載流子濃度 的英文怎麼說

中文拼音 [zǎiliúzinóngdù]
載流子濃度 英文
carrier concentration
  • 載 : 載Ⅰ名詞（年） year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 濃 : 形容詞1. （液體或氣體中所含的某種成分多; 稠密） dense; thick; concentrated 2. （程度深） （of degree or extent） great; strong
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 濃度 : potency; thickness; concentration; consistence; strength; consistency; density
  1. The density of carriers in the region has been depleted.

    在這個區內的載流子濃度被消耗殆盡。
  2. 6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient

    5 、用等離子體增強的化學汽相沉積的方法制備了zn3n2薄膜，首次通過熱氧化zn3n2的方法，制備出了受主型載流子濃度為1017cm - 3的p - zno薄膜。
  3. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  4. High surface hole concentration p - type gan using mg implantation

    應用mg離子注入獲得高表面空穴載流子濃度p -型gan
  5. Its oxygen - sensitivity is related to its oxidation and reduction process and non - stoichiometric ratio. in la _ 2nio _ 4 + system with excess oxygen, the conductivity is in proportion to o21 / 6. the effect of doping on a and b site have been studied in this paper

    其本身的氧化還原過程和非化學計量是其氧敏性的根源，在氧過剩的la _ 2nio _ 4 +系統中載流子濃度與氧分壓的1 / 6次方成正比。
  6. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  7. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。
  8. Pure cdte films have high electrical resistivity and are slightly p - type, due to the formation of cd vacancies in the cdte lattice acting as acceptor centers. the sheet resistivity of films are about 1010 ? / ?. the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v. s. the structural and electrical properties of cdte films doped te are markedly different from pure cdte films

    ，面載流子濃度約105 - 6 / cm2 ，載流子遷移率為幾百cm2 / v . s ；摻雜te元素后，薄膜衍射峰強增大，薄膜結構上出現了第二種相成分?六方結構的te ，由衍射峰強判斷該相比例較小，同時cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常數增大。
  9. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  10. This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate, which were provided by merchants from home and overseas, as well as their influence on electrical parameters

    本文系統地研究了國內外各生產廠家提供的gaas襯底中用熔融koh腐蝕的位錯、 ab腐蝕液腐蝕出的ab微缺陷的密度和分佈情況以及它們對襯底電參數（電阻率、遷移率、載流子濃度）的影響。
  11. This effect was gradually decreased with the increase of snte content in the pseudo - binary alloys as well as the increase of temperature, which is considered to be caused by the change of scattering mechanism, the saturation of carrier concentration as well as the ag atoms occupying the

    隨著膺ti合金rfsnte含量和測試溫度的上升， ag摻雜的作用逐漸降低，胸二兒合金的性能逐漸惡化。其原因被認為是由於散射機制的改變、載流子濃度趨于飽和以及ag作為間隙原一了提供額外施主。
  12. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  13. The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

    /比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。
  14. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  15. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  16. On the basis of this, the effective reflective index with the variation of the carrier density is discussed. this paper also analyzed the random facet phase and the length of the cavity ' s influence on threshold characteristic. especially, the wavelength tuning characteristics have been investigated in detail when one segment works as absorbed region

    在此基礎上，研究了每一段等效反射率譜曲線隨載流子濃度變化的情況；分析了邊界相位的不確定性以及激光器腔長對閾值特性的影響；重點討論了其中一段工作在吸收狀態下的波長調諧性質。
  17. The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor, ionization effects of neutron on the vlsi made with cmos technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray

    對試驗結果綜合分析得出：在反應堆的綜合輻照環境下，中子電離效應較弱，並且由於中子位移效應引起載流子遷移率降低和載流子濃度降低，使得總的靜態電流下降，從而抵消中子和射線綜合電離導致的靜態電流增長。
  18. In this paper the average field is used to describe the carrier in each segment based on the carrier distribution in two - segment dfb lasers and the strict coupled wave theory is used to describe the photon density. combined with these two methods, the threshold condition expression has been derived for the first time

    基於兩段式dfb激光器中的載流子分佈事實，本文對每一段內的載流子濃度用平均場方法處理；對于激光器內的光場分佈則應用嚴格的耦合波理論進行研究，通過將這兩種方法有機結合，首次導出了兩段式dfb激光器的閾值條件表達式。
  19. Electrochemistry c - v method was employed to measure the carrier concentration profile distribution of samples, discovered that the carrier concentration decreased with increasing of the diffusion depth, and the peak of concentration located at 0. 25 m beneath the surface

    利用電化學c - v法對樣品的載流子濃度的縱向分佈進行了研究，發現在距離樣品表面0 . 25 m處載流子濃度達到最大。
  20. Determination of carrier concentration in gallium arsenide by the plasma resonance minimum

    砷化鎵中載流子濃度等離子共振測量方法
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