過熱氦 的英文怎麼說

中文拼音 [guòrèhài]
過熱氦 英文
superheated helium
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 氦 : 名 [化學] helium （2號元素, 符號 he）
  1. Comparison of calculation methods of limit of superheat temperature of liquid helium

    液氦極限過熱度計算方法比較
  2. Using carbon - dating techniques, archaeologists can determine the age of many ancient objects by measurement the amount of radioactive carbon they contain

    參考譯文：在太陽深處的內核中，氦和氫經過一系列高熱原子核反應熔合作用產生了太陽的能量。
  3. The fluid flow along the cooling passage of scq magnets were compared for both supercritical helium cooling and subcooled liquid cooling. based on the analyses, the supercritical helium cooling scheme was suggested

    模擬冷卻氦流在scq磁體通道中的流動情況，比較了超臨界氦流和過冷氦流這兩種冷卻方式對流道中熱點溫度的影響，為該磁體冷卻方式的確定提供了依據。
  4. The helium will burn steadily and the higher energy production rate will heat up the star. the star will swell to a size even larger than a red giant and we have a

    在恆星強大質量的約束下，核心氦聚變成碳的過程能穩定地進行，在核心高熱的煎熬下，恆星外殼會極度膨脹成為比紅巨星更巨大的
  5. This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively

    本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ （ 60 ）粗品產率的影響；接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ （ 60 ）固體，比較了不同流動相和固定相的提純效率和效果；然後採用自己改進后的真空鍍膜機，利用電阻式加熱蒸鍍方法，得到了純c _ （ 60 ）薄膜和不同摻雜比的銀摻雜薄膜；探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響；最後通過xps ， afm ，紫外，紅外，拉曼對薄膜的成分、結構和特性作了定性和半定量分析。
  6. The results of the experiments were that leakage - currents of the 77 % diodes have obviously reduced in form 0. 08 ~ 11 a / cm2 to a value smaller than 0. 032 a / cm2. therefore, the gettering efficiency and homogeneity has been demonstrated on devices. it was also concluded that, from the experiments, the cavities band for gettering on the pol ished backside of the wafer was more efficient than that on the rough side

    氦微孔在雙面拋光矽片上顯示了很好的吸雜效率和均勻性， 77 %的注氦微孔二極體經過熱處理j *值從0 . 08一n州/ cm 』降到了0 . 032州/ cm 』以下: he +注入粗糙背面的二極體也有相當好的吸雜效果，但總體上要弱於拋光背面的吸雜效果;且單、雙面拋光片的人值的最大降低幅度都達三個數量級，證明了氦微孔強大的吸雜能力。
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