遷移速度 的英文怎麼說

中文拼音 [qiānyísùdù]
遷移速度 英文
migration rate
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 速 : Ⅰ形容詞（迅速; 快） fast; rapid; quick; speedy Ⅱ名詞1 （速度） speed; velocity 2 （姓氏） a surna...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  • 速度 : 1. [物理學] velocity; speed; blast; bat 2. [音樂] tempo3. （快慢的程度） speed; rate; pace; tempo
  1. E ) with the help of pecvd, we found that high substrate temperature is advantage to the basal plane orientation. higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly

    E ）高溫有利於基面平行於襯底的取向，在高的生長溫度下吸附於襯底表面的沉積粒子能夠迅速遷移到二維核的位置，並使粒子有足夠能量調整位置。
  2. This phenomenon was closely related to the transportation and extraction rate of carbon atoms in the surface of catalysts at different temperatures

    這種現象與不同溫度下碳原子在催化劑表面的遷移和析出速率密切相關，也即與不同溫度下催化劑的活性有關。
  3. The teg - s80txe provides simple migration, scalability and flexibility to handle new applications and data types making it a highly reliable and cost effective solution for high - speed network connectivity

    該甘醇- s80txe提供簡單遷移，可擴展性和靈活性，以處理新的應用程序和數據類型，使其成為高度可靠和具成本效益的解決方案，高速網路連接。
  4. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  5. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  6. Cataphoretic migration speed

    陽離子電泳遷移速度
  7. Comparing to a - si tft, p - si tft has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p channel capability, low power consumption and self - aligned structures. with these good characteristics, p - si tft lcd could provide brighter and stable image

    相對于a - sitft ， poly - sitft有其明顯的優勢:高遷移率、高速高集成化、 p型和n型導電模式、自對準結構以及耗電省、解析度高等優點，能夠提供更亮、更精細的畫面。
  8. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  9. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  10. Thought the pan evaporation, it has been found that the evaporation of shengli crude oil is controlled by the first step and the effect of wind velocity is small. the prediction equation is dw / dt ^ k d ? 2 a ju, y hct / t, which is related with the liquid characters and states ( e. g. thickness, area, viscosity ) and is independent of wind speed

    2 、實驗結果表明，勝利原油蒸發由第一步即蒸發由液體內部易揮發組分向液體表面的遷移來控制，因此風速影響很小，建立速率方程時不必考慮風速，只需考慮液體本身的性質和狀態（如厚度、表面積、粘度等） ，速率方程可寫為： dw dt = kd4 ? 』 a嚴t 。
  11. In general, organic semiconductors have lower mobility than their inorganic counterparts do, resulting in slower switching speeds

    一般說來，有機半導體的遷移率比無機半導體的來得低，這使得開關的速度較慢。
  12. Abstract : based on the concept of space migration length of photo - activation species, the analytical expression of the total number n of photo - activation species that can reach a segment on the substrate in the cubic deposition reaction space is derived. the simulation of the relationship of deposition rate and position of substrate is also completed. the simulation result agrees with the experiment data well

    文摘:基於光激活物質空間遷移長度的概念，推導出方形反應空間中到達基片上單位面積的光激活物質總數的解析表達式，對光化學汽相沉積中淀積速率和基片位置的關系進行了模擬和分析.模擬結果同實驗結果符合良好
  13. Two typical examples analyses are conducted for the average conditions both of winter and summer climates under vapor diffusion and air leakage. a further discussion is set forth to determine the main factors that the moisture accumulation in wall is affected. it is found that the factors are the relative humidity at the wall surface, indoor temperature, permeability, air pressure difference and rate of the infiltrative or exfiltrative airflow

    本文首先研究了墻體內的濕氣遷移過程，詳細分析了濕積累現象形成的原因，通過對夏、冬兩季平均氣候下墻內溫度、水蒸氣壓力、相對濕度及濕積累在僅有擴散、擴散與空氣滲透同時存在等情況所作的具體計算，發現墻內、外表面的相對濕度、室內溫度、滲透率、空氣壓差以及空氣的滲流速度是影響墻內濕積累的主要因素。
  14. Under low wind ( < 1 m / s ), the effect of wind on the evaporation of diesel is evident and becomes inevident when the wind becomes faster than 1 m / s

    而輕柴油風速較小時（ 1m s ） ，受第三步即揮發分子從邊界層向環境遷移的影響明顯，而大於1m s的風的影響程度減弱。
  15. But the comprehensive properties were improved remarkably. with the addition of carbon nanotubes, the polarization of charging process decreased, the plateau of discharge became flatter and the migration of potential of peaks value of cyclic voltemmograms reduced. for the other hand, the exchange current increased, ohm resistance and electrochemical reaction resistance of the electrodes decreased, the diffusion resistance of hydrogen and the resistance of adsorption decreased, too

    摻入碳納米管對儲氫合金電極的容量影響較小，但其電化學性能卻有較大的改善，主要體現在：充電的極化減小，放電平臺更加平穩、循環伏安曲線的峰值電位隨掃描速度增大的遷移量減小，交換電流密度增大，電極的歐姆電阻、電化學反應、擴散電阻和吸附電阻均減小。
  16. The experiments reveals that : the amount of water vapor transfer is affected by both water content gradient and the value of water contents, when the water content of one end is approximate, the water content gradient increases, then the amount of water vapor transfer increases ; when the water content gradients are approximate, the amounts of water vapor transfer can get great differences if the water contents are different, under this condition when the water content of the dry soil is very little, the amount of water vapor transfer is much greater ; the differences of density hav n ' t great effects on water vapor transfer, but have some effects on the admixture transfer, when the density is smaller, the amount of admixture transfer is greater. the water vapor transfer finishes more quickly and need less time, and the liquid water finishes more slowly and need less time

    當一端含水量一定時，增加含水量梯度，則氣態水遷移量增大；當含水量梯度相近時，氣態水遷移量隨含水量不同可能相差很大，這種情況下當較干段含水量特別小時，氣態水遷移量相對較大；密實度的大小對于氣態水遷移的影響並不明顯，但對液態水和氣態水的混合遷移有一定的影響，在相同的實驗時間內，土體密實度較小，則混合遷移量相對較大；氣態水遷移完成速度較快，所需時間較短；液態水遷移完成速度較慢，所需時間較長。
  17. During the process, high material removal rates are obtained while the tool electrode wear is extremely small and the sub - surface is not damaged

    我的翻譯:通過這個過程，當工具電極（陽級? ）只有極小的損耗時材料便獲得了了遷移速度，並且並不危害副表面。
  18. The migration algorithm proposed by this paper allow that the execution of process migrating and process going is concurring to the most degree. the migration algorithm speeds up the migration, reduces the communication overhead and avoids residual dependencies

    本文基於進程遷移的三個條件提出的進程遷移演算法，最大程度地將進程狀態遷移和進程的運行并行起來，從而提高了遷移速度，網路通信量也較小，而且也沒有對源節點的殘余依賴性。
  19. When the growth getting higher, the migration rate of carbon atoms was increased, more carbon atoms would pass through catalyst particles to contribute the growth of carbon nanotubes, which increased the growth rate and also resulted in less defects in carbon nanotubes

    在較高溫度時，隨著催化劑活性的提高以及碳原子在催化劑顆粒表面的遷移速率的增加，可提供更多的碳原子用於納米碳管的有序生長，減少了缺陷的引入。
  20. At lower growth temperature, the lower extracting rate of carbon atoms from catalyst particles due to the lower activity of the catalysts resulted in more defects formed in carbon nanotubes. moreover, the lower transportation rate of carbon atoms in catalyst particles also made lots of carbon atoms deposited on the surfaces of grown carbon nanotubes, or on carbon wrapped catalyst particles, even to form amorphous carbon layers

    在較低溫度時，由於催化劑的活性較低，導致石墨面在生長過程中引入的缺陷較多；另一方面，碳原子在催化劑顆粒內遷移速率較低，使得多餘的游離態碳原子（或原子團）可能在納米碳管表面以非晶形式沉積，或者包覆催化劑使其「中毒」失去催化活性，或者直接形成非晶的碳納米顆粒。
分享友人
分享到 Line

分享到臉書