超晶格結構 的英文怎麼說

中文拼音 [chāojīngjiēgòu]
超晶格結構 英文
superlattice
  • : Ⅰ動詞1 (越過; 高出) exceed; surpass; overtake 2 (在某個范圍以外; 不受限制) transcend; go beyo...
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 格象聲詞rattle; gurgle
  • : 結動詞(長出果實或種子) bear (fruit); form (seed)
  • : Ⅰ動詞1 (構造; 組合) construct; form; compose 2 (結成) fabricate; make up 3 (建造; 架屋) bui...
  • 結構 : 1 (各組成部分的搭配形式) structure; composition; construction; formation; constitution; fabric;...
  1. The mi - crocavity of 1 - - d pc and 1 - - d pc sl structure are made. we study the re - flection and transmission characteristics of the microcavities

    製作了一維光子的微腔和一維光子超晶格結構的微腔,研究了由此組成的微腔的反射、透射特性。
  2. Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations

    的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩,振蕩產生的條件依賴于其參數,摻雜濃度和外加偏壓的大小。
  3. When increasing the oxygen pressure, the rheed pattern changes to streaky one again. this rheed pattern transformation induced by the oxygen pressure is reversible. ex situ xps results indicate that the element ni of lno film deposited in the relatively low oxygen pressure with thickness below the critical value exists in the form as ni2 +, while as ni3 + in the relatively high oxygen pressure

    隨著膜厚增加而過約30nm的臨界厚度時,越來越多的氧會移動到了薄膜表面,此時所提供的氧將使得后續生長的lno膜層重新形成鈣鈦礦,並以層狀方式外延生長。
  4. Analysis of microstructures of laalo3 batio3 superlattice

    3薄膜界面分析
  5. Numerical study of voltage - current characteristics in a three - quantum - well superlattice unit

    三量子阱單元電流特性的數值研究
  6. Effect of structural parameters on current - voltage characteristics in a three - quantum - well superlattice unit

    參數對三量子阱單元伏安特性的影響
  7. Electronic transport in a quantum - dot superlattice, consisting of an array of negative potential, has been studied by making use of the recursive green ' s function method

    摘要用遞歸林函數方法研究了一種周期排列而成的量子點超晶格結構中的電子輸運性質。
  8. 3. we have analyzed the single layer material, quantum well material and material comprise of superlattice by using kinematics and dynamics in a comparative way

    3 .對單外延層材料、量子阱材料、含超晶格結構材料等,分別應用動力學理論和運動學理論作了對比分析。
  9. Experimentally, an interesting six - route ndr characteristic, resulting from the form of split miniband structures and the extension of high - field domain in the superlattice, is observed at room temperature

    實驗的果顯示,由於此分?迷你帶超晶格結構中高場區域的擴展,于常溫下可觀察出?道軌跡之多重負微分電阻特性。
  10. For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias

    為獲得?多軌跡的負微分電阻,本研究組件使用?相當薄之砷化銦鎵?子井,可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階,且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。
  11. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長導、鐵電、鐵磁等多種性質的鈣鈦礦氧化物薄膜的基礎上,討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學,在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下,利用低溫三步法工藝制備得到有很強織的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦薄膜的取向有著相當大的影響
  12. Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices

    利用mg _ xzn _ ( 1 - x ) o薄膜,可以在保持zno六方纖鋅礦( wurtzite )的同時有效調節調節薄膜的禁帶寬度,制備出基於氧化鋅的量子阱、及相關的光電器件,如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。
  13. A one - - dimensional photonic crysta1 ( l - - d pc ) model is developed and used to calculate the energy band structures of 1 - - d pc and 1 - - d pc su - per1attice ( sl ) based on fdtd method

    採用該方法研究了一維光子體及一維光子的能帶。計算了一維光子體及一維光子的透射(反射)譜。
  14. It plays a significant role in the studies of the in - plane optical anisotropy of the lower dimensional structures of semiconductor materials their quantum - well superlattices, or the semiconductor surface restructuring, or the real time monitoring in the semiconductor epitaxy growth process

    它對研究半導體材料及其量子阱等低維中的平面內光學各向異性、半導體表面重和對外延生長過程中的實時監控都具有重要作用。
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