襯底結 的英文怎麼說
中文拼音 [chèndejiē]
襯底結
英文
substrate junction-
Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。Adopting ni / si and tin / ni / si structure, the nisi film on the < 100 > si substrate by the means of rta has been demonstrated in detail
文中詳細的闡述了採用ni si和tin ni si結構通過rta在硅單晶< 100 >襯底上制備nisi薄膜的方法。It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic
結果表明，對于ito薄膜，薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系， ito薄膜的sem表明，樣品表面較平整，且晶粒也比較緻密。Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。The results of design explain that if sio2 films deposited on the surfaces of sapphire the average transmittance in 3 ~ 5 m waveband can exceed 97 %, which can meet the requirements of missile dome in infrared application
設計結果表明，藍寶石襯底雙面鍍sio _ 2 、 sio _ 2 / si等膜系，在3 5 m波段的平均透過率大於97 ，可滿足導彈頭罩設計和使用的要求。The results reveal that the single - crystal silicon carbide films with smooth and continuous apperance are obtained under the reported experimental conditions
結果表明，在藍寶石復合襯底上可以生長出均勻連續的sic單晶薄膜。Specification for insulating materials based on mica - specifications for individual materials - glass - backed mica paper with a b - stage epoxy resin binder
雲母基絕緣材料規范.第3部分:單項材料規范.第6節:用b級環氧樹脂粘合劑粘結的玻璃纖維織物襯底雲母紙Specification for insulating materials based on mica - specifications for individual materials - polyester film - backed mica paper with a b - stage epoxy resin binder
雲母基絕緣材料規范.第3部分:單項材料規范.第4節:用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙Specification for insulating materials based on mica ; part 3 : specifications for individual materials ; sheet 6 : glass - backed mica paper with a b - stage epoxy resin binder
雲母基絕緣材料規范.第3部分:單項材料規范.第6活頁:用b級環氧樹脂粘合劑粘結的玻璃纖維織物襯底雲母紙Specification for insulating materials based on mica. part 3 : specifications for individual materials. sheet 6 : glass - backed mica paper with a b - stage epoxy resin binder
雲母基絕緣材料規范.第3部分:專用材料規范.活頁6 :用b級環氧樹脂粘合劑粘結的玻璃纖維織物襯底雲母紙Specification for insulating materials based on mica ; part 3 : specifications for individual materials ; sheet 4 : polyester film - backed mica paper with a b - stage epoxy resin binder
雲母基絕緣材料規范.第3部分:單項材料規范.第4活頁:用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙Specification for insulating materials based on mica. part 3 : specifications for individual materials. sheet 4 : polyester film - backed mica paper with a b - stage epoxy resin binder
雲母基絕緣材料規范.第3部分:專用材料規范.活頁4 :用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or
此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。With the development of fiber - optic communication systems and fiber - optic sensors, the linbo _ 3 integrated optical intensity modulators consisting of m - z optical waveguide and cpw modulation electrode structure get an extensively application
隨著光纖通信與光纖傳感的發展，以linbo _ 3為襯底材料、以m - z干涉儀為光波導結構、採用共面行波電極（ cpw ）為調制電極的集成光學強度調制器得到了越來越廣泛的應用。We studied the resurf, trench - gate, 3d - resurf ldmos. we designed the power switch ic based on epitaxial simox substrate, satisfying the requirements of the user. this ic can sustain 60 ~ 80v shutdown voltage overshot
在此基礎上，本文設計了性能滿足用戶要求的，基於esoi襯底結構的功率開關集成電路，該集成電路可承受60 ~ 80v的反向過沖電壓，並具有過流，過壓等保護電路。Integrated " inductors on silicon are designed and fabricated. s parameters of the inductors based equivalent circuit are investigated and the inductor parameters are calculated from the measured data
設計了實驗來驗證這一思想，成功制備了帶襯底結隔離的平面螺旋型電感，並測試和提取了其參數。The pixel size of p + / n - well / p - sub structure is 100 umx 100 n m, fill factor is 77. 6 %. it can obtain target information with illuminance intensity in the range of 0. 011x ~ 98, 0001x, and the sensor photoelectric sensitivity is 35v / lx ? s. when the method of changeable reset frequency double scanning is used, the photoelectric dynamic range can be 139. 8db, which is high in the 0. 6 um level cmos image sensors already reported
在對感光單元進行器件物理結構優化的研究中，通過採用深結深光電管結構，提高了傳感器的感光響應，其中p m階」襯底結構的傳感器面積為100umx100urn ，感光面積百分比為77石，可對0刀98 ， 000lx照度的目標信號進行傳感，感光靈敏度大於3sv ix ? s ，採用了變頻兩次掃描后，動態范圍可達139We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3
本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。In order to prepare high quality films, appropriate temperature and r. f. power should be selected, and moreover, the content of the hydrogen need be controlled
因此制備薄膜與襯底結合良好、較高質量的氮化硼薄膜，應在適當的沉積溫度（ 420 ）和射頻功率（ 160w ）下並適當控制反應氣體中氫氣的含量。分享友人