重氮薄膜 的英文怎麼說
中文拼音 [zhòngdànbómó]
重氮薄膜
英文
diazo film-
The structure tests showed that n2 partial pressure could change the percent of sp ^ c in cnx coatings the effects of cnx and dlc coatings on mouse fibroblasts and human endothelial cells were determined by scanning electron microscopy
研究發現，在其它條件一定的情況下，氮氣分壓對薄膜n含量的影響是至關重要的。隨著n _ 2氣分壓的增大， cn膜中的n含量增加。The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth
用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。In the growth of c - bn films, the bombardment of particles with high energy plays a vital role
在立方氮化硼的形成過程中，高能粒子對薄膜的轟擊起著至關重要的作用。In the end of the paper, we discussed the particular advantage of rf - pepld for deposition of c - bn thin films and the important meaning of the nanothermodynamic theory proposed by this paper
文章最後提出了常溫下rf 『 pepld方法沉積立方氮化硼薄膜的獨特優勢並討論了本文提出的金剛石的納米成核熱力學理論的重要意義。However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc. because c - bn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors
立方氮化硼（ c - bn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ c - bn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc., because cbn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors
立方氮化硼（ cbn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ cbn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。Recently there has been an extensive worldwide effort to synthesize bn films and investigate ultraviolet sensitive properties of bn, which has an important significance to the development of ultraviolet band detecting
氮化硼薄膜材料的制備及其紫外光敏性能研究，是近年來寬禁帶半導體材料研究的熱點課題，對紫外波段信息探測領域的發展有重大意義。In the films prepared by rf - sputtering, two new green pl bands, which strengthened with the increase of n content in the thin film, were observed except those pl bands corresponding to the result of pecvd. moreover, the intensity of every pl band is strongly affected by the ts
在濺射法制備的薄膜中，除汕頭大學碩士學位論文相應的熒光發射帶外，在綠光部分出現了兩個較強的新帶，其強度隨薄膜氮含量增加而升高，而且各帶的熒光強度嚴重地受沉積時基片溫度的影響。分享友人