載體遷移率 的英文怎麼說
中文拼音 [zǎitǐqiānyílǜ]
載體遷移率
英文
carrier mobility- 載 : 載Ⅰ名詞(年) year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
- 體 : 體構詞成分。
- 遷 : Ⅰ動詞1. (遷移) move 2. (轉變) change 3. (古時指調動官職) be appointed to a certain post Ⅱ名詞(姓氏) a surname
- 移 : Ⅰ動詞1. (移動) move; remove; shift 2. (改變; 變動) change; alter Ⅱ名詞(姓氏) a surname
- 率 : 率名詞(比值) rate; ratio; proportion
- 載體 : [化學] carrier; supporter; isotopic carrier
- 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
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Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance
討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響,並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed
與體si器件相比,採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率,更大的跨導,更強的電流驅動能力以及更快的電路速度等等。Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近幾年才出現的新型器件,它將soi材料和sige材料結合在一起,與傳統體硅器件相比,表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢,特別適用於高性能、高速度、低功耗超大規模集成電路。It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x
晶體的電學性能,發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大,載流於的濃度np減小,遷移率p 。The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem
論文的最後一章中,我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺( ddp ) ;研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性,並用量子化學計算方法模擬其單分子的空間構型;載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes
碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體,載流子遷移率高,電子飽和漂移速度大,更適合於製造電子器件特別是電力電子器件之用。However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果,實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯,但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大;氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用,但經過高溫處理后這種作用消失;氮化硅薄膜能提高單晶硅和多晶硅的少子壽命,具有表面鈍化和體鈍化的雙重作用;氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度,進而使電池效率有不同程度(絕對轉換效率0Both the theoretical simulation and experiment results show that the relationship between eff and eeff in strained - si is similar to the one in bulk si. the mobility reaches its maximum when eeff equals to 2 105v / cm
理論分析和實驗結果表明,應變硅載流子遷移率與橫向電場eeff的函數關系與體硅材料類似,峰值遷移率所對應的eeff為2 105v / cm 。Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug
多晶硅薄膜晶體管( p - sitft )液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗,因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
,面載流子濃度增大到109 / cm2的數量級,遷移率亦增大到104cm2 / v . s ,摻雜te元素改善了cdte薄膜的電學性質,使其變為良好的p型半導體。分享友人