退火區 的英文怎麼說
中文拼音 [tuìhuǒqū]
退火區
英文
annealing region-
Zircaloy - 4 sheet, which was cold - worked followed by recrystallization annealing, exhibits longer lcf life in the rolling direction than that in the transverse direction, and the fact that difference in lcf life between both directions becomes larger as the range of plastic strain becomes lower can be attributed to the texture effect, p - solution treatment deteriorates the alloy ' s lcf property because the treatment lowers the average value of alloy ' s schmid factors, and the subsequent annealing - treatment in a - phase range has a impact on the lcf properties, i. e. the subsequent annealing - treatment at 500 ? for 1. 5h results in better property than that at 750 for 1. 5h, which comes mainly from the fact that the alloy annealled at 500 for 1. 5h has lower amount of the precipitate particles than the alloy annealled at 750 for 1. 5h
對于冷加工后經再結晶退火處理的zr - 4合金，軋制方向的低周疲勞壽命比橫向要大。隨著_ p的降低，兩個方向的低周疲勞壽命的差別相應增加，這是由於合金中存在織構的緣故。冷加工后經再結晶退火處理的zr - 4合金在固溶處理后，抗疲勞性能明顯降低，這主要是由於固溶處理降低了合金的schmid因子；固溶處理后在相區的退火對疲勞性能有影響，即500 1 . 5h退火的抗疲勞性能要優於750 1 . 5h退火，這主要與500 1 . 5h退火的合金中沉澱相粒子的數量較少有關。Abstract : in this paper, pesent the development and trends in chemi cal component controlling, hot rolling and coiling processing, ferritic hot rollin g, trip steel processing, cool rolling, annealing and surface quality controlling f or deep drawing sgeet steels are analyzed and discussed
文摘:分析討論了目前國內外在深沖用薄板生產中的成分控制、熱軋、捲曲工藝、鐵素體區軋制、 trip鋼生產、冷軋與退火工藝以及鋼板表面質量控制方面的新進展和趨勢Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation
結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。Application of the algorithm for different observed head data sets indicate that the model can be successfully applied for aquifer systems where data available may be sparse and with errors. calculated groundwater heads by identification results in fourteen parameter areas are fit for observed heads in field, and flowing filed is similar. the study demonstrates the effectiveness of the ga global optimization model for parameter identification, which is an important step towards real system simulation and effective planning and management of groundwater resources
通過算例研究，表明上述演算法可行，且rbf神經網路方法和退火遺傳演算法對地下水系統參數的識別效果都較好，而退火遺傳演算法較之標準的遺傳演算法具有更好的收斂性將演算法應用到北京市密懷順地區，在收集、分析研究區資料基礎上，建立了北京市密懷順平原區地下水模擬模型，並用遺傳演算法進行了地下水系統參數識別，在十四個分區情況下，計算水位與實際水位擬合的較好，各應力期末的計算與實測等水位線基本一致，表明該識別值較為合理。The visible optical absorption of the film increases with increasing annealing time, coating - annealing time and concentration of the starting solution
樣品的可見光區光吸收率隨著初始溶液濃度、退火時間、塗膜厚度的增加而增加。With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon
隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。The results of explosive welding specimen show that the interfaces formed by explosive welding present disciplinary and consecutive shape. there are no distinctiness diffused layers on the interfaces. after elevated temperature annealing, the interdiffused layers formed in interface of nb - 1zr and stainless steel
研究結果表明：對于nb - 1zr合金和不銹鋼爆炸焊接形成的結合區呈現規律的和連續的波浪形狀，無明顯擴散層；經高溫退火后的結合層形成一定厚度的由nb - 1zr和不銹鋼合金元素互擴散形成的擴散層。The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %
以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。An efficient implementation of this framework is presented, for segmenting two motions ( foreground and background ) using two frames. the expectation - maximization algorithm is used to determine the two motions and calculate the label probability for each edge. the best motion labeling for these regions is determined using simulated annealing
針對前景和背景兩種運動分割的情況，本文給出了一種基於貝葉斯分割框架的有效實現，它使用最大期望（ em ）演算法來估算邊緣的標定概率，並通過模擬退火演算法來完成這些分割區域的最佳運動標定。Under a unified frame, different despeckling sub - algorithms are designed to despeckle different kinds of regions : a modified acmap algorithm ( simulated annealing correlated neighborhood map despeckling algorithm ) is used to depress the speckle in homogeneous regions, and the macro structural information is introduced into the despeckling algorithm in heterogeneous regions to protect the structures
在統一的框架下，針對不同的描述模型的特點設計了相應的相干斑抑制方法。針對平穩區域設計了改進的acmap演算法（基於模擬退火和相關鄰域的最大后驗估計相干斑抑制演算法） ，針對非平穩區域將分割得到的宏觀結構信息引入到演算法中，有效的保護了宏觀結構性信息。With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。According to the rules and considerations which are based and taken into account in the practical work, this paper proposes a new model for distribution maintenance scheduling which intends to find the most economical maintenance schedule without violating any restrictions and also the paper makes a deep research of ga, sa and ts. by constructing two effective instructive rules which derive from the feature of distribution maintenance schedule and introducing ts into mutation operation of ga in the earlier generations, the proposed method improves the convergence of optimization and shortens the calculation time. the proposed model and method are applied to a practical system, and numerical results verify ' the correctness and validity of them
本文結合實際電力調度計劃工作中檢修計劃的制定原則和所要考慮的各種因素，抽象出適合配電網檢修計劃優化的數學模型：對遺傳演算法、模擬退火演算法以及禁忌搜索演算法等多種演算法進行了研究和分析比較，針對遺傳演算法的不足提出了通過對實際問題的分析抽象出一定規則指導演算法在解空間進行搜索和兩階段變異運算元兩項改進措施，並應用於配電網檢修計劃優化，編制了相應的應用軟體；應用該軟體對我國南方某地區供電局某月的檢修計劃進行優化的結果表明，本文所提出的模型和改進的優化方法是正確和有效的。First, based on comprehension analysis of the present study status on optimizing method to displacement back analysis in underground engineering home and abroad, intelligent optimizing method, which fits the features of underground engineering, has been developed by introducing annealing algorithm and genetic algorithm and improving them. second, according to practical features of nonlinear displacement for underground engineering, the mechanical model on back analysis to initial ground stress and mechanical parameters of surrounding rock mass in underground engineering is established, which is based on the measuring results of displacement of convergence in underground holes. while, by introducing finite element method and combining improved annealing algorithm and improved genetic - annealing algorithm, the theory and method of elastic - plastic displacement back analysis to surrounding rock in underground engineering has been founded
首先，本文在綜合分析國內外地下工程優化位移反分析方法研究現狀的基礎上，引進模擬退火與遺傳演算法，並對其進行改進，建立了適合於地下工程問題特點的智能優化演算法;其次，根據地下工程非線性特點，基於地下工程洞周收斂位移量測結果，建立了用於地下工程初始地應力與圍巖力學參數反演分析的力學模型，並引進有限元分析手段，結合改進模擬退火演算法與改進遺傳-模擬退火演算法，分別建立了基於這兩種智能優化演算法的地下工程圍巖彈塑性位移反分析理論與方法，並開發了相應的分析計算程序，為地下工程圍巖穩定性與開挖順序優化分析奠定了基礎;然後，在上述基礎上，根據地下工程開挖施工順序優化設計的特點，建立了基於圍巖塑性區面積的地下工程開挖施工順序優化分析模型，基於改進模擬退火演算法與改進遺傳-模擬退火演算法建立了地下工程開挖施工順序優化分析方法，並開發了相應的分析計算程序;最後，將上述分析計算程序用於工程實例分析，探討了其應用方法，證明了該文研究成果的合理性和可靠性。The paper exploits then method of combining the simulated annealing algorithm with genetic algorithm for the question and designs the coding way which based on ordinal characters, builds up fitness function on the basis of penalty function, adopts the basal technology, such as crossover, mutation etc. to deal with the model and put forward adjustable algorithms for trains occupying time sets
將模擬退火演算法和演化演算法混合起來運用於該問題，設計有序的字元串編碼方法，構造了基於罰函數的適應度函數，採用交叉和變異等技術，求解該模型。並提出了車列佔用時區調整的相關演算法。First, the current optical system construction ' s optimization algorithms are based on the just optical system ' s preliminary construction which designers have selected. optical system program can not automatically change the optical elements ' nember. so that optical system design ' s intelligentized degree is not high. now this paper applies the genetic algorithms to lens design and shows that the genetic algorithms can effectively work in automatically changing the optical elements ' nember. next, this pape present a new computer design method that applies the genetic - simulated annealing algorithms to directly design the binary optical element
首先，由於現有的光學系統結構設計的優化演算法都是在選定了初始光學結構的基礎上，只對光學結構參數進行優化選擇，在優化過程中不能夠自動改變光學面數，導致光學系統設計的智能化程度還不是很高，採用遺傳演算法，實現了光學面的自動增減；其次，區別于傳統的二元光學設計方法，為避免其量化臺階數過大導致的成本及加工復雜度的增加，提出了運用混合優化策略遺傳-模擬退火演算法直接設計二元光學元件的新的計算機方法。The calculation determined the main point defect under different cd pressure and the reaction enthalpies and entropies and the equilibrium constants in ( cd, zn ) te according to the quasi - chemical equations written for cdte sublattice. also the recipe of two - zone annealing process for cd0
根據計算結果，確定了不同氣氛條件下cd _ （ 1 - x ） zn _ xte （ x = 0 . 05 ）晶體中佔主要地位的點缺陷和相關偽化學反應式的反應焓、反應熵及平衡常數，給出了兩溫區本徵退火的具體參數。As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped
眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。At present, local morphology was used to discriminate ferroelectric phase area and non - ferroelectric phase area, but once morphology variation of phase transformation was tiny, the ferroelectric phase area and non - ferroelectric phase area was hard to discriminate only from morphology view. however, the introduction of sndm can overcome this limitation, and visualize the investigation of annealing process. combining x - ray diffraction, atomic force microscopy ( afm ) with sndm, the phase transformation process of pzt thin films with different annealing time and of plt films with different annealing temperature were studied, respectively
結合原子力顯微鏡（ afm ） 、 sndm 、 x射線衍射（ xrd ） ，通過對微區形貌、電容分佈變化和鐵電薄膜結晶情況的表徵和分析，研究了pzt鐵電薄膜和plt鐵電薄膜的晶化過程，分析了不同退火時間對pzt鐵電薄膜微結構，不同退火溫度對plt薄膜的微結構和微區極化分佈的影響，有效克服僅依據形貌特徵判定鐵電相與非鐵電相的局限性，實現鐵電薄膜微區晶化過程的可視化分析，豐富了晶化過程的研究方法。Analyses showed that the effect of heat treatment is remarkable to 304 stainless steel fibers. and a new martensitic phases formed, and ms increased during annealing at 180c ; annealing above 180c decreased the ms. after annealed in the range of 380c ~ 440 c, the he increased and the product ( mr hc ) improved. it was also shown that annealing affected the mechanical properties of 316l ss fibers obviously
304不銹鋼纖維在180附近退火處理其ms略增加，其內部相變與一般的304不銹鋼體材料存在差別； 380 440區間退火處理，其矯頑力急劇增加、磁能積參數配合比較好；退火熱處理對316l不銹鋼纖維的力學性能作用明顯。Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films, also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer
薄膜區：專門沉積「介電層」 ， 「金屬層」等導電或不導電薄膜的區域，併兼做晶圓表面器件之平坦化及高（低）溫快速熱退火製程。分享友人