輝度脈沖 的英文怎麼說
中文拼音 [huīdùmàichōng]
輝度脈沖
英文
brightening pulse-
The primary aim of the single chip microcomputer circuit of this project is data collecting, it applied the invention monopoly of professor zhang guanghui and professor peng donglin of chongqing university, make use of the high frequency inserted pulse, and join together the software to constitute subsidiary calibration distributed on equal time, complete the task of on - line subdivision in the dynamic measure process, finally up pass the data to pc, pc handle it and get examination result
下位機是硬體集成電路，利用重慶大學張光輝教授、彭東林教授的發明專利「計算機對脈沖信號的細分與辨向新方法」 ，附加頻率極高的外部插入脈沖，結合軟體構成按時間均勻分度的輔助標尺，實現動態測量過程中采樣點的實時細分，最終完成數據採集任務；上位機主要是軟體部分，利用pc機接收下位機的採集數據並進行分析處理，得出檢測結果。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。Then based on the principle for pcr, 20 - cycle continuous - flow pcr is designed using cad software. to the designed 20 - cycle continuous - flow pcr chip, a krf excimer laser ( direct write method ) is adopted as the fabrication technology, and the polymethyl methacrylate ( pmma ) is selected as the substrate. so the appearances of pmma surface etched before and after by 248nm excimer laser under different incident fluences are analyzed using sem
為此在應用掃描電鏡和三維形貌分析儀對pmma表面被準分子激光刻蝕前後的形貌、刻蝕粗糙度以及單脈沖刻蝕率等進行詳細分析的基礎之上，總結出了準分子激光刻蝕pmma的宏觀規律和微觀刻蝕機制，提出了一種準分子激光刻蝕pmma的是光熱光化學以及羽輝共同作用的理論解釋。
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