過度摻雜 的英文怎麼說

中文拼音 [guòdùchānzá]
過度摻雜 英文
over-doped
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 過度 : excessive; over; undue; ana-; hyper-
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. In this paper, oxid crystals were synthesized by the hydrothermal method, and the effects of the hydrothermal condition on shape and quality of crystal were studied by changing experimental temperature and mineralizer. on the base of these works the blue sapphire dopped with fe, ti and sapphire dopped with ti were synthesized. meantime, the effects of ti, fe - dopped on sapphire and what lead to the blue of sapphire were studied

    本文採用水熱法合成了- al _ 2o _ 3和zno晶體，通過改變溫度和礦化劑條件研究了水熱條件下溫度和礦化劑對- al _ 2o _ 3和zno晶體合成的影響；在此基礎上通過摻雜致色元素，合成了藍色藍寶石、鈦藍寶石，並研究了fe 、 ti等致色離子對藍寶石晶體界面形態和質量的影響，分析了藍寶石的致色原因。
  2. Some cubic perovskites are good cases in point such as srtio3 and ktao3. experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration, the impurity induced ferroe lectric phase transition occurs

    Srtio _ 3和ktao _ 3是典型的量子順電體，實驗表明當兩者分別摻雜ba ~ （ 2 + ）和li ~ +且雜質濃度超過各自的臨界濃度時，順電相不再穩定，出現由雜質導致的鐵電相變。
  3. Begin with the comparation of two widely used methods producing the strontium titanate, the oxalate decomposition method shows its advantage hi the microstructure and future performance. the effect of caco3 is studied, and so is the effect of the donor dopant, such as nb2o5, y2o3 and la2o3. the dopant of tio2 is also considered, which involve ti / sr ratio, sintering temperature, oxygen partial pressure, donor dopant, grain growth and future electric performance

    從對比草酸鹽分解法和固相合成法這兩種制備srtio _ 3主晶相的方法開始，在予合成料的制備過程中分析了施主nb _ 2o _ 5 、 y _ 2o _ 3 、 la _ 2o _ 3以及caco _ 3所產生的影響；在tio _ 2摻雜的問題上，綜合考慮了ti / sr比、燒結溫度、氧分壓、施主摻雜、晶粒的微觀生長與成瓷后的元件宏觀電性能等之間的相互關系。
  4. 1 、 through the theoretical analysis and the medici simulation, according to the design directive, the structural parameters are designed comprehensively, including the dopant concentration and the depth of the emitter, the base dopant concentration and the depth ( especially the ge ratio ), the dopant concentration and the depth of the collector

    主要工作是: 1 、通過理論分析和medici模擬，綜合設計得出符合設計指標的結構參數，主要包括:發射區的摻雜濃度和厚度?基區的摻雜濃度和厚度及基區中ge的組分比?集電區的摻雜濃度和厚度。
  5. It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

    通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。
  6. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。
  7. The influence on the magnetism and the electron spin resonance ( esr ) over a wide range of composition and temperature have been studied systematically. an obvious symmetric esr signal with a lorentzian lineshape in the paramagnetic regime is observed

    本論文邊過選擇磁性離子替代，著眼點在於討論衫雜離子的磁性效應，實驗發現摻雜使樣品的磁結構發生變化，且在低溫時出現磁化強度峰，用摻雜離子自旋旋轉對此進行了解釋。
  8. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  9. The thermal return reaction of hg ( hdz ) 2 doped in pmma film in the photochromic process follows second - order kinetics from ambient to 65

    摘要雙硫腙汞絡合物在摻雜的pmma膜中的熱回復反應在不同溫度下遵循二級反應動力學過程，其光致變色反應機理應為雙分子過程，即分子間的氫轉移過程。
  10. By calculated judd - ofelt parameters of the npre - 1 glass and luminescence dynamics equation, the author has get the changing curve about light intensity near 1540nm with the increase of er doped concentration. it was observed that the light intensity is the strongest when er doped concentration is 20mol % and the concentration - quenching phenomenon takes place after the concentration is bigger than 20mol %

    5 ）通過建立發光動力學方程，利用j - o計算得到的參數，得出npre - 1樣品1540nm處發光強度隨er3 +離子摻雜濃度的變化規律，看到er3 +離子摻雜mol濃度為20 %時發光最強，大於這個濃度后就發生了濃度猝滅效應。
  11. But there ' s a gotcha : its disappearance in overdoped materials that nonetheless still superconduct

    不過有個問題：它在過度摻雜但仍具有超導性的材料中消失了。
  12. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  13. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  14. It is proposed that the higher dose condition creates more hot carriers but the lower sensitivity to hot carrier effect. therefore, the optimum dose for reliability is determined from the trade - off between the above two aspects. finally, a simple model is proposed and discussed

    本文還深入研究了sde區摻雜濃度對器件熱載流子可靠性的影響，指出濃度的提高雖然會產生更多的熱載流子，但由於其對熱載流子損傷的敏感度降低，因此將存在一種折衷，最後通過一個簡單的寄生電阻模型，對摻雜濃度提高后，器件對熱載流子損傷敏感度降低的現象做出了很好的解釋。
  15. The highest jc of 8. 64 105a / cm2 at 10k, 0t was obtained in the un - doped mgb2 / fe tape sintered at 800 for 15 minutes by sps. it is worthwhile to note that the jc value was decreased much slowly in this sample with the increase of the testing temperature and magnetic field. for example, the jc was 5. 97 105a / cm2 at 20k, 0t, and at 20k, 3t the jc value was

    從目前試驗結果看，摻雜量為5mol %時線材性能較好，樣品的臨界電流密度在自場下達到6 105a / cm2 ，並且sic摻雜改進了樣品在高場下的jc值，在4t時，摻雜線材樣品的臨界電流密度大大超過未摻雜樣品，這是由於sic的摻入生成了細小均勻的mg2si ，分佈在晶粒
  16. Graded doping is adopted in both sides of the junction ( double graded doping ). this results in a strong ( drift ) electric field throughout the whole active layer. this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased

    漂移場的形成是通過mbe技術，在結的兩側都採用梯度摻雜（即雙梯度摻雜） ，從而在整個有源層都建立起一個強的（漂移）電場，有效地利用載流子在電場作用下的漂移作用收集少數載流子，使得總內量子效率得以提高。
  17. In this design, the double graded doping solar cell accumulates the minority carriers with the drift field, which is located at the whole graded space. this means that the accumulation of minority carriers doesn ’ t depend on the above conditions

    採用與眾不同的通過在p區和n區都採用梯度摻雜這樣一個所謂雙梯度摻雜，在整個有源層獲得高達104v / cm的漂移電場。
  18. 3. pani nanofibrils were synthesized for the first time by using chemical oxidative polymerization under hydrothermal conditions. the effects of concentration of aniline, doped acid and the reaction time on the morphology of pani were researched

    3 .在水熱條件下通過化學直接氧化的方法得到聚苯胺納米纖維，討論了苯胺的濃度，摻雜酸和濃度以及水熱時間對聚苯胺納米纖維生成的影響。
  19. The transmittance of zno thin films with suitable doping molar ratio is above 80 % in the uv - visible range. the films obtained in this work show to have a high c - axis orientation, smooth and smooth morphology, high electrical resisitivity and high transparency, which can meet the requirements for piezo - electrical devices

    本論文通過對li ： zno以及（ mg人中znot4膜的分析研究，深入地探討了旋塗方式、熱處理溫度、摻雜濃度和熱處理方式等對zno膜結晶取向的影響以及電學和光學性能的影響關系等，對z ； 。
  20. This thesis focuses on the study of the layered lithium nickel - based oxides as catho de materials lithium - ion batteries, the main aspects follow : 1 study on the synthesis and properties of linixco1 - xo2 by the sol - gel method compared with solid - state method, sol - gel method enjoys the advantage of lower calcining temperature and small uniform particle size of products. after the xrd measurement, it was shown that the single - phase layered compound can be prepared in sintering temperature of 750 for 6 ~ 8 hours. the sintering temperature, the properties and the amounts of doping materials can all affect the product ' s phase, and its structure ( lattice parameter, crystal phase distance )

    本論文的研究工作主要集中在作為鋰離子電池正極材料的層狀鋰鎳基氧化物上，包括以下幾個方面： 1溶膠凝膠法（ sol - gel ）合成lini _ xco _ （ 1 - x ） o _ 2的研究與固相合成法相比，溶膠凝膠法合成lini _ xco _ （ 1 - x ） o _ 2煅燒溫度低，產物顆粒均勻一致，經過xrd的測試過后，結果表明750下燒結6 8小時，即可得到單相產物；燒結溫度，摻雜劑的種類及摻雜劑量均對產物物相的形成產生影響，並對產物的結構產生影響。
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