遷移雜質 的英文怎麼說

中文拼音 [qiānyízázhí]
遷移雜質 英文
migration impurity
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  2. The soils and sediments organic matter ( som ) are highly heterogeneous and comprise various complex organic macromolecules such as humus, kerogen, black carbon ( bc ), etc. the relative abundance, characteristics and structure of these som play a important role on the global carbon cycles, global change, transformation and fate of the organic and inorganic pollutants, the soil fertility

    土壤和沉積物有機質是高度非均質的，包括許多復雜的有機高分子聚合物如腐殖質、乾酪根、碳黑等。這些有機質的相對含量，性質和結構對全球碳循環，全球氣候變化，有機和無機污染物在自然界的遷移、轉化和歸宿，土壤的肥力等有非常重要的影響。
  3. Abstract : this paper reports the observation and analysis results on three kinds of impurity in - al2o3 by using epma - eds. we studied the differences of electric conductivity between the area containing inmpurity and the normal area by ion transport method. the effects of impurity in - al2o3 on cycle life of the na - s cell were also discussed

    文摘:用epma - eds組合儀，對氧化鋁中的三種典型雜質進行了形貌觀察和成分分析，並用電子束誘導離子遷移法，研究了雜質區及正常區的離子電導差異，討論了不同雜質的特點及對氧化鋁作用中的危害。
  4. There are three difficulties and key problems in this papaer : : the first problem is what is the dominance bearing of the leakage fractures, and how the bedrock fracture water distribute, the second is how to test the complex chemical behavior in experiment way and quantify the relative parameters, the last question is how to number the transportation of the element 90sr and its pollution to solve the three problems, this paper does lots of work and come to the prospective order, the creativities in this thesis as follow : ( 1 ) the dominance bearing of the leakage fractures and the distribution feature of the fracture water are ascertained based on rich geological data, these basal researches are very important, which are the premises to build the transport model of the fracture water in hae field

    本項研究工作的難點和關鍵問題有三個： hae處置場基巖裂隙系統中，導水裂隙的優勢方位是什麼，基巖裂隙水活躍帶分佈情況如何；怎麼對核素遷移的復雜化學行為進行實驗室測試並取得有關定量化參數；怎樣數值化表現出溶質的遷移行為和污染情況本論文在解決以上三個問題上做了大量的工作，達到了預期的目的，其創新之處有以下三點： （ 1 ）通過地質資料的分析，首次提出了hae預選處置場基巖裂隙導水的優勢方位和基巖裂隙水活躍帶的大致分佈特徵。它是一個很重要的基礎性研究成果，是建立hae處置場水運動模型的前提。
  5. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  6. The separated phase of blends and carrier injection, transport and decay were firstly investigated by monitoring two different transient el peaks

    首次引入監測基質和雜質兩個瞬態電致峰值來研究低摻雜體系的相分離及載流子注入、遷移和湮滅過程。
  7. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  8. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  9. The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films

    ，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。
  10. The results indicated that the co - dopants of li +, na + and k + could promote the crystallinity of samples. however, the co - doping of mg2 + and al3 + drastically causes the structure disorder. ( 4 ) the fluorescence decay curves of 5do of samples were measured under the excitation of 266 nm laser

    比較發現，摻雜不僅可以調節納米材料的尺寸，還可以影響材料的結晶性，尤其是後者對發光性質和熒光動力學過程，如熒光強度、電荷遷移帶的位置、 ~ 5d _ 0的壽命等，產生強烈的影響。
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