超單晶的 的英文怎麼說

中文拼音 [chāodānjīngde]
超單晶的 英文
superindividual
  • 超 : Ⅰ動詞1 （越過; 高出） exceed; surpass; overtake 2 （在某個范圍以外; 不受限制） transcend; go beyo...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 的 : 4次方是 The fourth power of 2 is direction
  1. By evaperation of methol with a little pyridine existing, we abtained the supramolecular structure of resorcinarene binding molecular of water by hydrogen bond. this is a clathrate complexation which possessed a novel three dimention supramolecular structure

    本文研究了間杯芳烴同吡啶分子于甲醇中形成的超分子體系，其單晶結構表明，間杯芳烴同吡啶分子通過氫鍵自組裝形成了籠形包合物的超分子結構。
  2. In the crystal resorcinarene possessed the cone conformation, in array of head - tail columniation tube. actone molecular sited in the tube between two resorcinarenes. for the first time the one dimention nano - supramolecular - tube with association of neutral moleculer but not metal ion is reported

    本文以間杯芳烴為超分子構造塊，分析了它在丙酮、水存在下的單晶結構，發現，在多種弱相互作用力作用下，得到了新穎的納米級一維超分子管道。
  3. Mlg series ultrasoning system is designed by our compeny, combining with the advantages of foreign and domestic trades. the instrument id mainlu used is single monocrystal silicon sheet, electric parts, lens, hardware and precision mechanical parts

    Mlg系列超聲波清洗系統，是本公司結合國外清洗機的特點精心設計，主要運用於單晶矽片、太陽能矽片、電子零件、光學鏡片等行業。
  4. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  5. In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays

    本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。
  6. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  7. Relaxor ferroelectric single crystals, such as pb ( mg1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pmnt ) or pb ( zn1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pznt ), have been reported to exhibit an extremely large piezoelectric constant and excellent electrostrictive properties. such excellent performance makes it fully substitute the traditional piezoelectric ceramics and points to a revolution in ultrasonic transducers, actuators and micro - positioners, making relaxor - based piezocrystals the most promising materials for a broad range of advanced applications. however, it is difficult to grow the high quality single crystals because of the lack of valid thermodynamic data

    新型弛豫鐵電單晶鈮鎂酸鉛（簡稱pmnt ）或鈮鋅酸鉛（簡稱pznt ）是一類新興的功能材料，其在準同型相界附近具有優于傳統壓電陶瓷的較高的壓電常數和電致伸縮系數，可完全代替傳統的壓電陶瓷作為超聲換能器、致動器、微位移器等，使其成為鐵電領域的研究熱點，但如何生長出滿足應用要求的單晶材料卻一直是一個困擾的問題。
  8. Sgrseries ultrasonic cleaning system is designed by our company, combining with the advantages of foreign and domestic trades. the instrument is mainly used is single monocrystal silicon sheet, electric parts, lens, hardware and precision mechanical parts

    Sgr系列超聲波清洗系統，是本公司結合國外清洗機的特點精心設計的，主要運用單晶矽片、電子零件、光學鏡片、小五金和精密機械零件等行業。
  9. High - prcesion processing of silicon carbide

    單晶片的超精密加工
  10. The lattice parameter of obtained ultrafine ni powders is 0. 35288nm which is larger than that of the perfect ni single crystal

    Xrd精確測定所得超細鎳粉的晶格常數為a = 0 . 35288nm ，比完整ni單晶的晶格常數大，晶格發生了膨脹。
  11. The analysis result indicates that, kdp crystal mechanics characteristics, such as young ’ s modules, shear modules, rigidity and so on, have intense anisotropy, which is the reason of the scallop distribution of light and shade appearing on

    結果表明， kdp晶體材料的力學特性如彈性模量、剪切模量、硬度等具有強烈的各向異性特徵，這種各向異性特徵是單晶脆性材料超精密切削后產生明暗相間扇形分佈的根源，是影響加工表面質量的重要因素。
  12. ( 3 ) by fitting, g value of films keeps approximately a constant value 2. 08 similar to that of fe / gaas films and bulk fe

    （ 3 ）朗道因子g約為2 08 ，這與以gaas為襯底fe單晶超薄膜的g因子接近。
  13. Ultrahigh piezoelectric response along some special cleavage plane in batio3 single - crystals

    鈦酸鋇單晶沿垂直解理面方向的超高壓電響應的研究
  14. The test result of the rene95 sample showed that the maximum ultimate tensile strength can be as high as 1400mpa and has reached 97. 9 % of that of the sample fabricated by powder metallurgy ( pm ). the plastic elongation of the test sample can even exceed that of pm. the ultimate tensile strength of the test sample grown from single crystal substrate has surpassed 6 % of that of grown from the stainless steel substrate, at the same time the plastic elongation surpassed 40 %

    對成形試樣的力學性能測試結果表明，強度方面_ b最大為1400mpa ，已經達到了粉末冶金的97 . 9 ，塑性方面甚至超過了粉末冶金的水平；以單晶為基材的成形試樣其最大拉伸強度要比不銹鋼為基材的試樣高6 ，延伸率要高40 。
  15. Nx series ultrasoning system is designed by our compeny, combining with the advantages of foreign and domestic trades. the instrument id mainlu used is single monocrystal silicon sheet, electric parts, lens, hardware and precision mechanical parts

    Nx系列超聲波清洗系統，是本公司結合國外清洗機的特點，精心設計，主要運用於單晶矽片、電子零件、光學鏡片、小五金和精密機械零件等行業。
  16. Combined with special wettability properties, a - c films may have greater potential applications. in present thesis, a series of a - c films were prepared by magnetron sputtering technique on substrates as si ( 100 ) and glass, and the deposited processes were controlled to adjust the morphology of the surfaces of a - c films. to further obtain the desired wettability, surface chemistry compound of the lotus - like surfaces were plasma modified by optimized processes

    本文採用磁控濺射系統在普通玻璃和單晶硅上獲得了具有不同表面形貌特徵的非晶碳薄膜，此外利用等離子體表面處理系統，通過改進工藝方法，優化工藝條件，對非晶碳薄膜表面化學組成進行調控，獲得了潤濕性能從超親水到超疏水范圍變化的表面。
  17. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  18. The pssc superchip, a single - chip implementation of the power2 s eight - chip architecture, powered the 32 - node ibm deep blue supercomputer that beat world champion garry kasparov at chess in 1997

    Pssc超級晶元是power2這種8晶元體系結構的一種單片實現，使用這種晶元配置的一個32節點的ibm深藍超級計算機在1997年擊敗了國際象棋冠軍garry kasparov 。
  19. Ultralong single crystal silicon nanowires synthesized by chemical vapor deposition

    超長單晶硅納米絲的化學氣相沉積法制備
  20. Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator

    首次採用超高真空電子束蒸發的方法在多孔硅上成功地外延出晶體質量和電學性能良好的單晶硅。
分享友人
分享到 Line

分享到臉書