透明等離子體 的英文怎麼說
中文拼音 [tòumíngděnglízitǐ]
透明等離子體
英文
transparent piston- 透 : Ⅰ動詞1 (滲透; 穿透) penetrate; pass [seep] through 2 (暗地裡告訴) tell secretly; let out; lea...
- 明 : Ⅰ形容詞1 (明亮) bright; brilliant; light 2 (明白;清楚) clear; distinct 3 (公開;顯露在外;不隱...
- 等 : Ⅰ量詞1 (等級) class; grade; rank 2 (種; 類) kind; sort; type Ⅱ形容詞(程度或數量上相同) equa...
- 離 : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
- 子 : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
- 體 : 體構詞成分。
- 透明 : transparent; vifrification; hyaline; diaphaneity; lucency
- 離子 : [物理學] ion
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The results of the uni - factor experiments and perpendicular experiments show their best mechanic synthesizing craft as followed : nvp ( 10 % wt ), kh570 ( 20 % wt ), hema ( 70 % wt ), initiator ( 0. 2 % wt ), crosslinker ( 20 % wt ), reacting 20 hours under 80 c. the factors which influenced organic silicon modified pvp hydrogel soft contact lens material ' s swelling capabilities were researched, which included temperature, monomer content, ion concentration etc. the experiments showed the equation swelling content ewc improved with the increase of nw, droped with the increase of kh570 and ion concentration, improved then droped with the raise of temperature, and hydrogels got the least ewc at 45 c. experiment carried on todiscuss water dehydration mechanism of organic silicon modified pvp hydrogel soft contact lens materials, which showed dehydration process could be divided into evaporating stage and diffusing stage
正交實驗結果表明, nvp ? hema ? kh570共聚物的機械性能最佳時,其合成工藝條件為: nvp用量10 (質量百分含量,下同) , kh570用量20 , hema用量70 ,引發劑aibn用量0 . 2 ,交聯劑nmba用量0 . 2 ,反應溫度為80 ,反應時間16h 。討論了單體配比、溶脹溫度、離子濃度等因素對有機硅改性pvp水凝膠軟接觸透鏡材料溶脹性能的影響。實驗得出:水凝膠材料的平衡溶脹度ewc隨單體nvp含量的增加而增大, ewc隨kh570用量的增加而減小,隨離子濃度的增大而略微降低,隨溶脹溫度的升高先稍微下降後有所提高, 45時平衡含水量最低。Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, infrared reflectance and low d. c. resistivity ) to ito films, but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito
Al摻雜的zno薄膜,由於具有與ito ( in _ 2o _ 3中適量摻雜sn )薄膜相比擬的對可見光的高透過率和高電導,又因其在氫等離子體中的高穩定性等優點,已成為替代ito透明導電薄膜的研究熱點。In recent years, al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, low electrical resistivity ) to ito films, but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito
近年來,由於al摻雜的zno薄膜( azo )具有與ito薄膜相比擬的光電性能(可見光區高透射率和低電阻率) ,又因其價格較低以及在氫等離子體中的高穩定性等優點,已經成為替代昂貴的ito薄膜的首選材料和當前透明導電薄膜領域的研究熱點之一。The equations which are used in the radiation hydrodynamic model include the hydrodynamic equation of plasma, the absorption equation of laser, non - lte electron occupation probability equations, electron ion and photon energy equations ( three - temperature equations ), and the state equation of matter and so on
考慮的方程有:等離子體流體力學方程組,激光吸收方程,非局域熱動平衡電離下電子占據概率的速率方程組,電子離子的能量守恆方程組和光子的能量輸運方程(三溫方程組) ,關于元素不透明度的方程,以及描述物質狀態的方程等。By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly
本文利用mocvd技術,採用各種對si襯底處理的方法,如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究,通過x射線衍射技術( xrd ) 、光致發光技術( pl ) 、掃描電子顯微術( sem ) 、透射電子顯微術( tem )等檢測,並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析,發現外延晶體的生長質量得到了明顯提高。Abstract : a laser damage facilities, which has mm size spot and operates in tem00 mode , were achieved. in order to know the reasons of laser damage, the laser energy density was controlled near the damage threshold of the oxide thin films. according to the examined near - threshold damage morphology, the damage mechanisms of the optical coatings can be divided into two types. one was caused by melting of the coating materials, another by exploding, induced with the inner stress of the film. the plasma generated was an important reason to expand the damage area
文摘:採用毫米量級大光斑的近單模的激光器,控制入射薄膜表面的激光能量,獲得了幾種常見單層膜和增透膜的損傷形貌,實驗結果表明,薄膜的損傷可區分為熔化型和應力型兩種,薄膜表面等離子體對損傷斑點的擴大有重要作用。The testing results shows that the grating has a very well antireflective characteristic, and the values of testing parameters approximately equals to the designed parameters ". it indicates that the plasma - assisted etching method is very valid to fabricate deep grating
測量結果發現該光柵具有良好的增透特性,測得的光柵參數和理論設計的參數基本一致,說明等離子體輔助刻蝕是製作深光柵的有效方法。分享友人