薄膜生長 的英文怎麼說

中文拼音 [bómóshēngzhǎng]
薄膜生長 英文
film growth
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 薄膜 : thin film; film; diaphragm
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. The structurally perfect and high - quality ba0. 5sr0. 5tio3 single - crystalline thin films were prepared on laalo3 and mgo substrates by pulsed laser depositioa the ba0. 1sr0. 9tio3 / yba2cu3o7 - heterostructure films were fabricated by pulsed laser deposition on a vicinal laalo3 su bstrates

    詳盡地分析這些薄膜的衍射圖樣可知，薄膜都是以外延特性生長的而且晶體質量良好，但薄膜生長模式及表面平整度受沉積條件影響較大。
  2. Various attempts have been made to study the effect of electrochemical polymerization processes including temperature, electrolyte composition and the deposited location on the strength and brittle - tough properties. by the mechanical measurement and testing, we found, compared with the mixed electrolyte composition of isopropyl alcohol ( ipa ) + 5 % boron trifluoride diethyl etherate ( bfee ) + 5 % polyethylene glycol ( peg ), the better mechanical properties of conducting ppy films were given by the mixed electrolyte compositon of ipa + 5 % bfee + 5 % deg

    結果發現，當添加劑peg的濃度不變時，改變bfee的濃度可以改變薄膜材料的性能，其中以30的bfee濃度為最佳；當固定電解液中bfee濃度不變時，改變添加劑的濃度對制備的薄膜性能參數影響不明顯，但以peg100為臨界；降低溫度，可以使薄膜生長減緩，有利於得到性能更好的薄膜。
  3. A monte - carlo method has been developed for simulating the growth of epitaxy flims. the program was compiled using turbo basic language. the influence of growth rate and temperature on surface morphology was studied. the model we used was an advanced diffusion limited aggregation ( dla ) model. the process of deposition and diffusion were considered in this model

    本文利用montecarlo方法，結合薄膜生長理論，採用turbobasic語言編寫程序，對外延薄膜的生長過程進行了模擬。所用的模型為改進的擴散有限聚集模型（ dla ） ，研究了薄膜生長過程中沉積速率和襯底溫度對表面形貌的影響。
  4. Simulation of the initial growth of metal thin films at high temperature

    高溫下金屬薄膜生長初期的模擬研究
  5. The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film

    晶格失配對異質外延超薄膜生長中成核特性的影響
  6. In addition, the growth temperature of films in high substrate temperature process is more similar to that of the single crystal growth in which the hexagonal system shows the sheet growth habit

    高溫下的薄膜生長更接近於單晶的生長條件，六角晶系晶體的結晶習性是片狀生長，表現為片狀的單晶，這種習性受晶體自身結構特性的限制。
  7. We also optimized the parameters of growth process, based on the investigation of film character, produced at different temperature and different anneal time

    通過研究不同溫度、不同保溫時間對薄膜生長的影響，得到了優化的薄膜生長參數。
  8. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  9. Simulation of fractal growth of ultra - thin films via electro - deposition

    電沉積超薄膜生長的模擬研究
  10. In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )

    本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷；初步探討了金剛石薄膜生長的動力學過程；並採用輝光等離子體輔助化學氣相沉積（ cvd ）技術制備得到了n型金剛石薄膜。
  11. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  12. Hence, it is considered that the high nucleation density integrated with low substrate temperatures causes the growth of nanocrystalline p - sic films effectively

    因此，高的形核密度與低的襯底溫度是促進納米- sic薄膜生長的關鍵因素。
  13. Computer simulation and the modeling of thin film growth

    薄膜生長模型與計算機模擬
  14. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  15. The sto, ybco and sto / ybco thin films were deposited on laalo3 ( 001 ) ( lao ) substrate by pulsed laser deposition ( pld ). the effects of deposition parameters, such as the substrate temperature, the of target - substrate distance, laser energy density, on the properties of the thin fillms were systematically studied. the surface morphology of the thin films was investigated by atomic force microscopy ( afm ) and scanning electron microscopy ( sem )

    採用脈沖激光沉積技術在laalo3 （ 001 ） （ lao ）基片上生長ybco 、 sto以及sto / ybco集成薄膜，系統研究了基片溫度、基片表面狀態、氧分壓、激光能量密度、脈沖重復頻率等工藝參數對薄膜表面性能、結晶情況的影響，優化了ybco 、 sto薄膜生長的工藝參數，運用afm 、 sem 、 xrd等分析手段表徵薄膜的微觀性能，分析結果表明：薄膜表面平整、結晶良好、 c軸織構。
  16. So the growth technology of lsco thin films on different substrates has been studied. the round plate lsco ceramic targets were prepared with traditional sintering technology

    就此開展的lsco薄膜生長工藝研究取得了以下結果: 1 .研究了lsco粉末的溶膠凝膠自燃燒工藝，並制備了lsco靶材。
  17. The results indicated that dmzn flow rate predominately controlled the growth rate of znse epilayer in this work

    研究發現實驗中znse薄膜生長速率主要受dmzn流量控制。
  18. By using theoretical calculation and rheed monitoring, the strain behavior in heteroepitaxy of ferroelectric oxides thin films was designed and controlled experimentally

    通過理論預測和rheed的檢測，控制氧化物薄膜生長，特別是控制鐵電氧化物薄膜生長中的應變行為。
  19. Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

    Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。
  20. Investigation of au au film epitaxial growth by kinetic monte carlo simulation

    外延薄膜生長的計算機模擬及其微觀機制研究
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