薄片制備 的英文怎麼說

中文拼音 [bópiānzhìbèi]
薄片制備 英文
preparation of thin sections
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 片 : 片構詞成分。
  • 制 : Ⅰ動詞1 （製造） make; manufacture 2 （擬訂; 規定） draw up; establish 3 （用強力約束; 限定; 管束...
  • 備 : Ⅰ動詞1 （具備; 具有） have; be equipped with 2 （準備） prepare; provide with; get ready 3 （防備...
  • 薄片 : slice; thin slice; thinsection; scaleboard; microsection; sheet; lamina; wafer; flake; lepid ; le...
  1. Tio2 thin films with super hydrophilicity were deposited onto soda - lime glass using the spray pyrolysis method, and the films doped with different content of fe3 + or zn2 + were also prepared

    根據防霧易清潔玻璃的性能要求，利用噴霧熱解法，以透明載玻片為基板進行薄膜的制備。
  2. The iron doped tio2 thin films showed almost no photocatalytic activity for the photodegradation of no in the gaseous phase when the calcination temperature was lower than 400 c. this was due to the fact that the phase structure of the film was amorphous. at 400 c, the film appeared obviously photoactive du

    對于用液相沉積法所制備的tio :薄膜，薄膜中的si （或fe ）含量和薄膜的厚度可通過調節前驅體濃度、溶液的ph值、基片的沉積溫度和沉積時間，薄膜的熱處理溫度和時間進行有效地控制。
  3. The main conclusions with innovative features acquired from the present work are as follows : ( 1 ) soft solution processing technique for preparing functional thin films was put forward and applied to preparing advanced inorganic functional thin films ; a series of molybdate and tungstate films with scheelite - type were prepared directly on metal substrates ( molybdenum and tungsten foils ) by using constant current electrochemical technique at room temperature ; a series of titanate thin films with perovskite - type were synthesized directly on titanium flakes by hydrothermal method in our country for the first time

    通過上述研究工作，得到了如下具有創新性研究成果： （ 1 ）首次在國內提出和運用軟溶液制備工藝技術進行無機功能薄膜材料的制備研究；首次在國內採用室溫恆電流電化學技術直接在金屬基底（鉬片和鎢四川大學博士學位論文片）制備了白鎢礦結構的鋁酸鹽、鎢酸鹽薄膜;首次在國內採用水熱合成技術在欽金屬片上直接沛叮備了鈣欽礦結構的欽酸鹽薄膜。
  4. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  5. Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )

    當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。
  6. Promax tension ind corp has long sold and manufactured a variety of custo mized air shafts / air chucks / safety chucks, edge position control systems / epc, powder / air / disk brakes and clutches, ac / dc motor control systems, re - winding / un - winding systems, tension control systems, web inspection systems, automatic color register systems, servo - vector control systems, mmi interface and supervisory control and data acquisition ( scada ) systems and others such as slitting, winding, laminating, extruding, coating, and gravure printing machines, even other auxiliary devices etc. for webs such as paper, films, rubber, textiles and foils

    本公司長久以來已經從事製造及銷售有關紙類，薄膜，膠片，紡織品，橡膠等薄片卷材的捲筒物控制糸統周邊設備，諸如氣漲軸，氣漲/安全夾頭，邊緣追蹤器裝置，磁粉/氣壓/碟式煞車器及離合器，交直流轉矩馬達控制系統，收放料車動系統，張力控制裝置，印刷機靜態觀測器，自動套色控制裝置，伺服向量控制系統，人機介面及監控系統及其他有關印刷，貼合，分條，復? ，塗布，上膠，押出，淋膜等產業機械
  7. Sol - gel method was used for preparing the nano - tio2 photocatalytic film on general glas slid and ito conductive glass. the spectrum property, surface image, crystlal type, particle size, thickness and other properties of this film were measured by uv - vis, afm, xrd and other apparatus

    採用溶膠-凝膠法在普通玻璃載波片和ito導電玻璃上制備出負載型納米tio _ 2薄膜，並用uv - vis ， afm ， xrd等對納米tio _ 2薄膜的光譜特性、表面形貌、晶型及粒子大小、薄膜厚度等進行了表徵。
  8. Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique, the center position of substrate and the target is in a 18mm offset, the thickness distribution homogeneity is under 8 %. based on the analyses of the theoretic heat distribution for the radiant heating system, a 3 inch size radiant heater fitting for the requirement is designed and made, whose temperature difference is under 6 %

    其次，對3英寸范圍內的膜厚分佈進行了理論模擬，在此基礎上和試驗結果對比分析，發現：在倒筒靶直流濺射裝置下，如果採用一種讓基片中心和靶中心處于相對偏心距離為18mm的位置來制備3英寸薄膜，其膜厚分佈的均勻度范圍控制在8以內。
  9. The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique

    =本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。
  10. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  11. Other major types of containers, such as steel, aluminum, plastics and paper, are first produced as ingots, pellets, powder or sheets in one or more factories and then reworked into articles in other facilities

    其他種類的容器，如鐵制容器、鋁制容器、塑料容器和紙制容器，都必須在一個或幾個工廠里先製成金屬錠、小球、粉末或薄片，然後在通過其他設備再加工製成所需的產品。
  12. There are better performances in the films prepared by ba2ca2cu3ox target than by ba2cacu2ox target. the single - phase tl2ba2cacu2o8 hts thin film was obtained with a tc0 of 107k at the optimal tl2o partial pressure and thallination temperature 750. on excursion from the optimal conditions, there exist some impurities in the resultant films resulting in a reduction in tc0 and surface quality with change in the microstructure morphology

    研究結果表明，採用成分為ba2ca2cu3ox的靶材制備的薄膜性能要優于成分為ba2cacu2ox的靶材；使用組成式為tl1 . 9ba2ca2cu3oy的鉈片做鉈源時，形成的tl2o分壓達到最佳值；在最佳tl2o分壓和最佳鉈化溫度750的條件下，制備出了純相完全c軸取向的tl2ba2cacu2o8高溫超導薄膜，其tc0高達107k ，膜面均勻平整光滑，呈圓片狀組織；偏離最佳制備工藝參數的條件下，制得的薄膜中都含有一定量的雜相，雜相的生成使得tc0值下降，薄膜表面質量下降，薄膜組織形貌發生變化。
  13. And then, zno thin films were synthesize on quartz and silicon substrates by sol - gel dip - coating and spin - coating. the properties of the films and the effects of growth parameters on the quality of zno films were studied using x - ray diffraction, optical absorption, photoluminescence techniques, etc. to modify the energy gap of the zno, mg2 + was added in the sol - gel solution, and mgxzn1 - xo films were prepared by the same method as that for zno films

    利用溶膠凝膠法成功地在石英玻璃和單晶矽片等襯底上制備出了c軸擇優取向的zno薄膜，並利用x射線衍射儀、紫外-可見光光譜儀、熒光光譜儀等對zno薄膜的結構和性能進行了測試、分析，並研究了熱處理參數等條件對zno薄膜性能的影響。
  14. To make cds / k4nb6o17 powder on the base of the k4nb6o17 powder which by the courses of ion exchanging, amine intercalation, sulfuration etc. to obtain cds / k4nb6o17 thin film through the same course of making cds / k4nb6o17 powder on the base of k4nb3o17 thin film on the quartz which made by the spin coating and after heat treatment. to make experiments with additives ( na2so3, 0. 1mol / l ) of photocatalytically decomposing water into h2 and o2 to evaluate the photocatalytic activities of the catalyst knb6o17 powder, cds / k4nb6o17 powder, k4nb6o17 film, cds / k4nb6o17 film. the crystalline structures of the midst powder and film productions were investigated by using the x - ray diffraction ( xrd )

    本課題的主要內容是：高溫固相反應合成具有層狀結構的k _ 4nb _ 6o _ （ 17 ）晶體材料，然後以此為母體材料，通過離子交換、層間胺插入、硫化處理等過程制備出cds / h _ 4nb _ 6o _ （ 17 ）粉末形式的光催化材料；通過旋轉塗覆法在石英玻璃基片上制備了k _ 4nb _ 6o _ （ 17 ）薄膜，採用一定的熱處理制度后對薄膜分別進行離子交換、層間胺插入、硫化處理等處理過程制備了cds / h _ 4nb _ 6o _ （ 17 ）薄膜形式的光催化材料。
  15. The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd. when the temperature ( ts < 450, ta < 800 ) is low, the structure of the samples is still amorphous. the majority content of the sample is sio 90 by the aid of xps

    利用雙離子束濺射沉積技術，通過共濺射方法制備了si - sio _ 2薄膜，研究了沉積時間、工作氣壓p _ （ ar ） 、基片溫度等對沉積速率的影響，用tem和xrd分析了樣品的結構。
  16. Study on the technology for the water - film coating of guxian tablet

    替米沙坦薄膜衣片制備工藝的研究
  17. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  18. The properties of crystalline carbon nitride films ( cn ) on silicon substrate have been explored experimentally by the pe - pld and pe - cvd method. the relation between different deposition parameter and the structure properties of cn compound films is analyzed ; the deposition mechanism of the cn films is studied. cn thin films with up to 21at % nitrogen content have been prepared by pld method

    本論文採用pe - pld技術和pe - cvd技術，以si基片為襯底對晶態cn薄膜制備進行了實驗探索，主要探討不同工藝條件和cn化合物薄膜的結構特性之間的關系，研究晶態si基cn薄膜的生長機理。
  19. Both conventional and liquid - based pap smears showed the characteristic morphological features of this tumor

    在常規的和液態薄層制備技術的子宮頸抹片中都表現出小細胞上皮癌典型的細胞學形態。
  20. Study on preparation and dressing of nano - graphite sheets

    納米石墨薄片制備及修飾的研究
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