衍射測量術 的英文怎麼說

中文拼音 [yǎnshècèliángshù]
衍射測量術 英文
diffractometry
  • 衍 : [書面語]Ⅰ動詞（開展; 發揮） spread out; develop; amplifyⅡ形容詞（多餘） redundant; superfluousⅢ名...
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 測 : 動詞1. （測量） survey; fathom; measure 2. （測度; 推測） conjecture; infer
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 術 : 術名詞1. （技藝; 技術; 學術） art; skill; technique 2. （方法; 策略） method; tactics 3. （姓氏） a surname
  • 測量 : measure; survey; gauge; meter; measurement; measuring; surveying; mensuration; metering; gauging;...
  1. This multi - purpose optical metering system had adopted the twyman - green interferometric system as its center, containing an advanced digital wave surface interferometry and a kind of homodyne interferometer displacement testing method with nanometer - sized capacity. at the same time, many wide - applied metering technology, for example, the diffracted field ( fringe ) measurement, co - focal lens system, optical fiber sensors and 4f ( focal distance ) space filter system which can embody the chief principle of fourier optics well, were combined into it successfully. this instrument can firstly offer and show modern optical testing method in the laboratory for majors of information processing, instrument science, measuring and testing technology and automatic technology

    該多功能激光光電實驗系統以泰曼-格林干涉（ twyman - green ）光路作核心，包括先進的數字波面干涉技術和一種基於空間干涉原理的、納米解析度零差干涉儀位移測量方法，同時將多種新穎、工程實用價值高的測量技術和光路如衍射測量、共焦顯微技術、光纖傳感技術以及反映傅立葉光學基本光學原理的4f空間濾波系統也組合進去。
  2. By contrasting the dimension and appearance of fe of different precursors, verified it is true that the dimension and appearance of precursor affect these facets of fe. modern measures, for instance xrd, tem, sem, laser and infrared technique etc. are used to research the technique indexes of sfp of fe, such as crystalline, dimensions and its distribution, shape and appearance, assemble status and its oxygen content

    對所制備的超微fe粉，採用x射線衍射法（ xrd ） 、透射電鏡法（ tem ） 、掃描電鏡法（ sem ） 、激光衍射粒度分佈測定法以及紅外測氧法等現代分析測試手段，詳細考察了超微fe粉的晶態、尺寸、粒度分佈、形貌與團聚狀態、氧含量等多項技術指標。
  3. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ). based on grazing incidence x - ray diffraction ( gixrd ) equipment, we find that residual stress exist in magnetron sputtering plct film, in addition, the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system

    利用廣角x射線衍射技術對不同濺射工藝下plct薄膜的相結構進行了研究;採用掃描電子顯微鏡（ sem ）和原子力顯微鏡（ afm ）分別觀察了薄膜的表面形貌;利用掠入射x射線衍射（ gixrd ）測量了薄膜的殘余應力。
  4. The serious bursting accident of the main steam pipe was analyzed 3 by applying the research results above in chapter 4. the main steam pipe has serviced for 12 x 104h in the power plant. using scanning electron microscope ( sem ), x - ray diffraction, optical microscope ( om ), mechanical experiments, it is verified that the main reason causing the main steam pipe breaking down were the material and structural defects

    採用掃描電鏡技術、 x射線衍射技術、金相觀察、機械性能測試等技術手段和失效分析方法，以某火力發電廠己服役12萬余小時的主蒸汽管道為例，對其嚴重的爆斷事故進行了失效分析，確定了管道失效的主要原因是與管道焊接的閥體存在大量的材質缺陷和結構缺陷。
  5. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  6. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  7. With sem, x - ray diffraction analysis, magnetic measurement by magnetic property measurement system, the effects of growth and annealing conditions are analyzed

    超導薄膜，採用磁測量m - t x射線衍射掃描電子顯微鏡技術分析了各種沉積及退火條件對mgb
  8. The measurement results to used the instrument based on the principle of fraunhofer diffraction are exact in the range of above 5 microns, but not of less than 5 microns

    僅利用夫朗和費衍射原理的測粒技術雖然能對5微米以上的顆粒測量給出準確的結果，但對5微米以下的顆粒卻很難實現準確的測量。
  9. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  10. The tio2, cds and cds - tio2 films on the common glass substrate were prepared, respectively, using ti ( oc4h9 ) 4, cd ( cooch3 ) 2 and scn2h4 as raw materials by sol - gel method. the influences of manifold preparing parameters ( such as the concentration of sol, the amount of the peg. the number of coatings, the heat - treated temperature and time ) on the structure and performance were studied

    本文採用溶膠-凝膠技術，以鈦酸丁酯、乙酸鎘和硫脲為原料，以普通玻璃片為載體，制備了納米tio _ 2薄膜、 cds薄膜和cds - tio _ 2復合半導體薄膜，研究了制備過程中多種制備參數（如溶膠的濃度，聚乙二醇（ peg ）的加入量，鍍膜層數，熱處理溫度及時間）對薄膜結構和性能的影響，採用x -射線衍射（ xrd ） 、掃描電鏡（ sem ） 、能譜分析（ edxa ） 、紫外-可見吸收光譜（ uv - vis ）等測試手段對各薄膜進行了結構和物性表徵。
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