表面束縛 的英文怎麼說

中文拼音 [biǎomiànshù]
表面束縛 英文
dissimulated electricity
  • : Ⅰ名詞1 (外面;外表) outside; surface; external 2 (中表親戚) the relationship between the child...
  • : Ⅰ名詞1 (頭的前部; 臉) face 2 (物體的表面) surface; top 3 (外露的一層或正面) outside; the ri...
  • : Ⅰ動詞1 (捆; 系) bind; tie 2 (控制; 約束)control; restrain Ⅱ量詞(用於捆在一起的東西) bundle;...
  • : 動詞(捆綁) bind; tie up
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 束縛 : tie; bind up; fetter; bound; constrain; rigid control; trammel
  1. In superconductors, the bosons are the pairs of bound electrons that form at the fermi surface.

    在超導體中,玻色子是在費密形成的態電子對。
  2. Abstract : the effect of correction of self - consistent potential on electronic structure in simple cubic nanocrystal particles is calculated by means of the green ' s function method in the tight - binding approximation, taking only the nearest neighbor matrix elements into account. the numerical results show that the electronic energy spectrum is shifted, the chemical potential is not equal to the atomic energy level, the electronic density at each lattice point is changed, and the variation of electronic density at surface lattice point is the largest

    文摘:在緊近似下,只計及最近鄰的矩陣元,採用格林函數計算了自洽勢修正對簡立方納米晶體顆粒的電子結構的影響,發現電子能譜發生了移動,化學勢不等於格點原子能級,各格點的電子密度也發生了變化,其中以格點的電子密度變化最大。
  3. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ,激子能為60mev ,具備了室溫下發射紫外光的必要條件,在紫外探測器、 led 、 ld等領域有著巨大的發展潛力; zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、聲波器件、氣敏元件等諸多領域得到廣泛應用。
  4. Her features were handsome; but their natural play was so locked up, that it seemed impossible to guess at their genuine expression.

    她的五官是端正的;但是部的自然活動受到那般的壓抑和,因此看起來似乎無法猜測它真正的情。
  5. We have developed the theory of boundary shielding approximation of electric polarization, from which the values of spontaneous polarization of some typical ferroelectric materials can be derived. the shielded charges in ferroelectricity are in the state of surface bound polaron - dipole whose creation and annihilation must span a potential barrier. by introducing statistical method, four types of typical electric hysteresis loops of some common crystals and ceramics have been given, which are well consistent with the experimental results

    利用電極化的邊界屏蔽近似,可計算出一些典型鐵電單晶的自發極化強度.鐵電屏蔽電荷處于表面束縛極化子偶狀態,其產生和湮沒要跨越位壘.由統計方法給出的一些常見晶體和陶瓷的四種典型電滯回線形狀,和實驗觀察到的結果一致
  6. Imev and the data in which the energy respectively is 166mev 139mev, 104mev, 90mev. on the basis of two wave functions and two optical potentials above mentioned, we have investigated a serie s of knockout reactions : through the comparing of two wave functions and two optical potentials, we find that two a cluster relative vave functions which contribute to the energy sharing results of the reaction sections are very well, especially for the ; that the received spectroscopic factors used vfm ( r ) are better than that used ; that the former not only suits to the elastic scatterings but also to the knockout reactions ; that the a cluster of knockout reactions are its local behaviors of surface. and we further testify that the distorted influences are not neglected if the incidence energies are not very high, but can be used the plane wave impulse approximate method and neglect the effects of the distorted influences if the incident energies are high enough

    在利用上述的兩種態波函數和兩種光學勢的基礎上,我們研究了一系列的敲出反應:通過對比兩種態波函數和光學勢,我們得到的結論是:兩種態波函數和光學勢對反應截的能量分配譜的貢獻都比較好,但尤以波函數_ ( li ) ( r )為佳;光學勢v _ ( clu ) + ( r )得到的光譜因子比用woods - saxon勢v _ ( ws ) ( r )的結果要好,它不僅能適用於彈性散射,且對敲出反應也能得出比較好的結果;集團的敲出反應是集團局域性的現:在中低能的入射條件下,扭曲效應不能忽略,但入射能量較高時,扭曲效應影響較小,可以用平波沖量近似的方法。
  7. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果明,晶內he原子擇優佔位區是空位,而在整個晶體范圍,最有利於容納he原子的區域是晶界,位錯容納he原子的能力次於晶界和空位;在fcc -鋁的間隙位中, he原子優先充填四體間隙位;晶內間隙he原子是可動的,通過間隙he原子的運動,可在晶內聚集,或被空位、晶界、位錯等缺陷
  8. Comparing our results with that of predecessors, we find that ( i ) there indeed exists a parameter ( impurity bohr radius ajm ) on which the impurity binding energy has strong dependence ; ( ii ) the virial theorem value is non - constant but approach 2 from above when the well width is smaller or larger

    計算結果明:的確存在一個參數(雜質有效玻爾半徑)可用來完全確定能的值,而不必考慮截的形狀和尺寸;體系的維里定理值並不等於常數,而是隨雜質有效玻爾半徑的變化而變化,在阱寬較小和較大時,維里定理值都趨于同一值2 。
  9. When piezoelectric material is put on outside force, it will cause the translocation of positive and negative electricity inside piezoelectric material. then piezoelectric material will generate polarization and shape tied electricity on the surface of the piezoelectric material that is proportional to the outside force

    對壓電材料施加外力時,會引起壓電材料內部的正、負電荷發生位移,並產生極化,從而在壓電材料的形成與外力成比例的電荷,稱為正壓電效應。
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