襯底 的英文怎麼說

中文拼音 [chènde]
襯底 英文
underlayment; substrate; substratum; supporting base
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  1. Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target

    本文研究用脈沖激光燒蝕石墨靶方法在單晶硅、 k9玻璃等襯底上生長超硬非晶碳膜。
  2. As he struck the wall, pieces of stucco similar to that used in the ground work of arabesques broke off, and fell to the ground in flakes, exposing a large white stone

    洞壁上掉下來一塊象阿拉伯式雕刻襯底用的那種塗料，跌在地上碎成了片片，露出了一塊白色的大石塊來。
  3. Large amount of hydrogen was disadvantage to the basal plane orientation, but it is helpful for the c axis paralleling to the substrate

    大量h的存在不利於基面平行襯底的取向的發生，但能夠滿足c軸平行襯底的條件（在一定偏壓下） 。
  4. On the other hand, certain amount of ar is benefit for the basal plane orientation, which is similar to what observed in mwecr cvd ~ & bn ~ i, the deposition of al

    一定量的ar有利於產生基面平行襯底的取向，這與其他沉積al的實驗一致。氣體對取向的影響可能與物理轟擊作用和相變時的過飽和度均有關系。
  5. 2 we studied the films with raman polarization spectrum. the peak intensity in the polarization spectrum of the films with basal plane not oriented on the substrate changes with the polarization condition

    張生僅北京工業大學博士學位論文摘要2利用raman偏振光譜研究了薄膜的性質，對基面非平行襯底的取向， raman譜隨偏振條件的不同而變化。
  6. E ) with the help of pecvd, we found that high substrate temperature is advantage to the basal plane orientation. higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly

    E ）高溫有利於基面平行於襯底的取向，在高的生長溫度下吸附於襯底表面的沉積粒子能夠迅速遷移到二維核的位置，並使粒子有足夠能量調整位置。
  7. C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate

    C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。
  8. Woven glass fabric as inlay bituminous sheeting

    作瀝青路襯底的機織玻璃纖維織物
  9. A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in fig. 32.

    消除這個問題的一個方法是把器件製造在絕緣襯底的硅島上，如圖32所示。
  10. The light travels in a composite medium made up of the film, the substrate and the cladding.

    光在由薄膜，襯底和覆蓋層組成的混合介質中傳輸。
  11. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  12. Paints and varnishes - determination of resistance to filiform corrosion - aluminium substrates

    色漆和清漆.耐絲狀腐蝕的測定.鋁襯底
  13. Different nitridation programs have produced straight and smooth gan nanowires and herringbone gan nanowires on quartz substrates, respectively

    我們通過改變氮化程序，分別在石英襯底上合成了平直的gan納米線和魚骨形gan納米線。
  14. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。
  15. Depositing bi4ti3o12 ferroelectric thin films on ito glass substrate

    玻璃襯底上制備鈦酸鉍鐵電薄膜
  16. Can it be lasing on ito just as on glass ? our experimental answer was positive

    能否象在玻璃襯底上一樣，在ito上也能實現波導式激光，實驗給出肯定回答。
  17. Resilient floor coverings - specification for plain and decorative linoleum on a corkment backing

    彈性地板覆蓋物.軟木襯底上普通和裝飾油氈規范
  18. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  19. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  20. Adopting ni / si and tin / ni / si structure, the nisi film on the < 100 > si substrate by the means of rta has been demonstrated in detail

    文中詳細的闡述了採用ni si和tin ni si結構通過rta在硅單晶< 100 >襯底上制備nisi薄膜的方法。
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