遷移器 的英文怎麼說

中文拼音 [qiānyíqì]
遷移器 英文
transference apparatus
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. Almost one - third of all proteases can be classified as serine proteases, including complement subcomponent clr / cls, mannose - associated serine proteases ( masps ), ovochymase, spermadhesin, type ii transmembrane serine proteases ( ttsps ) etc. these proteins are involved in diverse biological processes, including developmental processes such as complement activation, ovulation, fertilization, tissue remodeling, cellular migration, cancer invasion and metastasis, intestinal digestion, embryogenesis, or organogenesis

    絲氨酸蛋白酶（ serineprotease ）是機體最重要的酶分子之一，約占機體蛋白酶的三分之一，我們較熟知的絲氨酸蛋白酶就包括補體組分c1r c1s 、甘露糖結合絲氨酸蛋白酶、 ovochymase 、 spermadhesin和型跨膜絲氨酸蛋白酶等，它們參與了補體活化、排卵、授精、組織重建、細胞遷移、腫瘤浸潤和轉移、消化、胚胎發育、器官形成等多項生理功能。
  2. After analysising the theory and characteristics of the corba and mobile agent technologies, the paper brings forward firstly a kind of mobile agent architecture - coma, and gives the solution to coma ' s asynchronous transfer, concurrent control, naming, location and intelligence mechanism in detail. furthermore, aiming at making up the flaws of the application servers based on corba in distributed group environment and solving the problem of object ' s remotion on the corba server, the paper proposes a kind of corba architecture based on mobile agent - maorb, discusses naming and transparent transfer of mobile agent in a maorb system in detail, and gives a reasonable improvement method

    本文在分析了corba和移動agent這兩種分散式技術的運行原理及其特點之後，首先提出一種應用於協同環境下的移動agent體系結構coma ，並詳細給出了coma的異步遷移、並發控制、命名和尋址，智能化機制這幾個關鍵技術的解決方法。進而，為了彌補單純的利用corba技術來構建分散式集群環境中應用服務器的不足，解決corba服務端對象的可移動性問題，本文又提出了一種基於coma的corba體系結構maorb ，詳細討論了maorb系統中移動agent的命名和透明遷移以及corba和coma的結合度問題，並給出了合理的解決方案。
  3. Application of the direct transfer substructure method to earthquake - resistant analysis of a series reactor

    直接遷移子結構法及在疊積電抗器抗震分析中的應用
  4. Its peculiarity is that the vortex pair formed on the ejection stroke can ? move far enough under the self - induced velocity, so the vortex pair is sucked into the cavity of the actuator during the suction stroke

    這種流動的特點是：在作動器的「吐出」行程，其出口產生的旋渦對還來不及向下游遷移便進入了作動器的「吸入」行程，重新進入作動器腔體。
  5. Using a strained si layer as a channel in cmosfet may increase the mobility of carriers and thus enhance the device ’ s performance considerably such as transconductance and cutoff frequency

    在sige虛擬襯底上生長應變si層做器件溝道，將大大增加載流子的遷移率，從而提高器件的跨導和其他性能。
  6. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  7. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  8. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  9. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。
  10. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  11. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  12. Based on the theoretical studies, a band - pass filter circuit is optimized in order to decrease current density and increase the electromigration lifetime

    在理論研究基礎之上，藉助于計算機輔助設計，針對一個帶通濾波器電路進行了電路優化，以提高其電遷移壽命。
  13. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  14. For application for relocation of mobile station on a vehicle, please return the original sticker for cancellation

    如申請遷移安裝在車輛?的業餘電臺器材，請交回有關標紙注銷。
  15. This article first analyzes a paradoxical phenomenon that is predominant in campus lan settings where there is a large amount of idle cpu cycles available while at the same time the computing needs from many researchers ca n ' t be met. it proposes an idea of setting up a campus computing grid with a detailed plan for its implementation, discusses the challenges of upscaling a campus computing grid into an internet computing grid and suggests possible solutions. gram ( grid resource allocation manager ) of globus toolkit 3. 2 and relative technology on it is studied, and the solutions to extend gram to support task rescheduling and the cooperation type task are proposed. the design and implement of the gram client based on web that is the kernel part of the task anagement module are discussed, and the design of resource discovery module and task transfer module are gived

    本文首先分析了校園網環境中存在大量計算資源閑置與科研人員科學計算需要得不到滿足之間的矛盾，給出了建立校園計算網格的構想及具體的設計方案，並提出了校園計算網格推廣到internet計算網格存在的問題及解決方案;研究了globustoolkit3 . 2中的資源分配管理器gram及其相關技術，並給出了擴展gram對任務再調度和協作型任務支持的解決方案;設計實現了校園計算網格中任務管理模塊的核心部分基於web的gram客戶端，並介紹了資源發現與任務遷移模塊的設計;然後在分析min - min調度演算法基礎上，借鑒qosguidedmin - min演算法的思想，並利用主機資源分類的思想，給出了在負載平衡和時間跨度都有較大改善的balance - qosguidedmin - min演算法模型的思想與實現;最後設計實現了調度演算法驗證模塊，並在此模塊上對比了改進的演算法balance - qosguidedmin - min與min - min演算法的調度性能。
  16. Some schedulers require the job to be relinked with a particular library to support checkpoint and process migration

    有些調度器需要任務重新鏈接到某個特定的庫上來支持檢查點和進程遷移的功能。
  17. Websphere application server v4. 0 infocenter. while this article focuses on websphere application server, advanced edition, the migration tools discussed will also migrate to websphere application server, advanced single server edition

    本文集中討論了websphere application server ，高級版，但文中所討論的遷移工具也能用於遷移websphere application server ，高級單服務器版。
  18. As the rac ( room air conditioners being popularly used more and more in our country, the factories of the world famous rac and compress manufactures have been moved into the mainland of china

    隨著家用空調器在我國的不斷普及和世界知名空調器及空調壓縮機製造商將其生產基地逐步遷移至中國大陸，截止2001年中國已經成為世界最大的空調器製造生產和銷售國。
  19. Many new features are implemented in dpcf runtime, such as : no any preprocessor and precompiler ; rmi - liked programming model ; objects created on remote hosts ; asynchronous remote method invocation ; migrating objects to heterogeneous hosts ; scalable support for multi - protocol of network

    Dpcf運行時的特性包括:不需要任何的預處理程序和預編譯器;類似於rmi的編程風格;能在遠程主機上創建對象;異步遠程方法調用;能在異構主機間遷移對象;可擴展的多種網路通訊協議的支持。
  20. In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease

    對sicjfet的電參數如電子濃度，遷移率，電阻率和空間電荷區密度在中子輻照下的變化進行了分析，提出了中子輻照下6h - sicjfet的器件模型，利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。
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