襯底層 的英文怎麼說

中文拼音 [chèndecéng]
襯底層 英文
substrate layer
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  1. The light travels in a composite medium made up of the film, the substrate and the cladding.

    光在由薄膜，襯底和覆蓋層組成的混合介質中傳輸。
  2. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  3. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。
  4. A planar film of refractive index nf is sandwiched between a substrate and a cover material.

    折射率為nf的平面薄膜夾在感光襯底和覆蓋層之間。
  5. Increase of oxidation temperature transforms more silicide, which was formed during deposition of hf, to silicate

    ，成為介於hfo 。薄膜和出襯底之間的界面層。
  6. Using a strained si layer as a channel in cmosfet may increase the mobility of carriers and thus enhance the device ’ s performance considerably such as transconductance and cutoff frequency

    在sige虛擬襯底上生長應變si層做器件溝道，將大大增加載流子的遷移率，從而提高器件的跨導和其他性能。
  7. Continuity verification of liquid or sheet linings applied to concrete substrates

    對混凝土底層使用的液體或薄板襯墊的連續驗正
  8. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  9. The microtube zno econtrollable growth on the glass substrate, which was previously deposited, of zno hollow spheres was researched. the results showed that zno hollow spheres acted as crystal nucleus of zno microtubes. by this method regular zno microtubes were synthesised. the growth of microtubes can be controlled by change the size of zno hollow spheres

    結果發現zno中空球層對zno微米管的生長起到了晶核的作用，能夠在玻璃襯底上形成形貌規則的zno微米管;改變zno中空球的粒徑能夠改變所形成的zno微米管的尺寸，從而實現了對zno微米管的可控生長。
  10. Coatings for fire protection of building elements - code of practice for the use of intumescent coating systems to metallic substrates for providing fire resistance

    建築構件的防火塗層.防火用金屬襯底膨脹塗層使用實用規程
  11. Znf16pc molecules grow on quartz substrate in a stransky - krastanov model ; a fundamental layer is laid by strong interactions between quartz and f - atoms on znf16pc, on which an amorphous transition layer develops, finally an well ordered film is obtained, " card - packing ", " amorphous accumulation " and " brick - stacking " are adopted hi three different layers

    Znf _ （ 16 ） pc分子在石英襯底上的生長基本符合stransky - krastanov模型：通過f -原子與石英襯底的強相互作用形成奠基層，發展成無定型的過渡層，最後形成有序的結晶層。在這三個區域內分子分別採取「 card - packing 」 、 「 amorphousaccumulation 」和「 brick - stacking 」排列方式。
  12. The techniques of preparing film buffer layers on si were studied. the sem, tem and xrd were adopted to study the crystal structure of films. the influences of buffer layers, substrate and heat treatment condition on the crystal structure and performance of the ybco films were discussed

    進一步用掃描電鏡、透射電鏡和x射線衍射儀研究了薄膜組織結構和結晶情況，分析了緩沖層和襯底對ybco薄膜制備的影響、以及不同熱處理條件對薄膜結晶結構及性能的影響。
  13. "pattern transfer" refers to the transfer of a pattern, defined by a masking layer, into a film or substrate by chemical or physical methods that produce surface relief.

    「圖形轉移」是指把掩膜層所確定的圖形通過能產生表面轉移的化學或物理方法轉移到薄膜上或襯底上去。
  14. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  15. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  16. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  17. For the first time, we reported the barrier height of au / algan is 1. 08ev by analysis on various i - v curves under corresponding temperatures. 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation

    3 、採用金屬鎵層氮化技術，利用我們自行改造的熱蒸發設備和氨氣氮化設備，在無定形石英襯底上生長出具有擇優取向的多晶gan ，取得了一些階段性的成果。
  18. The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide

    通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
  19. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  20. Silicon / silicon oxide nanofilms and multilayer films were prepared by vacuum evaporation process followed by natural oxidation

    摘要用真空蒸發技術和自然氧化法在玻璃襯底上制備納米級的硅氧化硅薄膜和多層膜。
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