重氮化 的英文怎麼說

中文拼音 [zhòngdànhuà]
重氮化 英文
diazo process
  • 重 : 重Ⅰ名詞（重量; 分量） weight Ⅱ動詞（重視） lay [place put] stress on; place value upon; attach im...
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  1. Using ethyl cyanoacetate, triethyl orthoformate and methylhydrazine as main raw materials, the herbicide pyrazosulfuron was prepared through the reactions of substitution, amination, cylclization, diazotization and chlorosulfonation

    摘要以氰乙酸乙酯、原甲酸三乙酯和甲肼等為主要原料，通過取代、胺化、環化、重氮化和氯磺化等反應制得了除草劑吡嘧磺隆原料藥。
  2. The reaction mechanism and synthetic application of - diazo carbonyl compounds

    -重氮羰基化合物分解反應的機理以及合成應用
  3. Benzene diazonium hydroxide

    氫氧化重氮苯
  4. Can effectively promote the diazo decomposition and resulted in selective intramolecular n - h insertion. on the other hand, the wolff rearrangement of the

    在-重氮羰基化合物的合成應用方面，發現了cu acac
  5. C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led

    C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。
  6. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。
  7. Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn

    襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響，存在偏壓閾值，低於該值不能產生立方氮化硼。
  8. . . creating a new kind of diazomethane

    生成一種新得重氮甲烷化合物
  9. Creating a new kind of diazomethane

    生成一種新得重氮甲烷化合物
  10. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  11. In the growth of c - bn films, the bombardment of particles with high energy plays a vital role

    在立方氮化硼的形成過程中，高能粒子對薄膜的轟擊起著至關重要的作用。
  12. In the end of the paper, we discussed the particular advantage of rf - pepld for deposition of c - bn thin films and the important meaning of the nanothermodynamic theory proposed by this paper

    文章最後提出了常溫下rf 『 pepld方法沉積立方氮化硼薄膜的獨特優勢並討論了本文提出的金剛石的納米成核熱力學理論的重要意義。
  13. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  14. The nitriding is an important heat treatment process to boring axis in cnc floor - type milling / boring machine

    摘要氮化處理是數控落地銑鏜床上重要部件鏜軸的常用最終熱處理工藝。
  15. Abstract : through analysis of properties of the moulds used in aluminium alloy forging products after nitriding process, the significance of moulds nitriding process in massive, medium or small type and high - precision aluminium alloy die forging products is discussed

    文摘:通過對生產鋁合金模鍛件所需模具經過氮化處理后的性能分析，闡述了模具氮化處理在大批量、中小型、高精度鋁合金模鍛件生產中的重要性。
  16. The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen

    在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。
  17. After hydrotreating heavy feedstock, sulfur compounds, nitrogen compounds and metals contaminants can be removed and good rfcc feedstock can be obtained simultaneously a small amount diesel and naphtha are produced by creaking heavy oil

    對重質原料進行加氫處理后，可以脫除其中的含硫、含氮化合物及金屬雜質，為重油催化裂化裝置提供優質的原料，同時可將重質油裂化生產少量的柴油和石腦油餾分。
  18. However, the si3n4 is non - crystalline when power is 100w or 150w. the agglomeration and the distribution were important parameter of nanopowder, which were analyzed by the laser light scattering particle - size test instrument. but the result appeared great error because of this instrument itself and high requirement to sample

    粒徑分佈和團聚是納米粉體材料重要的表徵手段，採用激光散射技術對納米氮化硅粉末粒徑的分佈和團聚進行分析，激光散射技術由於本身的限制和對樣品的高要求，測量納米材料的分佈有較大的誤差。
  19. The thesis focuses on the manufacture practice and the characteristic of ionic nitriding. the emphasis is placed on the research of plasma nitriding principle, nitriding technics and operation, test on the microstructure and performance of the nitrification layer

    該課題著力于生產實踐，圍繞離子氮化技術特點，注重理論聯系實踐，介紹了等離子滲氮原理、滲氮工藝和操作、離子滲氮層組織性能的檢測。
  20. Jintan star chemical co., ltd. is a professional fine chemical production enterprise which has rich experience in diazo reaction, friedel - crafts and reducing reaction

    我公司是一家專業化、科研型化工生產企業，在重氮化反應、傅克反應、還原反應、縮合反應、霍夫曼反應等方面有豐富的經驗。熱忱歡迎您的光臨指導！
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