退火結構 的英文怎麼說

中文拼音 [tuìhuǒjiēgòu]
退火結構 英文
annealed texture
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 退火 : [冶金學] anneal; annealing; back-out
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. The procedure functions in the compare between partial image of dynamic collection and corresponding image of the airscape. in chapter 5, basing on the analysis of correlative theory of digital image, we introduce the improved fasted - down algorithm and simulative anneal algorithm, which applies to nn calculation, an d bring forward the unique and effective means, correlative original value evaluation. basing on the combination of correlative arithmetic, a stable, high - speed and exact correlative arithmetic is formed, which makes it possible to apply computer vision detection of single - needle quilting in industrial production

    本文展開研究並取得一定成效：構建了基於pci總線的微機實時圖像採集系統；在採集的布料總圖（鳥瞰圖）的基礎上，通過數字圖像的數字濾波、圖像增強、邊緣檢測等處理，提取布料圖像的邊緣，對輪廓的矢量化的象素點進行搜索，得到相應的圖案矢量圖，從而確定絎縫的加工軌跡，生成加工指令；在進給加工過程中，主計算機對動態局部圖像與總圖（鳥瞰圖）的對應部分進行圖像相關的匹配計算，應用數字圖像理論，結合神經網路計算的改進最速下降法和模擬退火演算法，提出獨特而有效的相關迭代初始值賦值方法，形成穩定、高速和準確的相關運算，實現單針絎縫視覺測量和自動控制。
  2. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  3. We also find that the pinning phenomenon gradually disappear with thicker single layer of the [ pt / mn ] n films, and firstly prepared permalloy before the deposition of [ pt / mn ] n multiplayer more easily form anti - ferromagnetic structure than another caseo maybe this is a good way to shorten the annealing time

    我們還發現隨著單層厚度的增加釘扎現象逐漸消失，而且先沉積nife層，后沉積pt / mn多層膜的情形更容易獲得反鐵磁結構。這可能是縮短退火時間的一種好方法。
  4. By analyzing the microstructure of as - cast alloys with different surplus of samarium added, the optimum surplus of samarium is decided. by comparing the microstructure of the alloys annealed for different time, the ideal and economical annealing time is confirmed. the microstructure and phase composition of alloys during the whole preparation of sm2fe17nx are analyzed using the scanning electron micrograph with energy - dispersive x - ray analysis and x - ray diffraction patterns

    本論文首先就熔煉工藝參數對鑄態組織微結構的影響進行了探討，並制定出一套較為合適的熔煉工藝；通過對不同釤加入量的鑄態組織微觀結構的觀察分析，確定了原料配置過程中釤的最佳補償量；通過對採用不同退火時間的合金組織進行比較，確定了理想、經濟的退火時間；同時還利用掃描電子顯微圖像和x射線衍射圖譜，比較了整個制備過程中，試樣微結構和相組成的變化情況。
  5. Zircaloy - 4 sheet, which was cold - worked followed by recrystallization annealing, exhibits longer lcf life in the rolling direction than that in the transverse direction, and the fact that difference in lcf life between both directions becomes larger as the range of plastic strain becomes lower can be attributed to the texture effect, p - solution treatment deteriorates the alloy ' s lcf property because the treatment lowers the average value of alloy ' s schmid factors, and the subsequent annealing - treatment in a - phase range has a impact on the lcf properties, i. e. the subsequent annealing - treatment at 500 ? for 1. 5h results in better property than that at 750 for 1. 5h, which comes mainly from the fact that the alloy annealled at 500 for 1. 5h has lower amount of the precipitate particles than the alloy annealled at 750 for 1. 5h

    對于冷加工后經再結晶退火處理的zr - 4合金，軋制方向的低周疲勞壽命比橫向要大。隨著_ p的降低，兩個方向的低周疲勞壽命的差別相應增加，這是由於合金中存在織構的緣故。冷加工后經再結晶退火處理的zr - 4合金在固溶處理后，抗疲勞性能明顯降低，這主要是由於固溶處理降低了合金的schmid因子；固溶處理后在相區的退火對疲勞性能有影響，即500 1 . 5h退火的抗疲勞性能要優於750 1 . 5h退火，這主要與500 1 . 5h退火的合金中沉澱相粒子的數量較少有關。
  6. The nano - crystals of si are found embedded in the amorphous matrix in the unannealed sample. the crystallinity of the films is increased with raising deposit temperature

    研究發現，未經退火處理的薄膜是納米硅品粒鑲嵌于非晶介質中，並與氧化硅晶粒形成復合的特殊結構。
  7. ( 3 ) the analysis results of xrd, sem indicated that the ni - pd coating formed a fcc structure. after annealing at 200 ?, a little amount of pdsi was precipitated in the coating. the surface image of ni - pd coating was utricle

    （ 3 ）利用xrd 、 sem 、 aes等手段對ni - pd合金鍍層的結構、表面形貌、成分進行了分析，結果表明ni - pd合金鍍層形成了面心立方的固溶體結構，鍍層經過200快速退火后，有少量pd的硅化物（ pdsi ）析出。
  8. High alloy carburizing steel and 20crmnti structure steel etc. they also can be used for oil - quenching, gas - quenching and annealing of tool and mould steel, all kinds of steels used in precision bearing, parts of oil - pump, nozzle and precision machine

    等結構鋼的滲碳及滲碳后的淬火，工模具鋼精密軸承油泵油嘴機械件精密機器零件等各種鋼的氣淬退火等。
  9. Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )

    當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。
  10. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  11. Based on analyzing deeply the basal principle and the system structure of the multi - sensors information fusion technology, and according to the model of feature level fusion, the achieving method of fire detection system based on simulated annealing feature level fusion is presented. this method that searches first - rank ‘ feature fusion coefficient ’ through simulated annealing arithmetic can improve the validity property and demote the mis - warning rate

    在深入討論了多傳感器信息融合技術的基本原理及體系結構的基礎上根據特徵層融合的模型提出了基於模擬退火的特徵層融合火災探測系統實現方法，使用模擬退火演算法搜索最佳的「特徵融合系數」 ，從而提高火災探測的正確性，降低誤報率。
  12. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  13. According to the results of ramman and xrd spectrum, the structural and ramman characteristics of 5 1014cm - 2 dy ions implanted cdte films deposited on ceramic substrate have been studied, and the function of the thermal annealing have been discussed

    採用顯微喇曼譜結合xrd ，研究了5 1014cm - 2dy離子注入陶瓷基底上沉積的cdte薄膜的結構和喇曼特性，並討論了離子注入后的退火效應。
  14. And then, we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks

    然後，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結構情況。
  15. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  16. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  17. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  18. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  19. Based on testing repeatedly, the structure of mould is further optimized and the technological parameter is further optimum seed, a reasonable lubricating way and annealing mean is lain down

    通過試驗研究，進一步優化了模具結構，優選了工藝參數，制定了合理的退火規范和潤滑方式。
  20. The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely

    （ 2 ）常溫下制備的tio _ 2薄膜是無定型的， 300濺射薄膜表面有緻密的晶粒，熱處理溫度升高，晶粒變大，晶相開始轉化， 800退火tio _ 2完全轉化為金紅石結構。
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