量子阱激光器 的英文怎麼說

中文拼音 [liángzijǐngjīguāngqì]
量子阱激光器 英文
quantum-well laser
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 量子 : quantum; gion
  • 激光器 : [光學] （光激射器） laser （縮自 light amplification by stimulated emission of radiation）; optic...
  • 激光 : [物理學] laser 激光靶 laser target; 激光報警器 laser avoidance device; 激光玻璃纖維 laser fibre; ...
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. Finally, we got the 940nm ingaas / algaas strained quantum well semiconductor laser

    最終獲得ingaas / algaas結構的940nm應變量子阱半導體激光器。
  3. Materials design and grow of strained quantum well lasers with high characteristic temperature

    高特徵溫度應變量子阱激光器材料設計與生長
  4. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  5. For the wave - guide of sch - sqw 940nm quantum well laser, we used this way to simulate and compare, got the far - field corner 35. 8 when the al percent was 25 % and wave - guide ' s thickness was 150nm. compare with the results former, this value was improved much

    對于本文中採用的分別限制單量子阱發光波長940nm半導體激光器的波導結構，利用該理論方法進行模擬對比后，得到當波導層al組分為0 . 25寬度為150nm時遠場發散角為35 . 8 ，較以往有很大的改善。
  6. The main factors which affect qw ld thermal characteristics

    影響量子阱激光器熱特性的主要因素
  7. After got the growth and structure parameters, we had fabricated the laser with these optimal parameters. after a series of operations, we got the semiconductor laser array which was 1cm bar

    在確定了mocvd生長940nm量子阱激光器材料的最佳生長參數和結構參數后，我們將這些結果應用於激光器的製作，經過一系列工藝過程，得到條長1cm的半導體激光器陣列。
  8. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱激光器及高亮度發光管的理論研究與實驗的基礎之上，採用沈光地教授提出的隧道級聯思想，成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙波長應變量子阱激光器，激射波長分別為952 2nm和990 2nm ， el譜的譜線寬度約3nm ，未鍍膜器件單面最大輸出光功率可達2w以上，閾值電流最低達120ma 。
  9. Study of optical coatings for high power 808nm quantum well laser through experiments

    大功率量子阱激光器腔面鍍膜實驗研究
  10. Interdiffusion of si and ge atoms during epitaxy growth of ge layer on si studied by raman spectroscopy

    分子束外延生長高應變單量子阱激光器
  11. Optimized layers design for algan gan ingan symmetrical separate confinement heterojunction multi - quantum well laser diode

    對稱分別限制多量子阱激光器的優化設計
  12. So it is easy to regulate parameters to obtain results. in addition, circuit model of quantum cascade laser whose lattice matchs with inp has been structured and some valuable conclusions have been gotten.

    對g . rossi提出的多量子阱激光器的電路模型進行了改造，考慮到模型的實用性，模型用多個分支電路來描述，以便在模擬時調整參數的設置相對容易，獲得結果更快。
  13. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  14. Ingaasp long - wavelength quantum well laser is at present appied most extensively in optical fiber communication. structuring its circuit model can optimize the design of the optical transmitter and it is significant to design high - qualitied optical communication system

    Ingaasp四元系長波長量子阱激光器是目前在高速光纖通信中應用最為廣泛的一類激光源，構建其電路模型有助於完成光發射機的優化設計，這對于高質量的光通信傳輸系統有非常重要的意義。
  15. Mri scanning, developed in this very building ; the contraceptive pill ; modern infertility treatment ; ultrasound scan for unborn babies ; unlocking the double helix structure of dna ; keyhole surgery ; placing fluoride in the water supply ; the portable defibrillator ; the hepatitis b vaccine ; strained quantum - well lasers which contain the information used in cds, dvds and the internet ; dna fingerprinting. a whole speech could be given that amounted to nothing more than a list of examples

    正是在牛津這個地方研究和開發出來的核磁共振掃描、避孕藥、現代不孕癥治療術、胎兒超聲波檢查、解開dna雙螺旋結構之謎、鎖孔外科手術、在供水系統中加氟、便攜式心臟除顫器、乙肝疫苗、在cd 、 dvd光盤上存儲信息的應變量子阱激光器、 dna指紋識別技術等。
  16. The maximum one side output power of uncoated lasers attain to 2w and the minimum threshold current is 120ma. thereafter, algalnp and algaas material system lateral real refractive index waveguided 650nm / 780nm double wavelength multiquantum well lasers for dvd - rom driver and dvd player ' s optical pickup system are simulated and designed on the basis of the experiment of conventional lasers and the former research of tunneling cascade devices

    在此之後，結合650nm附近波長的常規algainp gaas多量子阱激光器的實驗結果與以往隧道級聯器件的研究，設計並模擬分析了基於algainp材料與algaas材料的可用於dvd - rom驅動器和dvd播放機光學讀取系統的側向實折射率導引隧道級聯650nm 780nm雙波長多量子阱激光器。
  17. In addition, this paper has analyzed and calculated the wave - guide mode theory, got the quantum well laser photic - field distribution ' s fluctuation equation, deduced the far - field distribution ' s mathematics model by the method of stepwise approached, and simulated the near - field and far - field about the laser with computer software. we utilized a pair of mode expand layers which can restricted in photic - field to narrowed the far - field comer about quantum well laser material structure ( the corner was about 21 ?

    另外本文還對光波導模式理論進行了理論分析和計算，得到了量子阱激光器光場分佈的波動方程，利用逐步逼近的方法推導出了遠場分佈的數值模型，通過計算機軟體模擬出了激光器遠近場分布圖，並利用模式擴展層對光場的限製作用得到了窄遠場發散角（約為21 ）的量子阱激光器材料結構。
  18. The structure of the strained quantum well laser has been optimized, not only the well layer, the barrier layer, the waveguide layer and the cladding layer but also the content of al, in have been studied and designed

    對應變量子阱激光器的結構進行了優化設計，對半導體激光器的阱層、壘層、波導層和限制層的厚度及in 、 al元素的含量進行了研究和設計。
  19. Double wavelength semiconductor lasers is a kind of novel diode lasers with the function of emitting two wavelength laser. there are various use for double wavelength semiconductor lasers in the different band. 650nm / 780nm double wavelength quantum well lasers mainly apply to the optical pickups of dvd - rom driver and dvd player

    雙波長半導體激光器是一種能夠發射兩種波長激光的新型半導體器件，不同波段的雙波長半導體激光器有著不同用途， 650nm 780nm雙波長量子阱激光器主要應用在dvd - rom驅動器和dvd播放機的光學讀取等方面，而大功率950nm 990nm雙波長量子阱激光器主要應用於光學測量等方面。
  20. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
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