負微分電導 的英文怎麼說

中文拼音 [fùwéifēndiàndǎo]
負微分電導 英文
negative differential conductivity
  • 負 : Ⅰ名詞1 （負擔） burden; load 2 （虧損） loss 3 （失敗） defeat Ⅱ動詞1 [書面語] （背） carry on th...
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  1. Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations

    超晶格的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩，振蕩產生的條件依賴于其結構參數，摻雜濃度和外加偏壓的大小。
  2. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  3. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  4. A simple and easy operating criterion is put forward in accordance with the relation between positive - sequence component and negative - sequence component of stator current when the motor is in unbalance and single phase broken. based on analyzing the traditional inverse time - lag overloading protection of motors, an inverse time - lag operating equation with accumulating stator current is achieved, according to the differential equation of the heating and cooling while the current flows into the conductor

    在分析電動機傳統的反時限過負荷保護的基礎上，根據導體中流過電流時的發熱、散熱微分方程得到了累加定子電流的反時限過負荷保護動作方程，經簡化后得到累加定子電流的實用的反時限特性遞推公式。
  5. However, when the applied bias voltage is located within negative slope regions of u - i curve, the superlattice will undergo a very fast dynamic process, changing from one stable state to another stable state. the superlattice exhibits temporal current oscillations in the negative differential conductivity region at fixed d. c

    當外加電壓使電流處于正微分電導區變動時，超晶格的高低電場疇之間的疇邊界不發生移動，只是相應的電場強度作些調整；當外加電壓使電流處于負阻區域時，超晶格將經歷一個穩態到另外一個穩態的動力學轉變。
  6. The natures of the probe and formation mechanisms in these techniques are different ; therefore, the images of spm can reflect different properties of sample surface. in this work, related properties of ferroelectric thin film were investigated as followed : the main factors determining the image formation of piezoresponse force microscopy ( pfm ) and scanning nonlinear dielectric microscopy ( sndm ) were studied. to avoid the misreading of the same conductive tip with different state, a new method of polarization distribution mapping with nonconductive tip was proposed, and the result of experiment demonstrated that the polarization distribution of ferroelectric thin films could be characterized well by the new approach

    本工作主要分為以下幾個部分:從研究鐵電薄膜的壓電響應力顯微鏡（ pfm ）和掃描非線性介電顯微鏡（ sndm ）成像的影響因素入手，討論了針尖對成像質量的影響;為降低實驗成本、減小導電探針針尖狀態變化對鐵電薄膜微區電性能測試的負面影響，提出了以非導電探針檢測微區極性分佈的方法，並在現有spa - 300hv型spm的實驗平臺上以pfm模式成功實現了新方法對鐵電薄膜極性分佈的表徵。
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