輔助脈沖 的英文怎麼說

中文拼音 [fǔzhùmàichōng]
輔助脈沖 英文
satellite pulse
  • 輔 : Ⅰ動詞（輔助） assist; complement; help Ⅱ形容詞（輔助） subsidiary Ⅲ名詞1 （車輪外旁增縛夾轂的兩條...
  • 助 : 動詞（幫助; 協助） help; assist; aid; support
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 輔助 : 1. （從旁幫助） assist 2. （非主要的） supplementary; auxiliary; subsidiary
  1. Assisted activation of electrical stimulation on human mature oocytes

    人卵母細胞的電脈沖輔助激活
  2. The primary aim of the single chip microcomputer circuit of this project is data collecting, it applied the invention monopoly of professor zhang guanghui and professor peng donglin of chongqing university, make use of the high frequency inserted pulse, and join together the software to constitute subsidiary calibration distributed on equal time, complete the task of on - line subdivision in the dynamic measure process, finally up pass the data to pc, pc handle it and get examination result

    下位機是硬體集成電路，利用重慶大學張光輝教授、彭東林教授的發明專利「計算機對脈沖信號的細分與辨向新方法」 ，附加頻率極高的外部插入脈沖，結合軟體構成按時間均勻分度的輔助標尺，實現動態測量過程中采樣點的實時細分，最終完成數據採集任務；上位機主要是軟體部分，利用pc機接收下位機的採集數據並進行分析處理，得出檢測結果。
  3. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  4. Dsp56f805 samples the ultrasonic pulse coming back from the target, then measures the distance and shows it on led. tms320vc5509a is accomplished the detecting speed and the main control of the radar system, is 16 fixed dsp with high performance and low power produced by ti company. dsp5509a samples the wave coming from t / r module, then measures the target ’ s speed and send this information to the assistant control chip - p89v51 based on boost c51 core mcs produced by philips company, which controls the lcd

    測距雷達系統的控制和信號處理的核心晶元是motorola公司的dsp型16位單片機56f805 ，由它對超聲波回波脈沖進行ad采樣后，計算目標距離並在七段數碼管上顯示。測速雷達系統中信號處理的核心晶元是ti公司的超低功耗、高性能的16位定點dsp ? ? tms320vc5509a ，由它對收發組件輸出的多普勒回波進行采樣，計算出目標運動速度后，送給輔助控制晶元? ?飛利浦公司生產的基於c51內核的增強型單片機p89v51 ，並且在液晶顯示器上顯示速度信息。
  5. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  6. The flyback mode switch power supply is chosen as the main circuit of the high voltage power in the paper with 555 pulse control circuit and flyback drive circuit

    選擇了反激式開關電源作為高壓電源的主電路，並以555脈沖控制電路和反激式驅動電路作為輔助電路。
  7. The paper is s sub - topic of the research of variable polarity pulsed mig welding device and its welding stabilization

    本課題是「變極性脈沖mig焊設備及焊接穩定性研究」課題的一部分，主要針對變極性脈沖mig焊設備完成輔助控制電路設計。
  8. To assist with weak reflections and mitigating the effects of loop noise, typically a train of impulses is used and the reflections averaged

    為了輔助微弱的反射波和減輕環路噪聲的影響，典型的做法是採用一列脈沖並對反射脈沖做平均。
  9. 5. design bias and assistant circuit, realize 5. 65ghz big power amplifier ' s hardware and performance ' s test

    5 .設計偏置電路和輔助電路，完成整個5 . 65ghz大功率脈沖放大器系統的製作和調試。
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