蝕刻孔 的英文怎麼說
中文拼音 [shíkèkǒng]
蝕刻孔
英文
etch hole-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。According to theoretic and experimental investigation, crystal direction has nothing to do with forming square - holes
通過理論和實驗研究，發現即使矽片晶向不準，仍能刻蝕出方孔列陣。Nuclear particle track - etched anti - counterfeit marking is a new weapon against fake products. the mark is manufactured by intricate high technology in state - controlled sensitive nuclear facilities which ensures that the mark can not be copied. the pattern of the mark is characterized by its permeability, and can be distinguished from fakes by using a transparent liquid ( e. g. water ), colored pen or chemical reagent. the technique has passed the official health safety examination and poses no danger of nuclear irradiation
用核粒子照射塑料薄膜形成徑跡，再經化學試劑蝕刻和成像技術，得到由微米級微孔組成的圖案.這種圖案具有物質透過特性.用這種方法生產的核徑跡防偽標志，具備核尖端技術不易擴散，製作設備不易得到，產品用其他方法難以偽造，防偽識別簡單、快速、可靠等特點.此種標志已經通過放射性安全檢測，可以用於各種商品（包括食品）的包裝This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step
提出採用紫外光刻工藝製作傳統波導結構之後，通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案，大幅度減低了製作成本；設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板，在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構，在該結構上成功實現了光子晶體帶隙波導的電子束曝光，帶隙波導與接續光波導位置接續良好；最後利用預留槽進行了刻蝕犧牲層的實驗，為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。The n - type ps ( 80 ? cm - 100 ? cm ) had been immersed in the mixture of amine ( ( c2h5 ) 3n : c2h4 ( nh2 ) 2 = 3 : 2 ) for twenty minutes, then carried on rapid thermal oxidation ( rto ) through a quartz tube and oxidized in a floating oxygen ambience ( 0. 5 l / min ) at the temperature 400 for 30 s
N型（ 80 - 100 ? cm ）矽片刻蝕后的多孔硅在胺液中浸泡20min ，然後在氧化爐中進行熱退火，退火溫度在400時， o _ 2流量為0 . 5l / min的條件下退火30秒，在紫外燈照射下，所得ps發藍白光。The oxidizing parameters of the anodization in the following experiments were preferred on the basis of measuring the dependence of pl properties ( peak position, and max intensity, etc. ) on anodization conditions, such as the anodizing current density, the time of the anodization, the concentration of the solution ( mainly of hf ), and on the doping level of the substrate
刻蝕時間、刻蝕液配比及襯底電阻率對pl發光強度、峰值波長等性質的影響。在此基礎上優化出制備多孔硅的具體參數。對不摻sb與摻sb的snci 。分享友人