薄層導電率 的英文怎麼說
中文拼音 [bócéngdǎodiànlǜ]
薄層導電率
英文
sheet conductivity- 薄 : 名詞[方言] (浮萍) duckweed
- 層 : i 量詞1 (用於重疊、積累的東西 如樓層、階層、地層) storey; tier; stratum 2 (用於可以分項分步的...
- 導 : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 率 : 率名詞(比值) rate; ratio; proportion
- 薄層 : sheet; thin layer; seam; thin wall; leaf; flash; lamelli; lemell-; lamin-
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Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied
氧化銦錫( ito )是一種高簡並的n型半導體,由於具有導電性,可見光高透過率,紅外反射性,穩定的化學性,被廣泛應用於熱反射建築玻璃、抗靜電塗層,太陽能電池,熱發射鏡,平板顯示器和液晶顯示屏,傳感器,有機光致二級管( oled )等方面,國內外對高質量的ito薄膜的制備和應用進行了深入的研究,但是很少有ito納米粒子與高分子材料復合的報道。Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, aln thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super - large scale integrated circuits, insulating layers or passivation layers for semiconductor
超薄鋁膜由於其特殊的的光學性質,在光學多層膜上有廣泛應用。氮化鋁薄膜化學穩定性高、熱傳導率高、機械強度高、電絕緣性能佳、高能隙、熱膨脹系數低,光學特性優良,可以用作大功率的紫外光學器件的散熱材料。We also find that the strong long - range interaction, the large transverse field and weak interfacial coupling can lead to the disappearance of some of the peaks of the pyroelectric coefficient and susceptibility of the ferroelectric bilayer. we believe that it is the reason why these phenomena always take place in the experimental studies
我們還發現,較強的長程相互作用,較大的橫場以及相對較弱的界面耦合作用將會導致鐵電雙層薄膜的熱電系數和介電極化率的某些峰消失,這可以用來解釋在實驗中常常觀測不到熱釋電系數和介電極化率的某些峰值的原因。In the framework of the long - range interaction, we study the interfacial effects on the pyroelectric and dielectric susceptibility of a ferroelectric bilayer for the first time. we find that the quantum effect can lead to the disappearance of some of the peaks of the pyroelectric and susceptibility of the bilayer
我們首次在長程相互作用的框架內,考察了界面對雙層膜的熱電、介電等物理性質的影響,且量子效應的增強會導致鐵電雙層薄膜的熱電系數和介電極化率的某些峰的消失。The experiments show that the main origins of causing the oil and water zones complicated in the study area on the one hand is pore structure, fine particle size and shale content high, resulting in saturation of irreducible water of the reservoirs varying greatly, on the other hand is mud invasion influence, resulting in the reservoir receptivity decreasing, and the third is the thin bed is restricted by logging resolution, resulting in measure value influenced by the bed thickness
研究得出,研究區復雜油水層主要成因一是儲層孔隙結構復雜,巖性細,泥質含量高,導致儲層束縛水飽和度變化大;二是泥漿侵入影響,導致油層電阻率降低;三是薄層受測井分辨能力的限制,其測量值受層厚影響。Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy - current gage
半導體矽片電阻率及硅薄膜薄層電阻測定非接觸渦流法Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug
多晶硅薄膜晶體管( p - sitft )液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗,因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。Firstly, as an important optical thin film, it has the many good properties of high transparence in visible region, high refractive index, high chemical stability, high strength and high degree of hardness, which applied widely to anti - reflection coatings, interference filters, electrochromism windows and thin film optical waveguides
作為光學膜, tio _ 2薄膜在可見光區透射率高,折射率大,化學穩定性高、強度大、硬度高,是非常重要的光學膜,已被廣泛地應用於抗反射塗層、干涉濾波片、電致變色窗和薄膜光波導。The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根據柱狀結構存在各向異性的特點,並根據半導體物理知識,推出光導層光生載流子橫向最大擴散長度(該擴散長度與液晶光閥光導層解析度直接相關)與薄膜橫向和縱向電導率關系的表達式為:由於a - si : h在al金屬的誘導作用下在不高於250的溫度下即開始晶化,本文對用金屬al誘導非晶硅晶化制備的nc - si a - si : h薄膜進行研究。This means that the dielectric property changes with height and allows a slight increase in the speed of a radio wave as we move upwards through the atmosphere. this in turn means that if a radio wave moves away from the earth at an angle less than 90 degrees, then the upper part of the wave travels faster than the lower part. therefore even under normal conditions this can in effect bend, or refract, the wave back down to earth
其中一種顯著的現象是:在一定的氣象條件下,在大氣邊界層尤其是在近地層中傳播的電磁波,受大氣折射的影響,其傳播軌跡彎向地面,當曲率超過地球表面曲率時,電磁波會部分地被陷獲在一定厚度的大氣薄層內,就好像電磁波在金屬波導管中傳播一樣,稱為大氣波導傳播,形成波導傳播的大氣薄層稱為大氣波導層。分享友人