退化電路 的英文怎麼說

中文拼音 [tuìhuàdiànlù]
退化電路 英文
degenerative circuit
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 退化 : become vestigial; degenerate; deteriorate; retrograde; devolution; retrogradation; retrogression;...
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Also, the degradations of n - mosfet and p - mosfet are compared and the increase of delay - time induced by device degradation is represented by introducing " time - index ", and the saturation effect and temperature characteristics of device degradation are described

    另外，比較討論了p溝和n溝mosfet的退化，對器件退化導致的電路延遲增加則引入了「時間因子」的概念來加以明確的表徵；對器件退化的飽和效應和溫度特性也作了分析概述。
  2. In order to investigate the effect of high - field hot - carrier on devices and circuits, the electrical stress experiment is carried out with 1. 2 n m, 1. 0 n m and 0. 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology. by using the fresh and degraded experiment data, bsim2 model parameters are extracted

    為了分析研究高場熱載流子效應對器件和電路特性可靠性的影響，採用自動測試與cad技術相結合的監測系統，對國內溝道長度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet進行了電應力退化實驗，並根據實驗結果提取了退化前後器件的bsim2模型參數。
  3. Finally, according to the mosfet ' s parameter degradation due to hot - carrier effects and different application environment of mos devices on analog and digital circuits, the circuit structures for hot - carrier immunity are proposed for digital applications by adding a schottky diode in series with the drain of the nmosfet suffered heavily from hot - carrier degradation.,

    即在受熱載流子退化效應較嚴重的n mosfet漏極串聯一肖特基二極體的新型cmos數字電路結構和串聯一工作于線性區的常開n mosfet的mos模擬電路結構。經spice及電路可靠性模擬軟體bert2
  4. Based on the change of electrical load, promptly monitor stop and run operation of capacitor to ensure effective watt factor on proper level

    根據分路用電負荷的變化，及時檢查電容器的投入和退出運行，保證有功功率因數維持在正常水平。
  5. Also, by using the hot - carrier immiunity analog circuit structure, the output resistance degradation caused by the hot - carrier degradation is deeply supressed and the small - dimensional effect can be improved shown by the spice 3f5 simulation results, and the gain degradation of a cmos o peration amplifer after 10 years operation decreases from 23 % to 10 % with this structure according to bert2. 0 simulation

    而串聯常開n mosfet的模擬電路結構可使n mosfet輸出電阻的退化大為減小同時還可改善器件小尺寸效應引起的輸出電阻下降：採用該結構的os運放與未採用的相比，其十年工作后增益的退化由23下降為10 。
  6. The degradation and lifetime model is deeply discussed, dynamic and static stress suffered by devices and circuits are compared and analyzed. a modified model for lc is proposed for better fitting the experimental data and the substrate current model parameters eerit and lc, degradation parameter h, m, n are extracted by the static stress experiment results

    詳細分析討論了mosfet的壽命與退化模型，並對電路中器件所受的動態應力與直流靜態電應力進行了分析比較：根據實驗結果改進了有效導電長度l _ c模型；應用直流電應力實驗數據進行了襯底電流模型中載流子速度飽和電子科技大學博士論文臨界電場e ； 、有效導電長度lc以及退化參數h 、 m和n的提取。
  7. Diffusion / oxidation furnace is a kind of very important equipment which is used in semiconductor process production line. it is applied in the manufacture process of the discrete semiconductor devices and integrated circuit which have diffusion, oxidation, annealing and alloying processing. it is also used in special temperature treatment of other material and is an auto - equipment which has the command of long time working, high precision and high stability

    擴散/氧化爐是半導體工藝生產線上非常重要的一種工藝設備，用於分立半導體器件、集成電路製造過程中各種擴散、氧化、退火及合金工藝，也適用於對其他材料的特殊溫度處理，是一種要求能長時間連續工作、高精度、高穩定性的自動控制設備。
  8. And for analog applications by adding a normally - on nmosfet in series with the n - mosfet in an analog circuit respectively. according to spice3f5 and bert2. 0 simulation results, the substrate current of new structure cmos inverter is suppressed to about 50 % of its original value and good hot - carriers resistant behaviors are obtained without adding any extra delay

    0對倒相器的模擬結果表明：新型cmos數字電路結構結構使襯底電流降低約50 ，器件的熱載流子退化效應明顯改善而不會增加電路延遲；巳該電路結構中肖特叢一級管可在nmosfet漏極亙接製作肖特基金半接觸來方便地實現，工藝簡單又無須增加晶元而積。
  9. This paper projects a utility subdividing drive system of step motor, which consists of digital control module, drive module and power module, it uses at89c52 single chip processor as the core, it realizes the external event or generates control signal by i / o interface, timer and external interruption, the system introduce pld device and isp technology to the design of phase sequencer, it simplified circuit and improved the anti - disturbing capability by using abel - hdl language, this system can realizes data memory, velocity digital control and led display, etc. this paper adopted firstly the single - chip technique to design control system, which replaced old complicated logic control circuit and simplified test process

    本文研究了一種實用的步進電機細分驅動系統，由數字控制模塊、驅動模塊和電源模塊組成，系統以at89c52單片機為核心，通過單片機的i o口、定時器計數器中斷來實現外部事件監控以及控制信號的產生，系統將可編程邏輯器件（ pld ）器件和在系統編程（ isp ）新技術引入到細分驅動環行分配器的設計，通過abel _ hdl語言編程實現硬體軟化設計和邏輯重構，大大簡化了電路，並提高了電路抗干擾能力。使系統實現參數存儲，速度數字控制，數碼顯示，進退刀控制等功能。
  10. Stochastic network can employ simulated annealing method to optimize parameters of equivalent circuits

    隨機網路可利用模擬退火演算法優化等效電路參數。
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