襯底膜 的英文怎麼說

中文拼音 [chèndemó]
襯底膜 英文
substrate film
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  1. Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target

    本文研究用脈沖激光燒蝕石墨靶方法在單晶硅、 k9玻璃等襯底上生長超硬非晶碳膜。
  2. 2 we studied the films with raman polarization spectrum. the peak intensity in the polarization spectrum of the films with basal plane not oriented on the substrate changes with the polarization condition

    張生僅北京工業大學博士學位論文摘要2利用raman偏振光譜研究了薄膜的性質，對基面非平行襯底的取向， raman譜隨偏振條件的不同而變化。
  3. C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate

    C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。
  4. The light travels in a composite medium made up of the film, the substrate and the cladding.

    光在由薄膜，襯底和覆蓋層組成的混合介質中傳輸。
  5. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  6. Depositing bi4ti3o12 ferroelectric thin films on ito glass substrate

    玻璃襯底上制備鈦酸鉍鐵電薄膜
  7. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  8. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  9. Adopting ni / si and tin / ni / si structure, the nisi film on the < 100 > si substrate by the means of rta has been demonstrated in detail

    文中詳細的闡述了採用ni si和tin ni si結構通過rta在硅單晶< 100 >襯底上制備nisi薄膜的方法。
  10. It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic

    結果表明，對于ito薄膜，薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系， ito薄膜的sem表明，樣品表面較平整，且晶粒也比較緻密。
  11. A planar film of refractive index nf is sandwiched between a substrate and a cover material.

    折射率為nf的平面薄膜夾在感光襯底和覆蓋層之間。
  12. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  13. Increase of oxidation temperature transforms more silicide, which was formed during deposition of hf, to silicate

    ，成為介於hfo 。薄膜和出襯底之間的界面層。
  14. The results of design explain that if sio2 films deposited on the surfaces of sapphire the average transmittance in 3 ~ 5 m waveband can exceed 97 %, which can meet the requirements of missile dome in infrared application

    設計結果表明，藍寶石襯底雙面鍍sio _ 2 、 sio _ 2 / si等膜系，在3 5 m波段的平均透過率大於97 ，可滿足導彈頭罩設計和使用的要求。
  15. By adjusting parameters, the films with ( 111 ) preferential growth have been successfully obtained at a low temperature

    通過控制參數，在較低的襯底溫度下成功獲得出（ 111 ）擇優取向的納米薄膜。
  16. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  17. The results reveal that the single - crystal silicon carbide films with smooth and continuous apperance are obtained under the reported experimental conditions

    結果表明，在藍寶石復合襯底上可以生長出均勻連續的sic單晶薄膜。
  18. Specification for insulating materials based on mica - specifications for individual materials - polyester film - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:單項材料規范.第4節:用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙
  19. Specification for insulating materials based on mica ; part 3 : specifications for individual materials ; sheet 4 : polyester film - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:單項材料規范.第4活頁:用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙
  20. Specification for insulating materials based on mica. part 3 : specifications for individual materials. sheet 4 : polyester film - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:專用材料規范.活頁4 :用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙
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