退化效應 的英文怎麼說

中文拼音 [tuìhuàxiàoyīng]
退化效應 英文
retrograde effect
  • 退 : 動詞1 (向後移動) retreat; draw back; move back 2 (使向後移動) cause to move back; remove; wit...
  • : Ⅰ名詞(效果; 功用) effect; efficiency; result Ⅱ動詞1 (仿效) imitate; follow the example of 2 ...
  • : 應動詞1 (回答) answer; respond to; echo 2 (滿足要求) comply with; grant 3 (順應; 適應) suit...
  • 退化 : become vestigial; degenerate; deteriorate; retrograde; devolution; retrogradation; retrogression;...
  • 效應 : [物理學] effect; action; influence
  1. Effect of mode degeneracy

    波型退化效應
  2. The humankind is troubled seriously by a series of environmental problems, such as air pollution, ozonosphere destruction, glasshouse effect, acid rain, water pollution, land pollution and soil erosion and so on. all of these will stop our economy developing

    大氣污染、臭氧層破壞、溫室、酸雨頻繁、水污染、土地污染、水土流失、草原退、森林急劇減少、珍稀動植物滅絕、沙漠急劇擴大等一系列環境問題嚴重困擾著人類,各種公害接二連三地侵襲人類,再這樣下去,經濟將變成無源之水、無本之木。
  3. The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region. the relationship of the ideality factor to the applied voltage is theoretically studied

    提出了中子輻照下sicpn結電特性退的新的理論, pn結耗盡區中的輻照陷階在耗盡區電場的作用下熱發射得到加強,從而導致pn結正偏和反偏時的復合電流和產生電流的改變。
  4. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變對深亞微米槽柵pmosfet性能的影響進行了分析,對所得結果從器件內部物理機制上進行了討論,最後與由漏源結深變導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深(凹槽深度)的增大,槽柵器件的閾值電壓升高,亞閾斜率退,漏極驅動能力減弱,器件短溝道的抑制更為有,抗熱載流子性能的提高較大,且器件的漏極驅動能力的退要比改變結深小.因此,改變槽深加大負結深更有利於器件性能的提高
  5. In light of the problems of aggravated soil erosion and litho - desertification of the karst regions in northwest guangxi as a result of degradation of forest ecosystems, six " grain - for - green " models ( five models of artificial afforestation or grass planting, and one model of desertation for natural vegetation restoration ) were screened out for quick restoration of vegetations in the regions and evaluated for their respective ecological effect

    摘要針對桂西北喀斯特地區森林生態系統退造成的水土流失加劇以及石漠嚴重的現狀,篩選適合該地區植被快速恢復的5種人工造林(草)方式和自然拋荒恢復模式,分析評價各種模式的生態
  6. As the second pillar of china ’ s pension system, occupational pension can not only make up for the insufficient payment of the public pension, cope with financial payment crisis under the background of aging population, but also contribute to the establishment of pension system, and offer security for elders at higher levels

    企業年金作為中國養老保險制度的第二支柱,不僅可以彌補基本養老金的支付不足,在人口老齡背景下有對財政支付危機,而且還有助於完善我國的養老保障體系建設,在更高層次上為我國退休老年人的生活提供保障。
  7. Simultaneity, through contrast analysis validate that antiseimic capacity of expansion web is better than that of steel web. therefore, based on the experiences summed up by precedence, the formulation for calculating the crack load and limit load of brick masonry house reinforced by expansion web is advanced, which provides project reference. based on the analysis and studies of masonry shearing strength, test of prestressed single brick masonry wall, and test of prestressed brick masonry house models, and ect, the article has carried through several aspect research as below : 1. a series of experiment on material capability of expansion web, including intensity of single thread and expansion web, ect ; 2. research on influence of loading and destroy of masonry brick building reinforced by expansion web under lowcyclic loading ; 3. study of impact of expansion web on ductility, energy dissipation, intensity, ect under the same situation as above ; 4. put forward computation formulation of masonry brick building reinforced by expansion web

    本著以上的研究目的,本文在分析和借鑒前人砌體抗剪強度理論、預力單片墻試驗研究、預力模型抗震性能試驗研究等基礎上,進行了以下幾方面的研究工作: 1 .作為一種新型結構材料擴張網,進行了一系列的材性試驗(單絲強度、網片強度和在砂漿中被約束條件下的網片強度及其相的彈性模量) ; 2 .研究了水平荷載往復作用(低周交變)下,普通鋼絲網和擴張網砂漿對砌體結構抗裂及承載能力和破壞形態的影響,並將這兩種材料的加固果進行了對比; 3 .上述狀態下,兩種網片水泥砂漿對砌體結構變形、延性、耗能、剛度退等抗震性能的影響及其影響果的比較; 4 .提出擴張網水泥砂漿加固砌體結構的抗剪強度計算建議公式。
  8. States should effectively cooperate to discourage or prevent the relocation and transfer to other states of any activities and substances that cause severe environmental degradation or are found to be harmful to human health

    各國地進行合作,以阻止或防止把任何會造成嚴重環境退或查明對人健康有害的活動和物質遷移和轉移到其他國家去。
  9. Principle 14 states should effectively cooperate to discourage or prevent the relocation and transfer to other states of any activities and substances that cause severe environmental degradation or are found to be harmful to human health

    各國地進行合作,以阻止或防止把任何會造成嚴重環境退或查明對人健康有害的活動和物質遷移和轉移到其他國家去。
  10. Also, the degradations of n - mosfet and p - mosfet are compared and the increase of delay - time induced by device degradation is represented by introducing " time - index ", and the saturation effect and temperature characteristics of device degradation are described

    另外,比較討論了p溝和n溝mosfet的退,對器件退導致的電路延遲增加則引入了「時間因子」的概念來加以明確的表徵;對器件退的飽和和溫度特性也作了分析概述。
  11. To completely avoid producing elements jointed at their corner nodes and checkerboard patterns, which frequently occur when the topology optimization of plane continuum is studied, the theory of topology analysis of plane continuum in topology optimization process and the simple algorithm for programming are studied. according to algebraic topology theory, the boundary of elements and plane continuum are operated as a one - dimensional complex. by use of the adjacency vector in graph theory, the structural topology is described and the topological operation is achieved on a computer. by above, the structural topological feature in the evolutionary process is gained. these methods are effcient and reliable. under topology constraints, according to the results of stress analysis, by deleting elements and moving nodes at the boundary, more satisfactory results can be gained by using a few numbers of elements and iterations. to demonstrate the efficiency of these methods, solutions including some well - known classical problems are presented

    避免目前平面連續體結構拓撲優過程中經常出現的單元鉸接以及「棋盤格」等現象,研究了連續體結構拓撲優過程的拓撲分析方法,以及在計算機上實現的簡便演算法.根據代數拓撲理論,單元及連續體的邊界作為1 -復形進行運算.利用圖論中的鄰接向量概念,在計算機上實現了結構的拓撲描述及拓撲運算,得到了結構在拓撲演過程中的拓撲特性,方法簡單、可靠.在一定的拓撲約束下,根據力分析結果,採用刪除單元、單元退、移動節點等方法,可以用較少單元得到更為滿意的結果,提高計算率.為演示方法的有性,給出幾個包括常見經典問題的解答
  12. In order to investigate the effect of high - field hot - carrier on devices and circuits, the electrical stress experiment is carried out with 1. 2 n m, 1. 0 n m and 0. 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology. by using the fresh and degraded experiment data, bsim2 model parameters are extracted

    為了分析研究高場熱載流子對器件和電路特性可靠性的影響,採用自動測試與cad技術相結合的監測系統,對國內溝道長度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet進行了電退實驗,並根據實驗結果提取了退前後器件的bsim2模型參數。
  13. Finally, according to the mosfet ' s parameter degradation due to hot - carrier effects and different application environment of mos devices on analog and digital circuits, the circuit structures for hot - carrier immunity are proposed for digital applications by adding a schottky diode in series with the drain of the nmosfet suffered heavily from hot - carrier degradation.,

    即在受熱載流子退化效應較嚴重的n mosfet漏極串聯一肖特基二極體的新型cmos數字電路結構和串聯一工作于線性區的常開n mosfet的mos模擬電路結構。經spice及電路可靠性模擬軟體bert2
  14. On the following, on the basis of formulas given above, three kinds of effects due to ionosphere are presented : image shift due to group delay which was caused by the difference between the group velocity and the velocity of light in the ionosphere ; image distortion due to ionospheric dispersion which can create second phase error of lfm signals ; the last, the phase perturbation caused by the irregularities of the ionosphere can reduce the coherent length and affect azimuthal resolution

    文中主要研究了電離層的三種影響:信號經過電離層傳播的群延遲引起的成像偏移;電離層的色散給線性調頻信號帶來二次相位誤差,導致圖像退、失真;以及電離層的閃爍、湍流等不規則性引起的信號相位起伏。在此基礎上,比較分析了不同波段、帶寬條件下電離層的影響。
  15. In the second chapter we discuss the mass - defect in the schwarzshild field and r - n field, and if a = 0 the latter will reduce to the case in the former

    第二章詳細討論了史瓦西場中及r - n場中的質量虧損,且當= 0時,後者就會退為前者的情況。
  16. This presentation will describe a procedure to model probabilistically the deteriorating effect on the failure probability with time

    本講座將介紹一種能夠概率模擬破壞概率隨時間變的這類衰退的方法。
  17. The main contributions are included : 1. the polarimetric characteristics and their descriptions of electromagnetic wave are introduced. based on these, the depolarization effect of object is analyzed and the polarimetric characteristics of the clutter are described briefly, as well as its application in conventional radar

    論文主要工作如下: 1 .在給出電磁波的極特性及其表徵的基礎上,分析了雷達目標的退和雜波的極特性,簡述了極在傳統雷達中的用。
  18. ( 2 ) based on deterioration model of owerage bond stress of beam reinforcement accounting for effect of axial compression ration and number of displacement loops, and stress - strain relationship of the concrete in the joint core accounting for effects of both softening and confinement, the modified compression field theory was employed to simulate behavior of the joint core under loading reversals. analysis by means of the program jap on the tested specimens in this paper and those obtained from other researchers produced consistent results

    根據本文建立的考慮軸壓比和位移循環次數影響的梁筋平均粘結退模型和考慮軟、約束的核心區混凝土變關系,通過在試驗中得出的節點核心區混凝土、箍筋、節點正面、背面柱筋在反復荷載下的受力特點,利用斜壓場理論模擬節點核心區在反復受力過程中的受力狀態。
  19. And for analog applications by adding a normally - on nmosfet in series with the n - mosfet in an analog circuit respectively. according to spice3f5 and bert2. 0 simulation results, the substrate current of new structure cmos inverter is suppressed to about 50 % of its original value and good hot - carriers resistant behaviors are obtained without adding any extra delay

    0對倒相器的模擬結果表明:新型cmos數字電路結構結構使襯底電流降低約50 ,器件的熱載流子退化效應明顯改善而不會增加電路延遲;巳該電路結構中肖特叢一級管可在nmosfet漏極亙接製作肖特基金半接觸來方便地實現,工藝簡單又無須增加晶元而積。
  20. Synthesis of carbon nanotubes using alumina template and its thermal annealing effects

    碳納米管的氧鋁模板法合成及其退研究
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