過氧化鋅 的英文怎麼說

中文拼音 [guòyǎnghuàxīn]
過氧化鋅 英文
zinc peroxide
  • : 過Ⅰ動詞[口語] (超越) go beyond the limit; undue; excessiveⅡ名詞(姓氏) a surname
  • : 名詞[化學] (氣體元素) oxygen (o)
  • : 名詞[化學] (金屬元素) zinc (zn)
  • 氧化鋅 : zinc oxide; outmine
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通用等離子體對硅襯底表面進行清洗和鈍兩步處理,解決硅襯底表面的層和界面電荷平衡問題,制備出了高質量的薄膜材料,找到了一條獲得了高質量的薄膜的新途徑。
  2. Studies of the protection of zinc on peroxidation induced by microwave

    對微波損傷的防護作用的實驗研究
  3. Objective to study the effect of zinc - oxide phosphorate base on preventing hydrogen peroxide leakage in intracoronal bleaching

    摘要目的研究髓室內漂白時,磷酸水門汀基對抗氫滲漏的作用。
  4. High voltage shunt capacitor installation is comp - rised of capacitor cabinets or steel racks capacitor, special fuses for capacitor overload protection, capaci - tor discharge device, air - cored reactor which is applied to restrain surge current and high frequency harmonic, zno arrester without gaps for overvoltage - limiting and high voltage vacuum switch etc. capacitor cabinet is

    高壓並聯電容器成套裝置主要由電容器櫃或鋼架電容器電容器負荷保護專用熔斷器放電裝置專用放電線圈或電壓互感器,抑制涌流限制高次諧波的空芯電抗器和限制電壓的無間隙避雷器及高壓真空開關
  5. With the increace of zn stress, the content of chlorophyll, superoxide dismutase ( sod ) activity and soluble protein content dropped significantly, peroxidase ( pod ) and catalase ( cat ) activities rised at first and lowered later, and malonyl dialdehyde ( mda ) content increased drastically

    脅迫程度的增大,葉綠素含量、 sod (超物歧酶)活性和可溶性蛋白含量呈下降趨勢;而pod (物酶)和cat (氫酶)活性則先升后降; mda (丙二醛)含量上升。
  6. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的薄膜,光致發光譜的半高寬為94mev ,通變溫實驗得到激子束縛能為59mev ,表明退火程提高了薄膜的質量。
  7. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對( 100 )單晶硅及( 110 )單晶硅、多晶硅薄膜、干薄膜、濕薄膜、 lto薄膜、標準氮硅薄膜、低應力氮硅薄膜、氮鋁薄膜、薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入程中觀測到的兩個力學相的變
  8. Results placement of a zinc oxide phosphorat protective base at cej level decreased hydrogen peroxide. penetration dramatically

    結果漂白前平齊釉牙骨質界水平制備磷酸水門汀基,氫漏量顯著減少。
  9. To achieve accurate detection of surface potential, the measurement of the contact potential difference of the zno / si step was also carried out. polarization - related surface properties of ferroelectric thin films were investigated by kelvin probe force microscopy ( kpfm ), leading to the discovery of asymmetric charge writing on the surface of pb ( zr _ ( 0. 55 ) ti _ ( 0. 45 ) ) o _ 3 ( pzt ) thin film

    為了優儀器的檢測靈敏度和穩定性,選用薄膜上的zno / si臺階作為測試對象,檢測了zno / si的接觸電勢差;通改變儀器系統參數,發現針尖-樣品距離和掃描速度對接觸電勢差的檢測結果影響顯著。
  10. In this article the chelating precipitation method and the converting precipitation method were chosed to synthesis zno nanoparticles on the basis of the theory of synthesis of nanoparticles by precipitation. uniform and dispersed zno nanoparticles were prepared by the two methods because zn2 + of conformation crystal was flee slowly and the supersaturation was well controlled. the problem which zno nanoparticles are wide size and agglomerative was solved

    本文根據均相沉澱法合成納米粒子的原理,採用絡合沉澱法和沉澱轉法合成納米。這兩種方法利用溶液中的構晶陽離子zn ~ ( 2 + ) ,緩慢地釋放出來,有效地控制了溶液中的飽和度,可以得到粒徑均勻、分散的納米,解決現有制備工藝中納米粒徑分佈寬、易團聚的問題。
  11. The shorter the interval between the two pulses of the current wave, the fewer strikes the varistors can endure. at the same time, the dc ljima changes fast - slowly - fast alone with the experiment continuing. microstructual disorder, such as variations in the height of the electrostatic potential at grain boundaries and electrode protrusions into the zinc oxide varistors, causes substantial temperature rise in a microscopic region around the defect and is the source for failure

    雷電的多重閃擊對雷電電壓保護器件的影響更加嚴重,本文首次採用不同間歇時間雙脈沖電流沖擊對電阻進行了多次試驗,試驗表明:電阻在雙脈沖電流沖擊下更容易出現老破壞現象,間歇時間越短,電阻能耐受的沖擊次數越少;此外,直流u _ ( 1ma )值隨沖擊次數的增加具有快一慢一快的下降程。
  12. High voltage shunt capacitor installation is comprised of capacitor cabinets or steel racks capacitor, spe - cial fuses for capacitor overload protection, capacitor discharge device, air - cored reactor which is applied to restrain surge current and high freq. harmonic, zno arrester without gaps for overvolage - limiting and high voltage vacuum switch etc. capacitor cabinet is made of highquality cold - rolling steel plate

    高壓並聯電容器成套裝置主要由電容器櫃或鋼架電容器電容器負荷保護專用熔斷器放電裝置抑制涌流限制高次諧波的空芯電抗器和限制電壓的無間隙避雷器及高壓真空開關等設備組成。
  13. The results of the study on the processes of precipitation and the followed calcination indicated that the shape and size of the precursor influenced the product obviously. the precursors with shapes of bar or lamellar were obtained by controlling the reaction conditions, and accordingly, the product of nano - zno with different shape and size could be obtained

    對該法的沉澱反應和焙燒反應進行了研究,通控制沉澱反應的工藝參數,可以得到不同尺寸的條狀和片狀前驅物,並對其進行了研究和分析;再經對焙燒反應參數的調控,可以得到不同形態和尺寸的納米級,如球狀、網狀和棒狀。
  14. The results showed that the precursor played an important role on the products and the calcination process had directly influenced on the quality and the shape of the products. the middle infrared, ultraviolet - visible light absorption behaviors of nano - zno were investigated and compared with commercial zno powder

    結果表明:前驅物在均勻沉澱法制備納米材料的程中起到了重要的關聯作用,通調控沉澱反應的工藝參數就可以控制前驅物的形貌和尺寸,從而經焙燒反應控制了納米的形狀和尺寸。
  15. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量薄膜材料,另外,還採用共蒸發(通電子束蒸發與熱蒸發同時進行)及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  16. In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process

    本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬膜,然後通二次退火得到了具有六角結構的高質量多晶薄膜材料,另外,還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬膜的方法制備出了高質量多晶薄膜材料和mgzno合金薄膜材料。
  17. Effects of lycium chinense mill leaf tea on lipid peroxidatio in rats

    枸杞葉茶對大鼠脂質的影響
  18. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究,結果顯示,所制備的薄膜為六方纖礦型結構,具有高c軸擇優取向性;表面均勻、緻密,薄膜材料由許多星狀晶粒組成,晶粒尺寸大約為10 - 30nm左右;薄膜可見光透率平均可達90 % ;對薄膜厚度以及電學性能進行了測定后發現:單次鍍膜厚度約為75 - 240nm , al ~ ( 3 + )離子摻雜型薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內;分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  19. In this work, zno thin films were prepared by sol - gel method on the glass substrate in order to study the influence of the preparation techniques on the crystallization, orientation and morphology of the films. we adopted a two - step heat treatment technique to optimize the micrcjstructure of the films, and subsequently discussed the forming process of the zno thin films

    本論文研究了在載波片和si ( 001 )上溶膠凝膠旋塗法的制備工藝對薄膜的結晶、取向狀況以及薄膜形貌的影響,探討了溶膠凝膠旋塗法制備的薄膜的形成程,同時引入兩步熱處理方法來優薄膜的結構。
  20. Moa is kind of necessary over - voltage protector for safety running in electrical power system, it ' s used for prevent the equipment against the damage of atmosphere and operating over - voltage without gaps is belong to the third dynasty product, it ' s recognized as the up - to - data over - voltage protector, this kind of product is made up of zinc oxide films and polymer housing for example sr, epdm, hdpe it has features of small volume, simple structure, light height, pololution - prool and non - detonation and is suitable to be usde in the densely populated city

    避雷器是電力系統安全運行不可缺少的電壓保護產品,用以保護電器設備免遭大電壓和操作電壓的損害,而復合外套無間隙避雷器是屬于避雷器第三產品,是當今各項性能最好的產品,其核心元件電阻片全部採用閥片,而外殼材料是採用復合有機材料,如硅橡膠( sr ) ,改性三元乙丙橡膠( epdm )高密度聚乙烯( hdpe )等,它具有體積小,結構簡單,重量輕,耐污積強,防爆等優點,最適合人口密度城市中使用。
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