詳細規范 的英文怎麼說

中文拼音 [xiángguīfàn]
詳細規范 英文
detail specification
  • : Ⅰ形容詞(詳細) detailed; minute Ⅱ名詞(詳細情況) details; particulars Ⅲ動詞1 (說明; 細說) tel...
  • : 形容詞1 (條狀物橫剖面小) thin; slender 2 (顆粒小) in small particles; fine 3 (音量小) thin ...
  • : Ⅰ名詞1 (畫圓形的工具) instrument for drawing circles 2 (規則; 成例) rule; regulation 3 [機械...
  • : 名詞1 [書面語] (模子) pattern; mould; matrix 2 (模範; 榜樣) model; example 3 (范圍) boundar...
  • 詳細 : detailed; minute; circumstantial; explicit
  1. Blank detail specification. fixed fibre optic attenuators

    空白詳細規范.固定光纖衰減器
  2. Bcd detail specification for electronic component. semiconductor integrated circuit. type ch2019 4 - line to 10 - line decoder with bcd - in

    電子元器件詳細規范.半導體集成電路ch2019型4線- 10線譯碼器
  3. Detail specification for travelling wave tube of type bm - 1948

    Bm - 1948型行波管詳細規范
  4. Blank detail specification : camera tubes ; german version en 113001 : 1991

    空白詳細規范.電視攝象管
  5. Blank detail specification for camera tubes

    攝象管空白詳細規范
  6. Detail specifications for silicon coaxial mixer diodes

    硅同軸混合二極體詳細規范
  7. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dk enclosure, 6. 0 to 25 mhz frequency range - fundamental thickness - shear mode, at - cut, for operation over wide temperature ranges non - temperature controlled - full assessment level

    振蕩器用冷焊密封石英晶體振子詳細規范. dp外殼6 . 0至25mhz頻率圍.寬溫
  8. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 17 to 75 mhz frequency range - third overtone thickness - shear mode, at - cut, for operation over narrow temperature ranges temperature controlled - full assessment level

    振蕩器用冷焊密封石英晶體振子詳細規范. dn dq和dp外殼17至75mhz頻率圍.窄溫
  9. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 50 to 125 mhz frequency range - fifth overtone thickness - shear mode, at - cut, for operation over wide temperature ranges non - temperature controlled - full assessment level

    振蕩器用冷焊密封石英晶體振子詳細規范. dn dq和dp外殼50至125mhz頻率.寬溫
  10. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 50 to 125 mhz frequency range - fifth overtone thickness - shear mode, at - cut, for operation over narrow temperature ranges temperature controlled - full assessment level

    經質量評定的振蕩器用冷焊封石英晶體振子詳細規范. dn dq和dp外殼, 50至125mhz頻率.窄溫
  11. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, 47 u 2, dq and dp enclosures, 17 to 75 mhz frequency range - third overtone thickness - shear mode, at - cut, for operation over wide temperature ranges non - temperature controlled - full assessment level

    振蕩器用冷焊密封石英晶體振子詳細規范. dn 47u 2 dq和dp外殼17至75mhz頻率圍.寬溫
  12. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 0. 8 to 20 mhz and 3. 0 to 30 mhz frequency ranges - fundamental thickness - shear mode, at - cut, for operation over narrow temperature ranges temperature controlled - full assessment level

    振蕩器用冷焊密封石英晶體振子詳細規范. dn dq和dp外殼0 . 8至20mhz和3 . 0到30mhz頻率圍.窄溫
  13. Detail specifications for high accuracy horizon - meter for type cw - 14

    Cw - 14型高精度水平儀詳細規范
  14. Blank detail specification - fixed multilayer ceramic surface mounting capacitors - assessment level dz

    空白詳細規范.多層陶瓷表面鑲嵌固定電容器.評定等級dz
  15. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  16. Semiconductor discrete device. detail specification for semiconductor opto - couplers for type gh21, gh22 and gh23 of gp, gt and gct classes

    半導體分立器件. gp gt和gct級gh21 gh22和gh23型半導體光耦合器詳細規范
  17. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  18. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  19. Detail specification for germanium coaxial mixer diodes

    鍺同軸混頻器二極體詳細規范
  20. Harmonized detail specification for fixed tantalum capacitors - porous anode, solid electrolyte - cylindrical insulated non - insulated metallic case, polar hermetic seal, axial terminations - basic plus additional assessment level

    固定式鉭電容器詳細規范.多孔陽極固態電解質.圓形絕緣非絕緣金屬外殼極性密封軸向終端.基本附加評定級
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