過熱退火的 的英文怎麼說

中文拼音 [guòtuìhuǒde]
過熱退火的 英文
overannealed
  • : 過Ⅰ動詞[口語] (超越) go beyond the limit; undue; excessiveⅡ名詞(姓氏) a surname
  • 退 : 動詞1 (向後移動) retreat; draw back; move back 2 (使向後移動) cause to move back; remove; wit...
  • : fire
  • : 4次方是 The fourth power of 2 is direction
  • 退火 : [冶金學] anneal; annealing; back-out
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通化學腐蝕、光學顯微鏡、掃描電鏡( sem ) 、透射電境( tem )等分析技術,對重摻砷硅單晶在單步退工藝和內吸雜退工藝中氧沉澱及誘生缺陷形態,形核與處理溫度、時間關系等進行了研究。
  2. When the two reactants were simply mixed by crush, they reacted violently and produced carbon spheres with a diameter of 50 - l00nm and sodium chloride ( nacl ) was encapsulated within the outer amorphous carbon shells, which could be confirmed by sem and tem. by annealing at 1400 ? to drive the encapsulated nacl away, hollow carbon spheres were left with a novel mesoporous structure, as presented in hrtem

    實驗中將兩種反應物通直接擠壓混合后加反應,得到無定型球狀碳材料經tem照片證實直徑為50 - 100納米,而且中間包裹氯化鈉( nacl )顆粒; xrd等結果顯示,高溫退併徹底清除nacl后形成中空碳球已經部分石墨化。
  3. Responding to the call of industrial policy adjustment in our country, yaoyu special steel company has started replacing hot - rolling with cold - rolling in the production of electric steel since 2003. it entrusted xinye gaoke group to make design and build the production line of cold - rolled electric steel with annual output of 200 thousand tons. after three years of construction, it has achieved the successful trial production of 20 - roll mill and continuous annealing and coating machine imported from germany

    耀宇特鋼從2003年開始,響應國家產業政策調整號召,開始電工鋼以冷代技改工程,委託新冶高科集團原冶金部鋼研院設計,進行年產20萬噸冷軋電工鋼生產線建設,經近三年建設,目前從德國引進20輥軋機及連續退塗層機組均已試產成功,為提高產品性能和質量,同時提升我國電工用薄鋼板生產作出了卓越貢獻。
  4. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示,單步高溫處理時重摻硼樣品不能形成潔凈區;降溫退中,降溫速度較為緩慢( 3 / min )時能生成一定量氧沉澱,但沒有潔凈區形成;普通高?低?高三步處理程中,形成明顯潔凈區,但相對輕摻樣品而言,潔凈區較窄,氧沉澱密度明顯偏高,說明重摻硼樣品吸雜能力強。
  5. Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material

    研究表明:電解液配製程中,氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響,其中溶液ph值是最主要影響因素;在儀器使用條件探索中,理論結合實驗確定了本電鍍液體系循環伏安電勢窗理想范圍,並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物共沉澱是目前研究點,在此選用與釕同一族銥作為共沉澱元素,銥加入會阻礙氧化物沉積速度,銥比例超50 %會使沉積作用停止,但是二元氧化物協同作用使沉積活性物質比容量大大提高;一定溫度下退后處理作用會使水合釕化物轉變成混合價態氧化釕,從而提高活性物質穩定性。
  6. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向高質量氧化鋅薄膜材料,另外,還採用共蒸發(通電子束蒸發與蒸發同時進行)及後退簡單方法制備出包埋到介電物質mgo薄膜中zno量子點材料。
  7. The results showed that the microstructure of as - deposited tbdyfe ii 1ms were amorphous and the crystal of tbfe2 were found in films after annealing at 500. annealing films in vaccum could improve the saturation magnetization ms and the susceptibility, decrease the coercivity and the saturaion field, and make the direction of the magnetic moments parallel to the film plane

    結果表明,制備態薄膜為非晶態結構,經500真空退處理后,薄膜出現了tbfe _ 2結晶物,薄膜矯頑力和外場飽和磁場大大降低,飽和磁化強度增強,初始磁化率提高,易磁化軸轉向膜面。
  8. X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming

    研究結果表明,由於雜質fe摻入降低了smco薄膜磁性能;制備態smco薄膜為非晶態結構,矯頑力hc隨著薄膜厚度增加而減小,剩磁比mr ms隨膜厚增加而增加;經500真空退處理后,薄膜出現smcos結晶物,矯頑力hc降低, mr ms減小,磁化機制由疇壁釘扎類模型轉為形核類模型。
  9. Foam glass is a new kind of inorganic heat insulating material with a structure of equally closed cells. it is mainly made of glass added with adequate foaming agents after heating and baking in high - temperature tunnel furnace, then annealing and cooling

    泡沫玻璃是一種以玻璃為主要原料,摻入適量發泡劑,通高溫遂道窯爐加焙燒和退冷卻加工處理后制得,具有均勻獨立密閉氣隙結構新型無機絕材料。
  10. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現: 1 )疊層材料具有明顯優于均質材料電性能,在490溫差下, p -型和n -型疊層材料最大輸出功率分別達到37 . 0和30 . 0 ( mw / cm ~ 2 ) ,是同類型均質- fesi _ 22 . 5和3倍; 2 )在焊接程和190長時間退處理程中,焊接渡層合金和基體半導體(特別是bi _ 2te _ 3 )之間存在明顯元素相互擴散,從而在渡層中形成一些低熔點共晶體和脆性化合物,這是導致疊層材料破壞主要原因; 3 )焊接渡層合金與半導體基體之間潤濕性是影響界面層電性能主要因素。
  11. 5. after high temperature annealing the hardness of the composites did not reduced obviously until 973k, this temperature greatly exceeds that of pure copper ( after cold machining, the temperature is 423k )

    本文制備材料經高溫退硬度明顯降低溫度點為973k ,大大超了純銅(冷加工態)423k ,而且穩定性能較好。
  12. The main topic of this thesis is to deposit the lacamno3 films using the pulsed laser deposition ( pld ) technique, and to improve the properties of the films through a serials of processes including the post annealing treatments. at last, the relation between the physical properties and the film making processes of the materials are discussed and some possible applications explored

    本論文任務就是利用脈沖激光沉積lacamno _ 3薄膜,並通退等一系列工藝處理提高薄膜性質,最終製作測輻射敏感元件,同時也對材料物性展開討論,以探尋更多應用。
  13. The doping of in of cdznte wafers was also achieved through annealing by adding in in the annealing sources. the specific parameters were established according to the thermodynamic principles of multi - component system. the properties of the wafers, including composition distribution, optical and electronical properties, were tested before and after annealing

    退與摻雜程結合起來,根據多組分力學原理制定了退摻雜工藝參數,對比研究了摻雜退前後成分分佈、 in摻入量、紅外透率以及電阻率變化情況。
  14. It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing

    有報道稱採用離子注入方法將mn ~ +注入到gaas單晶襯底中,經快速退處理后,發現在晶體中生成了mnas第二相。
  15. Now if we suppose that the rated temperature limit of any chip were identical, confining the highest temperature in the rated limit is the most important, for this purpose i apply the principle of annealing algorithm to the optimization of place distribution design. under the unvaried condition of thermal dispersion, we can get the least temperature of the maximum value in some kind of chip array

    為了使得電子元件最大溫度負荷在特定散狀態下達到最低(低於額定最高溫度值) ,我們將模擬退演算法優化設計思想應用到電子元件陣列布局優化中,使得在不改變外部散條件情況下,僅僅通電子元件位置分佈改變就取得降低其最高工作溫度效果。
  16. With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution

    隨著大規模集成電路( vlsi )和超大規模集成電路發展,節省時間、節省能量、容易控制快速退工藝在半導體器件製造工藝中得到了廣泛應用,並且在硅材料缺陷工程中發揮了特殊作用,人們通高溫快速處理在矽片中引入空位,並控制空位分佈,進而形成了具有較強內吸雜能力潔凈區。
  17. The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated

    摘要通對已經兩步(低高)退大直徑直拉矽單晶片進行高溫快速處理,研究矽中氧沈澱被高溫快速處理消融情況。
  18. The development of solar cells is showing a tendency to improve efficiency and reduce cost. crystal silicon solar cells are considered the most promising cells in the future for their advantages, such as high efficiency, great stability, simple processing, and none - pollution

    主要工作包括三個部分:首先研究了不同溫度退對于矽片氧碳含量和少子壽命影響,然後將處理程應用於常規太陽電池制備工藝,制出太陽電池。
  19. To achieve this aim, the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis. three parts are studied in our work, firstly, the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied, then put it into the process of solar cell and compare the capability of solar cell in two process

    作為該項研究先期工作,首先以p型( 100 )太陽電池用直拉矽片為實驗樣品,摸索出退最佳處理溫度;然後用常規工藝制備了單晶硅太陽電池,測試效率;結果發現用經處理矽片襯底制備太陽電池比用沒有經處理矽片襯底制備太陽電池其效率有明顯改善。
  20. Based on the heating treatment control system of a spring steel - wire production line in a factory, hubei province, the paper deals with the design of fully automatically monitoring system across its manufacturing process. through research of parameters of temperature control during the period of heating, annealing and tempering in steel wire manufacturing process, the corresponding composite intelligence fuzzy controller is designed. in light with the way of fast heating, a composite intelligent fuzzy controller combined with on - off control & pi control is set up

    本文以湖北某鋼絲繩廠彈簧鋼絲處理生產線控制系統為依託,論述了整個生產監控系統設計,通對該類鋼絲生產中快速加程、退、回程中溫度控制參數研究,設計了相應智能型復合模糊控制器,根據快速加實現方式,對于快速反應被控對象,給出了以模糊控制為基礎結合開關控制、 pi控制快速升溫,且不超調一種智能型復合模糊控制器,對于退、回等工藝程,採用電加方式,該類工藝程作為控制對象屬于具有純滯后大慣性系統,作者設計出模型預測自適應模糊控制器,並對所設計控制器進行計算機模擬實驗,取得了滿意效果。
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