超高真空 的英文怎麼說

中文拼音 [chāogāozhēnkōng]
超高真空 英文
extra high vacuum
  • 超 : Ⅰ動詞1 （越過; 高出） exceed; surpass; overtake 2 （在某個范圍以外; 不受限制） transcend; go beyo...
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 真 : Ⅰ形容詞（真實） true; genuine; real Ⅱ副詞1 （的確; 實在） really; truly; indeed 2 （清楚確實） cl...
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 超高 : 1 （鐵路彎線的外軌加高） superelevation2 （船的出水高度） freeboard; freeboard height3 super high...
  • 真空 : [物理學] vacuum; empty space; vacuo
  1. Specifically for the iron and steel industry during the past 15 years, thermo electron has installed over 100 mass spectrometers for gas analysis applications involving the following plants : coke ovens, blast furnace ( bf ), direct reduction iron ( dri ), basic oxygen furnace ( bof ), electric arc furnace ( eaf ), argon oxygen decarburization ( aod ) furnace, vacuum oxygen decarburization vod furnace and ruhrstahl - hausen ( rh ) furnace

    尤其在過去15年的鋼鐵行業中，超過100臺過程質譜儀用於氣體分析，包含：焦爐，高爐，直接還原煉鐵爐，氧氣頂吹轉爐，電弧爐，氬氧脫碳轉爐，真空氧氣脫碳爐和循環法真空脫碳爐。
  2. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  3. High - purity transition metal evaporation source for uhv

    超高真空中使用的高純過渡金屬蒸發源
  4. Ultrahigh vacuum evaporation

    超高真空蒸發
  5. Uhv system in shanghai ebit cryo - superconduction chamber

    裝置低溫超導段超高真空系統
  6. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  7. By improving surface condition of parts and one shot seal - off clean room grade, using ultrasonic vapor phase cleaning process, the inner parts of vacuum interrupter get cleaner. movable particles have been diminished by automatic current ageing, power frequency hi - voltage ageing and dynamic high current ageing. as the dielectric strength of clearance in vacuum interrupter improved, the probability of re - ignition in test drops evidently

    通過提高零件表面加工質量，改善一次封排間的真空衛生條件、制定合理的超聲波氣相清洗工藝提高管內潔凈度，採用自動電流老煉、超高壓工頻老煉、大電流動態老煉等工藝進一步消除真空滅弧室內活動性微粒，可提高真空滅弧室真空間隙介質強度，使真空開關投切電容器組的重燃率大大降低，並通過實驗驗證真空開關投切電容器組的重燃率在製造工藝改進後由原來的10 . 7 %降低至1 . 3 % 。
  8. Ultra - high vacuum flange - copper seal gaskets

    超高真空法蘭用銅密封墊
  9. Ultra - high vacuum flange - dimensions

    超高真空法蘭尺寸
  10. Ultra - high vacuum flange - types

    超高真空法蘭結構型式
  11. Ultra - high vacuum flange

    超高真空法蘭
  12. In year 2005, our new main plant was built in jiading district, shanghai. hugong valve factory has also recently employed 556 people, including 158 technical engineers and 3 senior engineers. we also have more than 10 workshops for precise casting, hot forging and stamping, welding, heat treatment, finishing, machining and assembly

    下設精密鑄造熱鍛壓焊接熱處理精加工裝配等十多個車間擁有數控加工中心等離子焊接機全自動氣體保護焊半自動真空熔焊機超頻真空熱處理車球專用數控車床高效加工專機理化和探傷設備等各類加工檢測設備300多臺套。
  13. Finally, eels and aes were combined to study initial oxidation processes of uranium, niobium and uranium - niobium alloys in an ultra - high vacuum chamber at the temperature of 373k, 473k, 573k and 673k

    最後，還利用eels和aes研究了超高真空下不同溫度（ 373k 、 473k 、 573k和673k ）時鈾、鈮及鈾鈮合金的初始氧化過程。
  14. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  15. Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

    Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。
  16. Ultrahigh - vacuum components, meticulously cleaned according to “ voodoo ” recipes, produce the world ' s best vacua and protect the atoms from the violent collisions that occur in room - temperature gases such as the air around us

    他們小心翼翼地以獨門秘方清潔超高真空中的元件，製造出世界上最佳的真空，使原子云不會受室溫氣體（例如我們身邊的空氣）的猛烈撞擊。
  17. Different from fabricating sbd with bulk semiconductor, thin semiconductor films were utilized as the active layer in order to minimize the series resistance. si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ). the sbd with rectifying performance was developed, using si epilayer as the active layer

    利用我們自行研製的超高真空化學氣相沉積（ uhv - cvd ）技術外延了亞微米級的si薄膜，成功的製作了具有整流特性的高頻薄硅肖特基二極體的原型器件。
  18. Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator

    首次採用超高真空電子束蒸發的方法在多孔硅上成功地外延出晶體質量和電學性能良好的單晶硅。
  19. In this study, on the base of the present status and future development of semiconductor materials for solar cells, we have carried out the work to compose film structures of si - based materials by theoretical analysis and experimental methods, which have potential application in modules of solar cells. the processing, features of microstructure and optical properties of the designed si - based thin films have been studied in detail by employing methods of xrd, sem, afm, tem, raman, ftir, uv - vis, pl, and ellipsometry spectroscopy ( se )

    本文在全面總結目前太陽電池材料的研究現狀和其未來發展趨勢的基礎上，系統地從理論和實驗兩方面對應用在太陽電池板上的si基薄膜材料的結構進行了設計，用超高真空磁控濺射儀研究了其制備工藝，用了xrd 、 sem 、 afm 、 tem 、 raman 、 ftir 、 uv - vis 、 pl和橢圓偏光儀（ se ）等分析手段研究了薄膜的相結構、微觀組織特徵和其所具有的光性能。
  20. Ultra - high vacuum

    超高真空
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