載子濃度 的英文怎麼說

中文拼音 [zǎizinóng]
載子濃度 英文
carrier concentration
  • : 載Ⅰ名詞(年) year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : 形容詞1. (液體或氣體中所含的某種成分多; 稠密) dense; thick; concentrated 2. (程度深) (of degree or extent) great; strong
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  • 濃度 : potency; thickness; concentration; consistence; strength; consistency; density
  1. The density of carriers in the region has been depleted.

    在這個區內的被消耗殆盡。
  2. 6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient

    5 、用等離體增強的化學汽相沉積的方法制備了zn3n2薄膜,首次通過熱氧化zn3n2的方法,制備出了受主型為1017cm - 3的p - zno薄膜。
  3. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響,並具體給出了摻雜cdte多晶薄膜的電導、及遷移率等參數值。
  4. Second part - the main contribution and research results of this paper are focused on as follows : ( 1 ) how to use the measurements of a dual frequency gps receiver to determine the ionospheric delay correction model for single frequency gps of a local range ; ( 2 ) how to separate the instrumental biases with the ionospheric delays in gps observation ; ( 3 ) how to establish a large range grid ionosphere model and use the gps data of chinese crust movement observation network to investigate the change law of ionospheric tec of china area ; ( 4 ) how to improve the effectiveness of correcting ionospheric delays for waas ' s users under adverse conditions. ( 5 ) how to establish the basic theory and the corresponding framework of monitoring the stochastic ionospheric disturbance using gps ( 6 ) how to improve the modelling ability of ionospheric delay according to its diurnal, seasonal, annual variations based on gps ; ( 7 ) how to meet the demand of correcting the ionospheric delay of high - precision orbit determination for low - earth satellite using a single frequency gps receiver 1 extracting ( local ) ionospheric information from gps data with high - precision the factors are systematically described and analyzed which limit the precision of using gps data to extract ionospheric delays

    二、具體研究工作的系統報告,主要集中在以下幾方面:研究如何利用單臺雙頻gps接收機的觀測信息確定電離層延遲改正模型,為小范圍的單頻用戶服務;研究如何實時分離gps觀測中的儀器偏差與電離層延遲;研究如何建立較大區域的電離層格網模型,進而初步設想利用中國地殼運動觀測網路深入研究我國領域的電離層的電變化規律;研究單頻用戶在不利條件下,如何更好地利用電離層延遲改正信息;研究利用gps監測隨機電離層擾動的基本理論和框架方案;研究如何綜合顧及電離層的周日、季節和年變化,進一步提高利用gps模擬電離層延遲的能力;研究如何實現星單頻gps低軌衛星的精密測軌中的電離層延遲改正要求。
  5. High surface hole concentration p - type gan using mg implantation

    應用mg離注入獲得高表面空穴p -型gan
  6. Its oxygen - sensitivity is related to its oxidation and reduction process and non - stoichiometric ratio. in la _ 2nio _ 4 + system with excess oxygen, the conductivity is in proportion to o21 / 6. the effect of doping on a and b site have been studied in this paper

    其本身的氧化還原過程和非化學計量是其氧敏性的根源,在氧過剩的la _ 2nio _ 4 +系統中與氧分壓的1 / 6次方成正比。
  7. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型;發現在650到850溫范圍內,隨著退火溫的升高,樣品的方塊呈下降趨勢,而遷移率呈上升趨勢;這是由於在退火過程中,隨著退火溫的升高,有更多的mn參與mnas相的形成,使得以替位受主形式存在的mn減少,並且晶格缺陷得到恢復所致。
  8. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明:生長溫是一個重要的生長參數,它對外延層的表面形貌、組分、結晶質量、遷移率、有著很大影響。
  9. Pure cdte films have high electrical resistivity and are slightly p - type, due to the formation of cd vacancies in the cdte lattice acting as acceptor centers. the sheet resistivity of films are about 1010 ? / ?. the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v. s. the structural and electrical properties of cdte films doped te are markedly different from pure cdte films

    ,面約105 - 6 / cm2 ,遷移率為幾百cm2 / v . s ;摻雜te元素后,薄膜衍射峰強增大,薄膜結構上出現了第二種相成分?六方結構的te ,由衍射峰強判斷該相比例較小,同時cdte薄膜的衍射峰向低角偏移,晶格< wp = 5 >常數增大。
  10. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下:首先,研究了vcsel的熱場特性,分析了電流擴展,材料參數和工作條件對于溫分佈的影響;其次,從電極電壓入手,計算出激光器中的等勢線分佈,並對不同深處的電壓和電流分佈進行比較,研究了高阻區的不同位置和不同厚、限制層和出射窗口半徑的大小對電流密和溫分佈的影響;再次,實現了電、光、熱耦合,求出了閾值電壓,計算了不同偏置電壓下的電流密分佈、分佈和熱場分佈,分析了溫變化對折射率、費米能級和光場的影響;最後,給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈,分析了n - dbr和雙氧化限制層對vcsel電流密、溫和光場分佈的影響。
  11. The total rna was purified from the germ in the liquid by the guanidine isothiocyantehod method, then the total rna digested by dnase that had not rnase was used for rt - pcr. i change the magnesium ion dencity in the pcr system in order to optimize the pcr condition. at the end i selected the magnesium ion density as 1. 25 mm. the production of rt - pcr was inserted directionally into pgem ? z ( ampr ). the pgem ? z ( ampr ) was used to transform e coli jm109. i got a positive clone through culling and identificatin. the dna sequence inserted into pgem ? z ( ampr ) was sequenced and blasted with the cdna sequence of the # - mannanase mature peptide that got from genbank

    分取誘導培養液中的菌體,用異硫氰酸胍法提取總rna ,總rna再經無rna酶的dna酶處理後用于rt ? pcr 。在pcr擴增目的基因時,通過優選擴增體系,使鎂離為1 . 25mm時rt ? pcr可順利地獲得目的基因,並能定向克隆到體pgem ? 3z ( amp ~ r )中。用克隆體轉化宿主大腸桿菌jm109 ,通過篩選獲取陽性克隆,對陽性克隆進行酶切與pcr鑒定,並對體中插入的目的基因進行測序。
  12. This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate, which were provided by merchants from home and overseas, as well as their influence on electrical parameters

    本文系統地研究了國內外各生產廠家提供的gaas襯底中用熔融koh腐蝕的位錯、 ab腐蝕液腐蝕出的ab微缺陷的密和分佈情況以及它們對襯底電參數(電阻率、遷移率、)的影響。
  13. This effect was gradually decreased with the increase of snte content in the pseudo - binary alloys as well as the increase of temperature, which is considered to be caused by the change of scattering mechanism, the saturation of carrier concentration as well as the ag atoms occupying the

    隨著膺ti合金rfsnte含量和測試溫的上升, ag摻雜的作用逐漸降低,胸二兒合金的性能逐漸惡化。其原因被認為是由於散射機制的改變、趨于飽和以及ag作為間隙原一了提供額外施主。
  14. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的大體上都是隨著擴散深的增加而下降,不同的是離注入樣品的最高處于離表面深0 . 248151 m處,而擴散樣品的最高處于表面,並摻錳( mn )砷化鋅( gaas )材料性質的研究且還發現相對于純mn源擴散樣品來說, mnas源擴散樣品的表面較為光滑,且表面高達1020 cm 』數量級。
  15. The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

    /比對外延層的表面形貌有較大影響,增大/比有利於提高材料的結晶質量;隨著/比增加,遷移率升高;本徵隨著/比減少而降低; ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層;在inp緩沖層厚為0 . 2 m時遷移率達到最大,達到最低。
  16. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次,利用霍爾測試方法測量了每種離注入樣品的電性質(方塊、方塊電阻及遷移率) ,通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫的不同,都會對樣品的電性質產生影響。
  17. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫為650 850范圍內,樣品的遷移率隨著退火溫的提高呈上升趨勢,說明雜質元素的注入對樣品造成晶格損傷,但退火對這些損傷具有修復作用;此外,隨著退火溫的上升,樣品的方塊不斷下降,加c樣品的方塊電阻不斷上升,這都是因為隨著退火溫的提高,摻入的mn ~ +離不再提供,而是形成了mnga 、 mnas等磁性第二相。
  18. On the basis of this, the effective reflective index with the variation of the carrier density is discussed. this paper also analyzed the random facet phase and the length of the cavity ' s influence on threshold characteristic. especially, the wavelength tuning characteristics have been investigated in detail when one segment works as absorbed region

    在此基礎上,研究了每一段等效反射率譜曲線隨變化的情況;分析了邊界相位的不確定性以及激光器腔長對閾值特性的影響;重點討論了其中一段工作在吸收狀態下的波長調諧性質。
  19. The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor, ionization effects of neutron on the vlsi made with cmos technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray

    對試驗結果綜合分析得出:在反應堆的綜合輻照環境下,中電離效應較弱,並且由於中位移效應引起遷移率降低和降低,使得總的靜態電流下降,從而抵消中和射線綜合電離導致的靜態電流增長。
  20. In this paper the average field is used to describe the carrier in each segment based on the carrier distribution in two - segment dfb lasers and the strict coupled wave theory is used to describe the photon density. combined with these two methods, the threshold condition expression has been derived for the first time

    基於兩段式dfb激光器中的分佈事實,本文對每一段內的用平均場方法處理;對于激光器內的光場分佈則應用嚴格的耦合波理論進行研究,通過將這兩種方法有機結合,首次導出了兩段式dfb激光器的閾值條件表達式。
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