軟擊穿 的英文怎麼說

中文拼音 [ruǎnjīchuān]
軟擊穿 英文
soft break down
  • 軟 : Ⅰ形容詞1 （質地不硬） soft; flexible; supple; pliable 2 （柔和） soft; mild; gentle 3 （軟弱） we...
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  1. The wire corresponds to the thermal class " h " ( 180 ? c ). it has an resistance to heat shock. it is widely used for the can be employed in hight - tempera - ture motors and electrical instuments and apparatus

    該產品耐溫等級為h級（ 180 ? c ） ，漆膜具有較好的耐熱沖擊性能和軟化擊穿性能，高溫電機和一般電器、儀表均可適用。
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. Using two - dimensional numerical simulation software, analyze the affect of isolated - trench ' s parameters on the breakdown voltages of three - class bipolar power devices ( whose ideal breakdown voltages correspond to 40v, 70v and 100v ), which include width, depth, isolated material ' s dielectric constant, fixed interface - charge and field plate located at the top of deep - trench termination

    利用二維數值模擬軟體分析了影響三類典型應用的雙極功率器件（對應的理想擊穿電壓bv _ （ cro ）分別為： 40v ， 70v ， 100v ）擊穿電壓的諸多因素（主要包括阱寬度、阱深度、阱內填充介質、界面固定電荷、阱區頂端場板） 。
  4. Distribution of electromagnet field in the space of h - type rf ion source is worked out derivation from maxwell equations, and three - dimensional vector graphs of e and b in the space of rf ion source are calculated and plotted by mafia software

    並採用mafia軟體進行了三維實體建模，計算了高頻離子源放電擊穿前和穩定工作后的電磁場分佈，得到了高頻離子源放電空間電磁場分佈的直觀圖像。
  5. That he can be more extreme, he can cover himself in baby oil on the cover of gq, he can wear black painted fingernails and big fedoras and baited boxing shorts, which most footballers as you say, could not do because it would n ' t really fit with their image.

    他可以很出位，身上塗滿嬰兒油出現在gq的封面上，他可以塗著黑指甲，帶軟呢帽，穿拳擊短褲。大多數球星都不可能這樣做，因為那不符合他們的形象。
  6. High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination

    由於金屬雜質原子擴散並沉積在器件的有源區，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。
  7. Then the ideal models ( dielectric isolation structure with high - voltage interconnection and without high - voltage interconnection ) are simulated by a 2d device simulator medici respectively. according to the simulation results, the two models ’ breakdown mechanism is analyzed and compared, and the influence of the isolated trench structure parameter on breakdown - voltage is studied, synchronously

    藉助二維數值模擬軟體medici對理想模型（有、無高壓互連線兩種情況的介質隔離結構）進行模擬，分析其耐壓機理，研究隔離槽參數（槽寬、槽內氧化層厚度）對擊穿電壓的影響。
  8. And then some terminal techniques on pic, devices simulation theory, resurfs effect and medici software are presented. at last three kinds of high voltage power devices have been designed and simulated. based on the analysis of the breakdown voltage and electric field distribution of the high power devices, the key physics and structural parameters effects on the breakdown voltage are found

    本文首先介紹了國內外功率集成電路的發展狀況，然後介紹了高壓集成電路中的幾種終端技術、 resurf效應、器件模擬的基本理論和medici器件模擬軟體，最後對三種型號的高壓功率器件的擊穿特性進行了分析和計算機模擬，指出了影響器件電壓的關鍵的物理和結構參數，並對這三種型號的器件進行模擬，得出的電特性曲線和參數基本上與公司給出的一致。
  9. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  10. Cut - through temperature

    切通溫度軟化擊穿溫度
  11. Cut - through test

    切通試驗軟化擊穿試驗
  12. A real - time monitor system for high voltage thyristor vale is developed, which monitors the faults of over - current, over - voltage in the system and situation of thyristor failure and bod activation. the hardware and software of monitor system is illuminated

    論文研製開發了高壓晶閘管閥的實時監控系統，對系統的過流、過壓等故障及晶閘管閥的元件擊穿、過壓保護動作等狀態進行監控，並對其硬體電路和軟體結構進行了說明。
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