遷移率譜 的英文怎麼說

中文拼音 [qiānyílǜpǔ]
遷移率譜 英文
mobility spectrum
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 譜 : Ⅰ名詞[書面語]1 （按類別或系統編成的書或冊子等） table; chart; register 2 （指導練習的格式或圖形）...
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. 2. the data from zymogram ( est bands and their rf ) are transferred into bimorphic characteristic data. a data matrix is established based on the data and calculated by phylogenetic analysis software package winclada 1. 00. 04, and then phylogenetic trees of intraspecies and interspecies are mapped

    2 、將所獲得的盲蝽科4亞科11屬23種盲蝽雄雌個體的酶譜數據（酶帶和相對遷移率rf ）轉化為二態特徵數據建立矩陣，應用系統發育分析軟體包winclada1 . 00 . 04對數據矩陣進行分析運算，並分別獲得各個亞科內和亞科間的系統發育樹。
  2. Such a model will ensure the existence of this species in this area. 4. the comparison of the biochemical contents between subitaneous and diapause eggs the dry weight and the contents of each biochemical components in a diapause egg were all more than the ones in a subitaneous egg ; the comparatively content of lipid in t

    Sns一獄ge圖譜中滯育卵有10條蛋白質條帶與正常卵的遷移率不同，主要分佈在分子量為71 . 52一102 . 16kd范圍內;產滯育卵的雌體比產正常卵的雌體多了一條分子量為74 . 26kd的蛋白質條帶。
  3. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  4. Mineralization of soil organic carbon and its motivating factors to the dragon spruce forest and alpine meadows of the qilian mountains

    電泳圖譜共分離出34條不同遷移率的譜帶;依據蛋白電泳圖譜等電點
  5. The main works and results we have accomplished are as follows : 1 ) red - detuned locking of cooling / trapping laser to the cycling transition of cesium cooling has been accomplished by means of a double - passed acoustic - optical frequency shifting system and the technique of saturated absorption spectroscopy. the short - term residual frequency jitter is less than 350khz ; 2 ) automatic controlling system by computer programs has been established for laser cooling and trapping and cavity qed experiment. the laser and magnetic fields can be controlled by the acoustic - optical modulator and the electronic - controlled logic gate respectively

    具體如下： 1 ）採用了往返兩次通過的聲光頻移系統結合飽和吸收光譜技術的實驗方案，實現了冷卻俘獲激光頻率相對于銫原子冷卻循環躍遷的負失諧鎖定，短期頻率穩定度約在350khz以內，並可方便地調節其負失諧量而無須對后續光路再作調整； 2 ）建立了一套基於計算機程序控制的、銫原子激光冷卻與俘獲實驗所需的時序控制系統。
  6. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  7. The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab - epd in gaas substrate was not uniform ; secondly, the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly, mesfet devices performance correlated with ab microdefects ; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices

    實驗結果表明， lecsi - gaas的電阻率、遷移率、載流子濃度、位錯密度和ab微缺陷分佈都不是均勻的，且電參數的分佈與ab - epd 、位錯密度分佈有關。製作的mesfet器件的性能參數分佈與ab微缺陷有明顯聯系。從plmapping測量結果可以看出材料的襯底參數好，則pl譜的強度高， pl譜均勻性也好，器件參數也好，就有可能製作出良好的器件與電路。
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