載流子能量 的英文怎麼說

中文拼音 [zǎiliúzinéngliáng]
載流子能量 英文
carrier energy
  • 載 : 載Ⅰ名詞（年） year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 能 : 能名詞（姓氏） a surname
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 能量 : 1 [物理學] energy; amount of energy 2 （能力） capabilities; capacity; 能量不滅 conservation of e...
  1. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  2. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  3. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  4. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  5. In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet

    本文通過求解自洽薛定諤方程，確定了應變硅mosfet反型層的子能帶結構，在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率，綜合考慮各子能帶上的載流子的濃度分佈，建立了應變硅mosfet載流子遷移率的解析模型。
  6. After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened

    為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。
  7. Considering the relations between idle load characteristics and armature winding parameters of the salient pole propulsive synchronous motor ( spsm ) with its structure, stator tooth and magnetic saturation, the analysis of numerical method for the back electromotive force calculation of spsm is given under various exciting current values

    摘要針對凸極式同步推進電機的空載特性及其繞組參數與電機結構、定轉子齒槽、磁場飽和等緊密相關的問題，分析了在不同勵磁電流下同步推進電機相反電勢的數值計算方法，提出了採用電機磁場能量微動法計算相繞組的參數，並對一臺十二相同步推進電機的繞組參數及其空載特性進行了計算和測量。
  8. Secondly, to achieve the independent regulation of active and reactive power output from the generator side which is designed for the purpose of tracing the maximum wind - energy capturing. the paper has analyzed the mathematic model of the ac excited doubly - fed machine and the stator field orientation control strategy of the motor as vscf wind power generator. thirdly, it has put forward and designed the dual pwm converter with the capacity of energy flowing bidirectional aimed at the demand of rotor energy bidirectional flow. the author constructed reliable and integrated experimental system and did a series of experimental study including no - load, cutting - in network and power generation at, below and above the synchronous speed

    論文首先分析了風機運行特性及其最佳風能利用原理，通過模擬及實驗驗證了採用直流電機的輸出特性模擬風力機的最大輸出功率曲線的可行性，並給出了模擬系統的硬體結構；然後為了實現交流勵磁發電機有功、無功功率獨立調節機理，分析了交流勵磁雙饋發電機的數學模型和在追蹤最大風能捕獲變速恆頻風力發電時必需的定子磁鏈定向矢量控制策略；針對雙饋發電機轉子能量雙向流動的要求，提出並設計了具有能量雙向流動能力的雙pwm交流勵磁用變頻器；最後為實現從理論到實踐的全面研究，研製出了一套小功率完整的雙pwm變頻器交流勵磁的雙饋風力發電機實驗系統，進行了空載、並網、同步速及上、下的發電運行等一系列的運行實驗；所完成的模擬和實驗研究均驗證了理論、模型和控制策略的正確性、可行性。
  9. Referring to the formation process of qd, it is accepted that there formed a groove around the dot during the formation process due to mass - transfer. when the dots were capped by a compound with larger band gap, there will appear a potential maximum due to larger confinement. the maximum will prevent the carriers from entering the dot, and the origin of the kink point is resulted from the prevention

    根據s - k模式量子點的形成過程，我們認為在點的形成過程中由於質量遷移會在點的周圍形成一個凹槽，加上覆蓋層后，由於大的量子限域效應該處將形成一個勢能極大值，該勢能極大值將阻礙載流子從勢壘層向量子點的注入，該過程是導致上述拐點出現的原因。
  10. This effect was gradually decreased with the increase of snte content in the pseudo - binary alloys as well as the increase of temperature, which is considered to be caused by the change of scattering mechanism, the saturation of carrier concentration as well as the ag atoms occupying the

    隨著膺ti合金rfsnte含量和測試溫度的上升， ag摻雜的作用逐漸降低，胸二兒合金的性能逐漸惡化。其原因被認為是由於散射機制的改變、載流子濃度趨于飽和以及ag作為間隙原一了提供額外施主。
  11. The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content. in this paper, the electrical conductivity reaches maximum value at x = 0. 4. below the temperature corresponding to the maximum value, the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism, charge compensation of oxygen vacancy dominates electrical conduction at high temperature, and oxygen vacancy acts as traps to catch carriers, resulting in the decrease of carriers concentration and mobility

    通過電學和熱學性能測試結果表明，電導率隨著sr含量的增加以及溫度的變化都出現了極大值，在本論文中，在sr含量為0 . 4時電導率值最大，電導率最大值對應的溫度隨著sr含量的增加而降低，這是由於在低溫下以小極化子導電機理為主，在高溫階段則是氧空位的電荷補償占據主導作用，氧空位使得載流子的濃度和可動性減弱，從而導致電導率降低。
  12. Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively

    其次，由於一直以來藍光oled器件的研究處于相對落後的狀態，其發光亮度、效率、穩定性和色純度都無法綠光器件相比，所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 ）研究了雙異質型藍光oled器件，由於本研究引入了空穴阻擋層，使得載流子的復合和激子的擴散被限定在發光層內，器件的發光效率達到了1 . 90lm / w ，最大亮度達到了10000cd / m2 ，比傳統結構器件的效率和亮度提高了約一個數量級; 2 ）制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件，研究發現，當改變各有機層厚度時，器件的電致發光光譜發生了從綠光到藍光的移動。
  13. The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost

    與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。
  14. Led stands for light emitting diode, a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light, using the characteristics of compound semiconductor. this is used for household appliances, remote controller, electric bulletin board, various kinds of automation appliances

    它是利用固體半導體晶元作為發光材料，在半導體中通過載流子發生復合放出過剩的能量而引起光子發射，直接發出紅黃藍綠青橙紫白色的光。
  15. With the introduction of the dopants, the effective mass of carriers was changed and the seebeck coefficient was increased. at the mean time, the dopants reduced the forbidden energy gap, which changed the carrier concentration and thus increased electrical conductivity. by calculating the forbidden energy gap and electrical conductivity of mg2si specimen doped with different amount sb, the mechanism of transference changed abruptly at 625k

    在mg _ 2si熱電材料基體中摻雜te 、 sb元素后，在結構中引入了缺陷，增大了體武漢理工大學博士學位論文系中載流子有效質量，提高了seebeck系數;降低了體系導電活化能，提高了電導率，同時也降低了熱導率。
  16. Because of the anatase ' s broad eg ( 3. 2ev ), the absorption thresholds correspond to 380nm for the tio2. consequently, only the ultraviolet fraction of the solar irradiation can be active in the photoexcitation processes using pure tio2 solid. the high recombination rate of charge carrier and low efficiency of quantization are also the deficiencies of pure tio2

    由於tio _ 2的帶隙較寬（約3 . 2ev ） ，半導體的光吸收波長范圍窄（主要在紫外區） ，故其太陽能的利用效率低，且還存在半導體載流子的復合率高，量子化效率低等缺陷。
  17. The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab - epd in gaas substrate was not uniform ; secondly, the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly, mesfet devices performance correlated with ab microdefects ; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices

    實驗結果表明， lecsi - gaas的電阻率、遷移率、載流子濃度、位錯密度和ab微缺陷分佈都不是均勻的，且電參數的分佈與ab - epd 、位錯密度分佈有關。製作的mesfet器件的性能參數分佈與ab微缺陷有明顯聯系。從plmapping測量結果可以看出材料的襯底參數好，則pl譜的強度高， pl譜均勻性也好，器件參數也好，就有可能製作出良好的器件與電路。
  18. Agrawal ' s theory model of soa ca n ' t simulate accurately the amplified signal pulse shape in soa when the pulse width is as short as several picosecond. so we simulate accurately the peak power, full width half maximum, rising time and falling time of amplified pulse after considering the gain compression, gain asymmetry, gain shift, gain variable with situation and time. with ultrahigh velocity dense wavelength division multiplexing ( dwdm ) and optical time division multiplexing ( otdm ) developing, we demand more and more short signal pulse and more signal channels

    但當信號脈沖的寬度只有幾個皮秒時， soa傳統的agrawal理論模型已經不能完全準確地模擬soa對信號脈沖的放大情況，在此基礎上，我們在全面考慮soa的增益壓縮、增益非對稱和漂移、增益隨位置和時間變化的載流子壽命等物理機制的情況下，對皮秒超短高斯信號光脈沖經soa放大后的脈沖的峰值功率、脈沖半值全寬度、脈沖的上升時間和下降時間等重要物理參量進行了準確模擬和詳細研究。
  19. The contact angle for water of the film which prepared according to above conditions is 4 ? ( 2 ) b plus voltage is 1. 2kv ; sputtering time is 80min ; the target parameters are : 100 % anatase tio2, the thickness is 6. 5mm, the diameter is 53. 5mm, the quality is 24. 99g and the density is 1. 71g / cm3 ; anode current is imax. the constant of reaction kinetics of the film which prepared according to above conditions for degrading methyl orange is 0. 0192

    Fe20 ;的摩爾含量為0 . 5 %時光催化活性最好;而在fezo3的摩爾含量為0 . 05一0 . 1 %時，獲得了具有超親水性能的復合薄膜;但fezo3 / tio :的疊層膜及復合疊層膜的光催化活性及親水性能均不理想，主要原因是fezo3的存在具有光生載流子復合中心的作用。
  20. Experimental results indicated that for the two reverse - bias stresses the degradation of the devices depended on magnitude and energy of the injected carriers. fc stress condition may speed up the degradation of devices and shorten the time of evaluating the devices life

    在實驗中我們發現對這兩種應力，器件的退化與注入的熱載流子的數量以及能量有關， fc應力方法可以加速器件的退化，縮短評估器件壽命的時間。
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