選擇摻雜 的英文怎麼說

中文拼音 [xuǎnzháichānzá]
選擇摻雜 英文
preferential doping
  • 選 : Ⅰ動詞1. （挑選） select; choose; pick 2. （選舉） elect Ⅱ名詞（挑選出來編在一起的作品） selections; anthology
  • 擇 : 擇動詞（挑選） select; pick; choose
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 選擇 : select; choose; opt; election; choice; culling; alternative
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  2. The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0. 6 at. % )

    除了改進冷卻控溫系統外，選擇摻雜濃度較低的激光晶體，有利於高效散熱，得到更穩定的激光輸出。
  3. It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

    通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。
  4. The influence on the magnetism and the electron spin resonance ( esr ) over a wide range of composition and temperature have been studied systematically. an obvious symmetric esr signal with a lorentzian lineshape in the paramagnetic regime is observed

    本論文邊過選擇磁性離子替代，著眼點在於討論衫雜離子的磁性效應，實驗發現摻雜使樣品的磁結構發生變化，且在低溫時出現磁化強度峰，用摻雜離子自旋旋轉對此進行了解釋。
  5. Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics

    基於此模型，提出在對正反向特性進行折衷時，如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。
  6. As far as the new technology of selective diffusion, the method of printing is used and the phosphoric paste ( high concentration ) is printed at the electrode - site in silicon. afterwards, a thin layer of phosphoric source ( low concentration ) is sprayed on the surface of the non - electrode - site in silicon

    在選擇性擴散新工藝中，我們採用絲網印刷電極的方法在矽片的電極位置印刷濃度較高的磷漿（摻磷sio _ 2乳膠） ，在非電極區噴塗一層濃度較低的磷源，擴散后形成重摻雜和輕摻雜。
  7. According to our theoretic analysis and the realistic fabricating condition, the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2. 5 ghz, half - wave voltage about 5v, extinction - ration less than - 40db, transmission loss of tm mode greater than 45db and transmission of te mode less than 0. 15db. to obtain higher switching speed, we proposed that traveling - wave electrode is applied to boa device

    我們選擇在sigaas襯底上生長重摻雜層，通過控制其厚度來設計速度匹配的boa光開關行波電極，實現boa光開關的高速和高帶寬，本文結合boa型光開關的特點提出一種行波電極型boa光開關結構，其理論3db調制帶寬大於20ghz 。
  8. It can increase reversible capacity of 50mah ? g ~ ( - 1 ) ’ s left or right. adding a little amount of zn, the reversible capacity is around 214mah ? g ~ ( - 1 ) after 30cycles

    利用化學反應和高溫還原反應制備了超細金屬摻雜硅碳復合材料，選擇的摻雜金屬為cu 、 ni 、 ag 。
  9. In order to avoid light degradation, low interstitial oxygen content and low boron concentration b - doped p - type cz - si material should be used, for example, the resistivity can be from 5 - 10. cm, the efficiency has reached to 22. 0 %

    上述研究工作表明：為了避免光衰減，提高矽片少子壽命，應該選擇低氧濃度的矽片，並降低硼的摻雜濃度，即：使用高阻材料製作太陽電池。
  10. An important issue to be addressed for the successful application of mpc in optical area where will find interesting application is represented by their incorporation in a matrix to fabricate a solid state system. one of the practicing methods is sol - gel technique, which has been widely used to incorporate a variety of organic and organo - metallic molecules in inorganic host

    從實用化的角度，選擇理化性能穩定、光學透明性好的無機介質作為金屬酞菁配合物的載體，制備無機基質酞菁摻雜復合固態材料，不僅對酞菁本身的穩定性，而且對實現酞菁分子的材料化進而器件化有重要意義。
  11. This paper analyses the problem of concrete cracking and leakage, and set up the model of the middle or low - strength steel slag anti - cracking and impermeable concrete ( acic ) on the base of the analysis. the four principles of water permeable resistance character, volume stability character, toughness and anti - chemical corroded character have been put forward for raw materials selection and durability design of acic, acic is designed by the theory of composite material and the theory of fiber - reinforced, and two series of acic, such as fly ash series and steel slag series, have been manufactured by means of mineral admixture, hybrid fiber and chemical admixture. hydrating heat, macro - mechanics quality, durability and microstructure of the acic have been researched

    本文對中低標號大體積混凝土滲透開裂問題進行了研究，從混凝土自身結構形成與經濟角度指出大摻量粉煤灰與膨脹劑復合配製大體積混凝土的問題所在，提出採用鋼渣微細礦粉配製中低標號防滲抗裂混凝土的思路，運用復合材料理論設計中低標號防滲抗裂混凝土，提出了低水化熱、抗滲性能、體積穩定性、韌性和抗沖磨性能是中低標號防滲抗裂混凝土材料選擇和耐久性設計的主要原則，採用鋼渣微細粉復合混雜纖維、化學外加劑的技術路線，配製了適合於深水等特殊環境中的大體積中低標號鋼渣系列防滲抗裂混凝土，對其進行水化特性、宏觀物理力學性能、耐久性和微觀結構研究。
  12. Mechanical folding test was applied to analyze the crack behavior of dlc films. the results show that the crack appears due to the mechanical stress and the initiation and propagations of the cracks may be suppressed with higher rf power, bias voltage and gas pressure

    機械彎折試驗結果表明，沉積成膜過程中，應選擇較高的氣壓、基板負偏壓、射頻功率以及適量的n摻雜來制備抗往復彎折的、耐失效性能優越的膜層。
  13. Dielectric property changing of disperse phase under external field is the reason that the modulating ability is strengthened. ( 3 ) microwave transmitting characters of erf with particles of batio3, tio2 doped ce and colloid were investigated

    當微波頻率位於8g 12g之間時，研究了鈦酸鋇、鈰摻雜二氧化鈦以及復相膠囊電流變液在8 12g頻段范圍內的微波透射頻率選擇性特徵。
  14. The lifetime of particles co - doped with li + and na + increased as compared to that of un - doped one. however, the lifetime decreased as co - doped with other dopants. in addition, we also studied that ultraviolet ( uv ) light - induced spectral change in eu3 + - doped aluminosilicate glass and red to blue up - conversion emission of tm3 + -, yb3 + - doped y2o3 nanocrystals

    （ 2 ）在紫外光輻照下， eu ~ （ 3 + ）摻雜的氧化物玻璃電荷遷移帶強度降低，通過研究輻照與激光的功率密度、波長的關系，發現這種變化屬于單光子過程，並具有頻率選擇性。
  15. The preparation of conductive fibers with playaniline is summarized. it is pointed out that the conductive fiber produced by belending a suitable organic solvent, the doped polyaniline and a matrix polymer to wet spinning will have a very bright future

    指出選擇合適的有機溶劑與摻雜后的聚苯胺和母體高聚物進行共混紡絲，所得導電纖維具有良好的發展前景。
  16. Then we grew the material with different active layer growth temperature, different v / ratio, different doping concentration and form. after that, we tested these materials by photoluminescence ( pl ) technology, and got the best growth condition according to the results of photoluminescence spectra. our result was that the active layer growth temperature was 700, v / ratio was 60, waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm, p - type doping with dmzn from 90sccm to 490sccm )

    然後在不同的有源區生長溫度、 /比、摻雜方式及濃度情況下對激光器材料進行外延生長，並利用光熒光（ pl ）技術對不同生長條件下外延材料的光致發光特性進行了測試對比，結果表明在下列條件下生長出來的材料具有更好的光學和電學性能：有源區生長溫度在700 、波導層/比選擇為60 、 n型波導漸變摻雜190sccm - 590sccm的sih _ 4 、 p型波導漸變摻雜90sccm - 490sccm的dmzn 。
  17. Te, sb and ag were selected as the dopants in the synthesizing process of mg2si, and the influence of dopants and dopants " amount on thermoelectric properties of mg2si specimen was studied

    選擇te 、 sb 、 ag元素作為摻雜對象，研究了摻雜元素種類和摻雜量對mr _ 2si基熱電材料熱電性能的影響。
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