表面退火 的英文怎麼說

中文拼音 [biǎomiàntuìhuǒ]
表面退火 英文
flash annealing
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 退火 : [冶金學] anneal; annealing; back-out
  1. ( 3 ) the analysis results of xrd, sem indicated that the ni - pd coating formed a fcc structure. after annealing at 200 ?, a little amount of pdsi was precipitated in the coating. the surface image of ni - pd coating was utricle

    （ 3 ）利用xrd 、 sem 、 aes等手段對ni - pd合金鍍層的結構、表面形貌、成分進行了分析，結果表明ni - pd合金鍍層形成了面心立方的固溶體結構，鍍層經過200快速退火后，有少量pd的硅化物（ pdsi ）析出。
  2. Abstract : in this paper, pesent the development and trends in chemi cal component controlling, hot rolling and coiling processing, ferritic hot rollin g, trip steel processing, cool rolling, annealing and surface quality controlling f or deep drawing sgeet steels are analyzed and discussed

    文摘:分析討論了目前國內外在深沖用薄板生產中的成分控制、熱軋、捲曲工藝、鐵素體區軋制、 trip鋼生產、冷軋與退火工藝以及鋼板表面質量控制方面的新進展和趨勢
  3. In acid copper sulphate solution, the nc copper has a more negative corrosion potential which is decreasing with reducing the grain size and diffusion impedance was only found in the as - prepared and as - annealed at 180 ? nc copper due to the diffusion within the pores and channels on the surface. both the tafel plots and eis study demonstrated that the nc copper exhibits a higher corrosion current and lower polarization resistance than its mc couterpart

    在酸性硫酸銅溶液中，納米晶銅的腐蝕電位比微米晶銅要負，並且隨著晶粒尺寸的減小而降低。 eis研究表明，未退火的和180退火的納米樣品中發現了擴散阻抗，與表面孔洞和通道中的擴散有關。極化曲線外推法和電化學阻抗研究都表明納米晶銅的腐蝕電流比微米晶銅高，而極化電阻要低。
  4. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  5. Abstract : with pc - controlled liquid drop counter, protective atmospher es of ball annealing of wires is strictly kept. pickling is easily gained in proc ess of ball annealing of wires and quality wires are produced

    文摘:採用電腦液體滴速計數儀，嚴格控制針布齒條用規格鋼絲球化退火的保護氣氛，防止和消滅針布齒條在球化退火過程中出現的表面不易酸洗現象，提高了鋼絲的表面質量。
  6. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  7. Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1

    結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。
  8. Cold rolled, bright annealed and skin - passed, the product has excellent brightness and good reflexivi ty like mirror, used for lectrical appliances, mirror, kitch en apparatus, ornament materials etc

    經冷軋后施以光亮退火，並經過平整得到的產品。表面光澤度極好，有很高的反射率。如同鏡面的表面。用於家電產品、鏡子、廚房設備、裝飾材料等。
  9. It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate

    模擬結果表明：退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態所佔比例的不同影響器件的恢復率。
  10. Sf - gp - cyp - iii mainly used for surface quenching, welding, metal powder sintering tube seam annealing and metal parts heat penetrating

    主要用於鋼鐵機械零件的表面淬火釬焊粉末金屬的燒結，鋼管焊縫的退火，以及金屬部件的透熱等。
  11. By using the air temperature measured by thermocouples and the glass temperature measured by infrared thermometer as the training sample, a model for prediction of the temperature parameters for the float glass in lehr was created based on the ameliorated bp neural network

    摘要利用熱電偶測得的退火窯中空氣溫度和紅外測溫儀測得的玻璃表面溫度作為訓練樣本，建立了基於bp神經網路的玻璃溫度預測模型。
  12. The buried layers moves towards sample surface, forming surface layers. the implantation - damaged zone also moves towards the surface and is recovered gradually. the fe - implanted films were implanted, or doped, with small amount of carbon for improving the film quality

    另外隨退火溫度變化的還有注入損傷層，隨退火溫度的升高注入損傷逐漸恢復，損傷層厚度逐漸減小，到850的時候硅化物層斷裂，損傷層則上升到樣品表面。
  13. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  14. The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely

    （ 2 ）常溫下制備的tio _ 2薄膜是無定型的， 300濺射薄膜表面有緻密的晶粒，熱處理溫度升高，晶粒變大，晶相開始轉化， 800退火tio _ 2完全轉化為金紅石結構。
  15. Production test of the production line is showed that anneal furnace combustion system with regenerative radiant - tube combustor compare with conventional radiant tube burner not only have superiorities on saving energy and environmental protection but also have advantages on temperature distribution and temperature control properties

    生產線試生產的情況表明，退火爐燃燒系統使用蓄熱式輻射管燃燒器比使用常規輻射管燃燒器不僅在節能、環保方面具有優勢，而且在加熱均勻性和爐溫控制方面也有一定優越性。
  16. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  17. Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities

    通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。
  18. At last, we observed the surface morphology and magnetism of the samples by atomic force microscopy ( afm ) and magnetic force microscopy ( mfm ), the formation of mnga and mnas magnetic precipitates was discovered and the precipitates were affected by the conditions of implantation and annealing

    最後，通過原子力顯微鏡（ afm ）和磁力顯微鏡（ mfm ）觀察了樣品的表面形貌和磁特性，發現了退火樣品中形成了磁性第二相mnga或mnas粒子，並且這些磁性粒子的磁特性與注入條件和退火條件有關。
  19. The results showed that the microstructure of as - deposited tbdyfe ii 1ms were amorphous and the crystal of tbfe2 were found in films after annealing at 500. annealing films in vaccum could improve the saturation magnetization ms and the susceptibility, decrease the coercivity and the saturaion field, and make the direction of the magnetic moments parallel to the film plane

    結果表明，制備態薄膜為非晶態結構，經過500真空退火熱處理后，薄膜出現了tbfe _ 2的結晶物，薄膜的矯頑力和外場的飽和磁場大大降低，飽和磁化強度增強，初始磁化率提高，易磁化軸轉向膜面。
  20. Standard test method for non - destructive photoelastic measurement of edge and surface stresses in annealed, heat - strengthened, and fully tempered flat glass

    在退火淬火和全回火平面玻璃中邊緣和表面應力的無損光彈性測量的標準試驗方法
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