements of the sei film when the electrolyte included additive of cs _ 2

    利用掃描電子顯微鏡和x射線光電子能譜研究表明,二硫化碳在電池循環中參與了sei, sei物質中主要是c 、 o 、 f三種元素,加入二硫化碳后, s元素也為主要組分, sei主要組物質有烷基氧鋰、烷基碳酸酯鋰、碳酸鋰、硫酸鹽、聚烯烴及氟化鋰等。
  5. Nucleoli do not emerge in this process. the number of the organelles increase until secondary spermatocyte stage. mitochondria accumulate together, merging together with lysosomes and golgi bodies at the early spermatid stage, and finally the lamellar structure is formed, which forms the acrosome at last

    在精子發生中,線粒體、內質網和核糖體逐漸增多,其中線粒體數目在次級精母細胞階段達到頂峰,並線粒體區,精細胞早期核內出現性泡結構,同時次級溶酶體與高爾基體大量存在,這些細胞器共同片層復合體,並參與頂體
  6. Ip3 is one of the key factors for ca2 + to release from calcium - storage and for oocytes to be activated. in this experiment, ip3 was guided into cytoplasm by instant holds on cell membrane which were made by electric stimulation, calcium - storage in cytoplasm was opened up with ip3s second messenger, and the effects of ip3 on artificial activation of oocytes was evaluated, with ca2 + waves of zygote being imitated

    本實驗利用電激活中卵母細胞瞬間孔洞,向卵子內導入一定量ip _ 3 ,通ip _ 3第二信使途徑,打開胞內鈣庫,模仿自然受精中卵母細胞內ca ~ ( 2 + )波動性變化,研究電場導入ip _ 3對小鼠卵子激活作用。
  7. ( 2nyith n - a isotherm curves and n - t time curves, the adsorption beboen huinan serum albumin ( hsapo are on sufohases with arerent ph values is also systemahall studied, the result demonsan tha the veboty of adsorption and desorption of hihb and hsa gets to equation after about 1 hour. the collapse pressare and the mean area per molecul of monolayer keeps w aha the dsrption compared with tha prio to the adsorption, whil the hsa originall adsoibed on hihb is foed ou of the ds of m monofayer

    結果表明, hsa在hihb單分子面下吸附解吸平衡在本實驗條件下約二小時達到; hsa在單分子二次壓縮前期可能參與,在壓縮中,吸附在hihb上hsa逐漸被擠出單分子面, hsa存在基本不影響單分子崩潰壓和平均分子占據面積。
  8. The mechanisms of diamond nucleation and growth are discussed, and it is believed that the continued ion bombardment during the deposition process is a key factor for the growth of nanocrystalline diamond film using ch4 and h2

    探討了金剛石核化機制和納米金剛石機制,認為沉積持續離子轟擊是ch _ 4和h _ 2體系制備納米金剛石薄關鍵。
  9. In the growth of c - bn films, the bombardment of particles with high energy plays a vital role

    在立方氮化硼中,高能粒子對薄轟擊起著至關重要作用。
  10. Nucleoli exist from spermatocyte stage to early spermatid stage. in this process, the numbers of ribosomes, mitochondrions and endoplasmic reticulums increase until secondary spermatocyte stage, golgi apparatus emerges at the secondary spermatocyte stage, and then, these organelles change into lamellar complex which finally forms the acrosome

    核糖體,線粒體和內質網等細胞器數量逐漸增多,到次級精母細胞階段達到最大,在精子中,上述細胞器與高爾基體及性泡共同分化或參與片層小體,並參與頂體
  11. The formation process, dynamic variation, deciduous causes of oxide film of work roll are analyzed, and the control methods have been put forward

    分析了氧化膜的形成過程、動態變化及脫落原因,並提出了控制方法和措施。
  12. Through the ir transparent spectra, we found anion of anodizing electrolytes, also participate the formation of porous membrane during the anodizing procedure

    ir光譜譜線發現,在陽極氧化中,電解液中陰離子也參與了多孔
  13. Anodization of high purity al foil in phosphoric acid solution at different pressures was experimentally studied to understand the formation mechanism of the nano - porous anodic alumina membranes

    摘要為探討多孔鋁陽極氧化機理,研究了不同氣壓條件下鋁在磷酸溶液中陽極氧化,發現在真空下進行陽極氧化,氧氣析出非常明顯。
  14. The purpose of this study is to investigate the formation of liquid falling film and its flow behavior on the surface of a horizontal twisted and fluted tube used in the case of wet flue gas desulfurization, desalination, and so on

    本文從理論上研究了水平螺旋槽管壁面液機理及流動特性,為工業生產中高效換熱器應用提供理論基礎。本文做主要工作有: 1
  15. In this work, zno thin films were prepared by sol - gel method on the glass substrate in order to study the influence of the preparation techniques on the crystallization, orientation and morphology of the films. we adopted a two - step heat treatment technique to optimize the micrcjstructure of the films, and subsequently discussed the forming process of the zno thin films

    本論文研究了在載波片和si ( 001 )上溶膠凝膠旋塗法制備工藝對薄結晶、取向狀況以及薄影響,探討了溶膠凝膠旋塗法制備氧化鋅薄膜的形成過程,同時引入兩步熱處理方法來優化薄結構。
  16. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積( rf - pepld )方法在常溫下( 25 )制備立方氮化硼( c - bn )薄,初步研究了薄沉積參數:激光能量密度、射頻功率、基底負偏壓和鍍時間對立方氮化硼薄生長影響,並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  17. The main works are shown as the below : ( 1 ). langmuir monolayer of behenic acid and dppc surfactants behenic acid is a classical amphiphile, it has been applied to prepare functional lb films and quantum semiconducting particle films. therefore, it is of essential importance to study behenic acid monolayer at the air / aqueous interface ; at additional, in the different subphase ( h2o cdcl2 ) conditions behaviors of behenic acid monolayers have been studied ; moreover, we study dppc monolayer at the aqueous subphase, stability of dppc at the different surface pressures and speed rates

    研究內容如下: ( 1 )二十二酸、 dppc單分子性能研究主要研究典型小分子化合物(二十二酸)在純水和金屬離子cd ~ ( 2 + )兩種亞相下分子聚集,詳細討論了和相變,分析了純水和金屬離子cd ~ ( 2 + )兩種亞相情況對各狀態下靜態彈性影響;同時考查dppc單分子相變,同時研究了在不同壓力處、不同壓速度條件下對分子穩定性影響。
  18. It is found that both the formation of the perovskite and contents of the crystalline phase in this pst thin film are dependent on the preparation processing and activity of an atom moved for nucleation and crystallization

    證實了利用溶膠凝膠法制備pst薄鈣鈦礦晶相及晶相含量受制備及晶相時離子活性所控制。
  19. Heat transfer during gas hydrate film formation on gas - liquid interface

    液界面處水合物傳熱分析
  20. The experimental evidences indicated that three deposition parameters, i. e., energy density of laser, rf plasma power and substrate negative bias played key roles in the growth of the c - bn films at room temperature. on this basis, the explanation of formation process and mechanism of c - bn film was given

    分析各個沉積參數在薄生長中作用,證明三個沉積參數:激光能量密度、射頻功率和基底負偏壓是室溫下生長立方氮化硼薄關鍵因素,並在此基礎上初步解釋了立方氮化硼薄膜的形成過程及機理。
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