表面態 的英文怎麼說

中文拼音 [biǎomiàntài]
表面態 英文
surface source
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  1. Preparation and study of the surface states on nano particle photocatalyst films

    納米薄膜光催化劑的制備與表面態研究
  2. This indicates that rich zn2 + and poor mn2 + ions in the colloidal solution of zns : mn2 + nps is the key to obtain highly efficient luminescence and highly quantum yields. the research on the properties of surface modification may be helpful to the widely application of nano - sized materials in the future

    對納米材料表面修飾后發光性質變化的研究有助於更加深入地認識表面和表面態的實質及其對發光的影響機制，為進一步控制納米材料的表面，提高發光效率，創制理想高效的納米發光材料提供基礎的理論的指導，使得納米發光材料得到更加廣泛的應用。
  3. Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon, for instance quantum confinement effect model, polysilanes model, siloxen and its derivant, surfacial states model and quantum confinement - light center model etc. in addition, study status of ps at present is addressed and applied problems in some fields are analyzed in this section

    多年來，人們對多孔硅發光機理一直進行著堅持不懈的探討和研究，提出了許多種解釋多孔硅層（ psl ）發光的模型，典型的有下列幾種：量子限制模型、硅-氫鍵或多硅烷（ polysilanes ）的發光、硅氧烯及其衍生物的發光、表面態模型和量子限制-發光中心模型。
  4. A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente

    電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。
  5. In each case, we present the surface band structure together with the projected bulk band of both ideal and reconstruction surface respectively, the number of the surface states is determined, and the localized surface features and orbital properties of this surface states along the high symmetry lines in the 2d sbz are discussed

    根據電子數目規則，我們斷定處在一o . lev ~ 0 . lev的表面態為全部填滿的陰離子懸掛鍵態或者為原子再構后引起的as一asdimer鍵態，而處在1 . 4ev一1 . 6ev的表面態為陽離子空的懸掛鍵態。
  6. Some results are interesting, for example, in our calculation, there are no reconstruction in the cleaned pbte > pbse > pbs ( 001 ) surface. but there are different rumple occurs. unlike the iii - v and ii - vi semiconductors, there are no surface states in the fundamental gaps

    在表面電子結構特徵方面，與111一v族和n一vl族化合物不同，基本帶隙中不引入表面態，而在導帶頂和價帶底附近以及更深能級中出現表面態或表面共振態等。
  7. Under pulse condition, charging and discharging of surface states between gate and drain induce gan hemt current collapse

    脈沖條件下， ganhemt電流崩塌效應主要由柵漏之間表面態充放電引起。
  8. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  9. The nanometer effect of the pores, which increased surface area and caused the failure of conglomeration of dbo - ppv polymer, can lead to the 90nm blue shift of the pl peaks of dbo - ppv

    這一結果確認了多孔硅的躍遷過程主要是由量子限制效應決定，復合過程受表面態影響。
  10. In this thesis, three systems, namely, perfect and defect sno _ 2 ( 110 ) surfaces, ti and ru - doped surfaces and the adsorptions of small molecules on above perfect surfaces have been studied in details by using the first - principles method with the combination of pseudopotential plane - wave and atomic basis sets. the structural stability, surface states and the surface chemistry of undoped and metal doped sno _ 2 ( 110 ) surfaces have been discussed, which can provide the theoretical rules to improve the surface properties of this special functional material

    為了深入了解sno _ 2表面的電子結構本質及其化學反應性質，本論文採用贗勢平面波和原子軌道基組相結合的第一性原理方法，詳細考察了三種類型體系，即sno _ 2 （ 110 ）完整和缺陷表面、 ti和ru摻雜表面、以及典型小分子在上述完整表面的吸附，揭示了sno _ 2 （ 110 ）及其金屬摻雜表面的構型穩定性、表面態及其對表面化學反應性的影響，為該類型表面功能材料的改性提供理論依據。
  11. In the paper, the preparation, photoluminescence mechanism and third - order nonlinear of porous silicon are mainly introduced. in the first chapter, a brief history, background, preparation and formation of porous silicon are provided and several effective luminescent models are also introduced as well. then the experiment results showed that the mechanism of the photoluminescence of porous silicon was ascribed to the co - effect of quantum confinement and the surface materials of porous silicon

    第一章介紹了多孔硅的研究背景、研究意義、研究歷史以及制備方法和形成機制，並且介紹了幾種較有影響力的發光機制模型，然後提出我們的觀點：多孔硅的發光機制不能僅用某一種因素去解釋，應該綜合考慮各方面的影響，多孔硅發光是量子限域效應和表面態綜合作用的結果。
  12. The bulk electronic properties of gaas have been described both by the second - neighbour tight - binding formalism for ( 112 ), ( 113 ) ( 114 ) surface and nearest neighbour tight - binding sp3s * for ( 2 5 11 ) surface

    再構后，不考慮表面原子的馳豫變化， gaas （ 2511 ）表面表面態的變化主要表現在o . gev ~ 1 . oev的一些表面態完全消失。
  13. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。
  14. A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built, using steady - state continuity equations and including the effect of surface states

    通過求解一維電流連續性方程和傳輸方程，同時考慮表面態陷阱的作用，建立了gan基msm結構紫外探測器在穩態光照下i - v關系的解析模型。
  15. The calculation result shows that the surface energies of the closest surfaces are the lowest and that the surface energies of the closest surfaces and the closer surfaces are the extremum of the surface energies function of orientation angle

    （ 3 ）對gaas （ 114 ）表面的計算表面表明:不論是a類或者是b類表面，理想情況下表面7條主要的表面態存在。理想截斷的表面表現為金屬特性。
  16. It concluded that self - activated luminescent centers are not distributed randomly but prefer to occupy the surface sites in nanoparticles. 5. by raman spectra, epr spectra and uv irradiation - induced spectra change, the organic function groups of - oh, - ch3 and - coo adsorbed electrically on the surface of nanoparticles were discussed

    Zns射漪屆劣結匆、齡腔與發芳碩里j筍應忿丈君漪扮5藉助raman光譜， epr （電子順磁共振）光譜以及紫外輻照誘導的光譜變化等實驗手段，較深入的研究了納米晶的表面態。
  17. Pinning theory of fermi energy and surface state measurement of znsno3 gas sensitive material

    3氣敏材料表面態測定
  18. We consider that surface state act as quenching centers. with the irradiation, the surface state decreases and therefore luminescence of mn2 + increases. reduction of quenching centers is the result of chemical change by obtaining energy from zns excited by uv light

    熒光增強的原因是由於zns基質向mn2 +離子和表面態的能量傳遞是兩個相互競爭的過程，紫外光輻照下表面猝滅中心數目不斷減少從而mn2 +離子的發光增強。
  19. The model of the photoluminescence of the nanocrystalline silicon can explain the result

    納米硅的表面態發光模型能較好地解釋實驗結果。
  20. Furthermore, we also demonstrate theoretically and experimentally that the surface state in photonic crystals exists indeed

    本論文還對光子晶體表面態進行了理論計算和實驗驗證，證明了表面態的存在。
分享友人
分享到 Line

分享到臉書