負結晶作用 的英文怎麼說

中文拼音 [fùjiējīngzuòyòng]
負結晶作用 英文
negative crystallization
  • 負 : Ⅰ名詞1 （負擔） burden; load 2 （虧損） loss 3 （失敗） defeat Ⅱ動詞1 [書面語] （背） carry on th...
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 用 : Ⅰ動詞1 （使用） use; employ; apply 2 （多用於否定: 需要） need 3 （敬辭: 吃; 喝） eat; drink Ⅱ名...
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. As a comparison, ba1. 03ce0. 8gd0. 2o3 - was synthesized by sol - gel method. among these samples, nonstoichiometric samples were synthesized for the first time. the research work involved : the crystal phase of the sinters were determined by xrd ; ionic conduction under different experimental atmospheres was measured by gas concentration cells ; performances of hydrogen - air fuel cells with the sinters as electrolytes and porous pt as electrodes were measured

    用粉末x射線衍射儀鑒定它們的結晶相；在（ 600 1000 ）范圍內，以燒結體作為電解質隔膜，多孔性pt黑為正、負電極， pt - rh合金網為集電極，分別組成氫濃差電池、氧濃差電池及氫?空氣燃料電池並測定了它們的性能，研究了不同氣氛下樣品的離子導電特性及影響燃料電池性能的因素。
  2. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
  3. For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias

    為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。
  4. With the use of new mcu p87c591, as the techiniques of serial communication and negative display of lcd, the dashboard has a very beautiful apearence and the system is simplified. not only the analogy signal and the pulse signal can be sampled into the instrument, but also the datum on the can - bus should be transferred into the system whit the connection to the in - vechile network. under the guindance of the idea of " informatic design ", the digital lcd dashboard system is developed, and the professional manufacturer of lcd display device is directed to develop and to design the special lcd module, by which the new lcd production is greatly optimized. all these intentions bing about a very well goal

    在研製數字液晶儀表過程中，應用了新型單片機p87c591 、串口驅動技術和負顯技術，使該數字液晶組合儀表結構簡單，視覺美觀，既可以通過模擬通道、數字通道測量車輛傳感器的信號，又具備接入車輛總線、從can總線上獲得相關數據的能力。在項目開發過程中，運用「信息化設計」的觀點開展液晶顯示模塊的開發和設計工作；並根據軟體工程的原則，優化了液晶模塊的電路設計，使該項產品的開發取得了好的效果。
  5. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  6. According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier

    同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓，同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。
  7. On - line monitoring of hvcb is the precondition of predicting maintenance, is the key element of reliable run, and is the important supplement to the traditional off - line preventive maintenance in fact, the faults are made by hvcb, no matter in number or in times, is over 60 % of total faults so it has determinative importance for improving the reliability of power supply and this can greatly decrease the capital waste used by - dating overhaul in this paper, the inspecting way of hvcb mechanism characteristic is discussed the concept of sub - circuit protector is presented, the scheme that we offered has been combined with sub - circuit integrality monitoring theory, to ensure that it has the two functions as a whole according the shut - off times at rated short circuit given by hvcb manufacturer, the electricity longevity loss can be calculated in each operation, and the remained longevity can be forecast too an indirect way for calculating main touch ' s temperature by using breaker shell temperature, air circumference temperature and breaker ' s heat resistance is improved in this paper, and main touch resistance can be calculated if providing the load current msp430, a new single chip microcomputer made by ti company, is engaged to develop the hardware system of the on - line monitoring device, and special problem brought by the lower supply voltage range of this chip is considered fully

    高壓斷路器所造成的事故無論是在次數，還是在事故所造成的停電時間上都占據總量60以上。因此，及時了解斷路器的工作狀態對提高供電可靠性有決定性意義；並可以大大減少盲目定期檢修帶來的資金浪費。本文論述了斷路器機械特性參數監測方法；提出了二次迴路保護器的概念，並將跳、合閘線圈完整性監視和二次迴路保護結合起來，給出具有完整性監視功能的二次迴路保護器實現方案；根據斷路器生產廠家提供的斷路器額定短路電流分斷次數，計算每次分閘對應的觸頭電壽命損耗，預測觸頭電壽命；提出根據斷路器殼體溫度和斷路器周圍空氣溫度結合斷路器熱阻來計算斷路器主觸頭穩態溫升的方法，並根據此時的負荷電流間接計算主觸頭迴路的電阻；在硬體電路設計上，採用美國ti公司最新推出的一種功能強大的單片機msp430 ，並充分考慮該晶元的適用電壓范圍給設計帶來的特殊問題；在通信模塊的設計中，解決了不同工作電壓晶元之間的介面問題，並給出了直接聯接的接線方案。
  8. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  9. It is used for the pressure and negative pressure of gas or liquid that won ' t corrode steel and copper alloys, nor explode, nor crystallize, nor precipitate

    用於測量對鋼和銅合金不起腐蝕作用無爆炸性，不結晶、不沉澱的氣體或液體的壓力和負壓。
  10. After the analysis of power produce character of the typical three - phases unbalance load, the corresponding circuit is adopted. this main circuit is composed of the power filter series and tcr control circuit. secondly the theory of band - pass filter is analyzed in detail, and then a method of implementing butterworth band - pass filter is put forward

    簡要分析了無功補償的基本原理和工作特點，通過對典型的三相不平衡負載工作特點的分析，主電路採用電力濾波器與晶閘管控制電抗器相接合的結構；對用於無功檢測的帶通濾波器進行了分析，設計了用於負載電壓、電流信號濾波的帶通濾波器，並採用運算放大器加以實現。
  11. In conclusion, the work in the present thesis is devoted to developing new numerical methods, designing new structures with large absolute bandgap and studying the negative refraction for photonic crystals. much progress has been obtained in each of the above - mentioned aspects

    總之，本論文工作涉及光子晶體新理論演算法、光子晶體新結構的設計以及光子晶體在負折射方面的嶄新應用，在各個方面都取得了有特色的研究成果。
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