致偏電極 的英文怎麼說

中文拼音 [zhìpiāndiànjí]
致偏電極 英文
deflecting electrode
  • 致 : Ⅰ動詞1 （給與;向對方表示禮節、情意等） deliver; send; extend 2 （集中於某個方面） devote （one s ...
  • 偏 : Ⅰ形容詞1 （不正; 歪斜） inclined to one side; slanting; leaning 2 （只側重一面） partial; prejudi...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 電極 : electrode; pole
  1. The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion

    在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。
  2. The photo - induced phase transition of the different light intensities, photo - energies and directions of the polarized light is investigated. it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films. the relation between the he - ne laser reflectivity of the thin film, applied current and resistance was analyzed by the optics theory of solid state physics

    光子通過激發e _ g向下電子的躍遷，從而改變材料自旋極化方向，影響體系的輸運行為；首次研究了cmr薄膜的激光反射率和偏置電流的關系，並用固體光學理論對其定性分析，表明反射率的變化是由於電場引起材料的晶格畸變，改變了極化率，從而導致材料的折射率和反射率發生改變。
  3. In this paper, we first investigate the impurity effect ( ba2 + ) on the dielectric and phase transition properties in srtio3 within the framework of the transverse - field ising model ( tim ). then a possible coupling mechanism between the magnetism and dielectric properties in eutio3 is discussed and the magnetic influence on the frequency of the soft - phonon mode is investigated via the heisenberg model, soft - mode theory under the mean field approximation, the second quantization theory and the perturbation theory. and we proceed further investigation on eu1 - xbaxtio3 of

    我們發現baxeul _ xtio3 （ o 『 x 『 0 . 2 ）的介電常數和由內察的偏置場導致的電極化除了隨雜質濃度產生相應的變化，同時在磁和介電性質的藕合作用影響下在低溫下偏離通常的量子順電體行為，在尼爾溫度附近出現異常，且磁場通過對最近鄰自旋關聯的作用來影響介電常數和電極化。
  4. In chapter three, the mechanism responsible for scanning probe field - induced oxidation in ambient air is attributed to an electrochemical process, i. e., anodic oxidation or anodization, after the analyses is given of a surface of a sample exposed to air. the effects of biases, tip speeds on morphology of field - induced oxidation, are introduced and deduced in the form of kinetics formula of oxidation growth

    第三章首先通過分析大氣環境下掃描探針場致氧化加工的基本特性，得出掃描探針場致氧化的加工機理為電化學陽極氧化反應；引進大氣狀態下場致氧化的動力學方程，推導出偏置電壓與場致氧化物的幾何形態兩者之間的關系、掃描探針移動速度與場致氧化物的幾何形態兩者之間的關系。
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