退光劑 的英文怎麼說
中文拼音 [tuìguāngjì]
退光劑
英文
delusterant-
In order to elaborate the app licability of osl to loess, especially single aliquot regenerative protocol ( sar ), involving stimulation of the same disc with an infra - red laser diode followed by blue leds to polymineralic fine - grains of loess, such explanations as light bleaching, preheat, anomalous fading, prior - ir exposure were investigated in this paper. for drawing adequate coarse grains from loess, quartz and feldspars, as well as loess, were etched by hydrofluoric acid and fluorosilicic acid. the sequence of ages of holocene loess in weihe rivier basin has been established by single - aliquot ( sar ) and multiple - aliquot using fine - grains and sar using coarse - grains
本文通過渭河流域全新世黃土的光曬退實驗，地表黃土樣品的d _ e值測定，細顆粒單片的預熱、反常衰退、紅外暴露實驗，說明釋光測年在全新世黃土中應用的可行性及單片再生劑量法（ sar ）在黃土細顆粒中的適用性；為了從黃土中分離出足夠的粗顆粒，進行了純石英和長石的氫氟酸（ hf ）和氟硅酸（ h _ 2sif _ 6 ）溶蝕實驗，黃土粗顆粒石英溶蝕分離實驗；通過細顆粒單片、多片的blsl 、 irsl和post - irosl ，熱釋光，及粗顆粒石英的blsl的年代測定，選擇適于全新世黃土的釋光測年方法，並建立了渭河流域全新世黃土的年代序列。Ceo22 is used as optical materials, polishing agents, ultraviolet absorption materials, the cleaning catalyst of car ' s waste gases, chemical decolorant of glass, radiation - resisting glass permanent magnet, electronic ceramics etc. if it is processed into nanoparticles, it will exhibit some novel properties led to varied applications. for example, ceo22 nanocrystal is a better promoter of cytochrome c and the stabilizer of zro22 ceramics. because of its high index of refraction and good stability, it is used to produce reduced reflection film
Ceo _ 2是一種廉價而用途極廣的材料，如用於發光材料、拋光劑、紫外吸收材料、汽車尾氣凈化催化劑、玻璃的化學退色劑、耐輻射玻璃、永磁體、電子陶瓷等，其納米化后將出現一些新的性質及應用，如ceoz納米晶是細胞色素c的良好的催進劑，還用作zro :陶瓷的穩定劑，由於ceo :折射率高，穩定性好，常用於制備減反射膜等。In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant
本文對直拉硅樣品進行了不同劑量的快中子輻照，在硅中引入大量的亞穩態缺陷，研究這些亞穩態缺陷的形成，並在較寬的溫度范圍內對輻照樣品進行了退火處理，研究退火后亞穩態缺陷的轉化及同硅中氧的相互作用，應用傅立葉變換紅外光譜技術（ ftir ） 、正電子湮沒技術（ pat ）和掃描電鏡（ sem ）進行了測試。分享友人