過度退火 的英文怎麼說

中文拼音 [guòdùtuìhuǒ]
過度退火 英文
overannealed
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 過度 : excessive; over; undue; ana-; hyper-
  • 退火 : [冶金學] anneal; annealing; back-out
  1. The degree of crystallinity can be increased by annealing in an inert atmosphere.

    結晶度可通過在惰性氣體中的退火處理來提高。
  2. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  3. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  4. This equipment is the key of producing arc glass and laminated glass of shower bath room. it lets the flat glass changing its arc shape by drying, bending and annealing

    本設備是生產汽車弧形、沐浴房夾層玻璃製品的關鍵設備。通過對平板玻璃的烘彎、退火，使之彎曲成玻璃製品所需要的各種弧度和形狀。
  5. Due to high - thermal stability and independent of impurities dj - center is argued to originate from antisite or antisite complex. furthermore, the ltpl measurements have been taken on as - irradiated and postannealed p - type 6h - sjc, l ; lines related to dj - center were not observed with sample after postannealing at 1500 ?, the observation of a series of high intensity spectra which may mask the d1 - center due to the recombination of the d - a pairs

    本文還對經幅照的p -型6h - sic的幅照退火特性進行了研究，在經過1500後退火的樣品中沒有觀察到d _ i - center ，這可能是由於d _ i - center被實驗中觀察到的源於d - a對輻射復合的高強度的譜峰所掩蓋。
  6. High deposit temperature leads to transmission falling of the unannealed films. but the average transmission of sample deposited at 500 is higher than that at 450

    未經退火的薄膜透過率隨沉積溫度升高而呈現下降的趨勢，但500樣品比450的平均透過率高。
  7. After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged

    相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后，薄膜的平均透過率和平均反射率都比退火前下降，光學能隙變大。
  8. In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time

    在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。
  9. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  10. The determination of crossover possibility and mutation possibility is shown by experiments. the parameters of cooling schedule for simulating algorithm is also anal

    對模擬退火演算法用於排樣問題求解時的關鍵參數一一冷卻進度表的確定，通過實驗進行了分析。
  11. By making use of simulated annealing algorithm with memory, and determining a set of effective cooling schedule, the thesis solves this complex and special knapsack problem successfully

    本文應用帶記憶功能的模擬退火演算法，結合理論分析和經驗法則，通過大量試驗確定了一組有效的冷卻進度表參數，成功地解決了這個復雜而特殊的背包問題。
  12. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  13. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。
  14. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  15. Cold rolled, bright annealed and skin - passed, the product has excellent brightness and good reflexivi ty like mirror, used for lectrical appliances, mirror, kitch en apparatus, ornament materials etc

    經冷軋后施以光亮退火，並經過平整得到的產品。表面光澤度極好，有很高的反射率。如同鏡面的表面。用於家電產品、鏡子、廚房設備、裝飾材料等。
  16. And then, we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks

    然後，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結構情況。
  17. However, te - rich phases and point defects with high concentration were found locally. not only the vapor - solid equilibrium but also the vapor - liquid - solid equilibrium should be considered for the annealing of the crystals with te - rich phases. by analyzing the phase diagrams of cd - te and p - t plot of cd1 - xznxte ( x = 0. 04 ), it was concluded that for the purpose of rem

    本文通過仔細分析cd . te二元相圖和cd卜龍znxte （ x = 0 . 04 ）的p一t相圖，認為為了去除富te相，獲得穩定的電學性能，退火時晶片溫度應小於115ok ，氣氛環境的總壓力應小於pcs （對cdte ， pc洶
  18. In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films

    在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
  19. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  20. Based on the heating treatment control system of a spring steel - wire production line in a factory, hubei province, the paper deals with the design of fully automatically monitoring system across its manufacturing process. through research of parameters of temperature control during the period of heating, annealing and tempering in steel wire manufacturing process, the corresponding composite intelligence fuzzy controller is designed. in light with the way of fast heating, a composite intelligent fuzzy controller combined with on - off control & pi control is set up

    本文以湖北某鋼絲繩廠彈簧鋼絲熱處理生產線控制系統為依託，論述了整個生產過程的監控系統的設計，通過對該類鋼絲生產中的快速加熱過程、退火、回火等過程中的溫度控制參數的研究，設計了相應的智能型復合模糊控制器，根據快速加熱過程的實現方式，對于快速反應的被控對象，給出了以模糊控制為基礎的結合開關控制、 pi控制的快速升溫，且不超調的一種智能型復合模糊控制器，對于退火、回火等工藝過程，採用電加熱方式，該類工藝過程作為控制對象屬于具有純滯后的大慣性系統，作者設計出模型預測自適應模糊控制器，並對所設計的控制器進行計算機模擬實驗，取得了滿意的效果。
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