量子限 的英文怎麼說

中文拼音 [liángzixiàn]
量子限 英文
minimum wavelength
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 限 : Ⅰ名詞（指定的范圍; 限度） limit; bounds Ⅱ動詞（指定范圍, 不許超過） set a limit; limit; restrict
  • 量子 : quantum; gion
  1. At finite baryon densities, the underlying theory of strong interaction, qcd, is not solvable in the nonperturbative low - energy regime

    而對于有限重子密度，強相互作用的基本理論量子色動力學（ qcd ）在低能區是不可解的。
  2. At a definite temperature a mesoscopic circuit isnt in a determinate quantum state instead of in the mixed state ( or statistical state ). using the density matrix of the canonical ensemble, we have deduced the formulate of the quantum fluctuations of both charge and current in a non - dissipative mesoscopic coupled circuit. and the dependences of the quantum fluctuation of the circuit on its temperature have obtained

    在有限溫度下，介觀電路系統實際上並不處在一個確定的量子狀態，而是處在混合態.根據正則系綜的密度矩陣導出耦合互感電路中電荷和電流的量子漲落，得到了量子漲落與溫度的依賴關系
  3. In chapter we give out an explicit expression of classical capacity of general fermi quantum channel for single mode fermion system under the restriction of input average occupation numbers of fermions ( that is the input power restriction )

    第二章給出了輸入費米子平均占據數限定（平均輸入功率限定）的條件下的單模費米系統量子通道的經典容量。
  4. To sum up, two types of model have priority in explaining the origin and mechanism of visible pl in si - base light - emitting materials. but in view of the reported results, the properties of materials are badly influenced by preparation process

    歸納起來，其發光機制以量子限制效應和發光中心兩種模型為主；但就報道的結果而言，材料的發光特性都嚴重地依賴于樣品的制備工藝過程，經不同的工藝過程制備的樣品，其發光特性差別甚大。
  5. Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon, for instance quantum confinement effect model, polysilanes model, siloxen and its derivant, surfacial states model and quantum confinement - light center model etc. in addition, study status of ps at present is addressed and applied problems in some fields are analyzed in this section

    多年來，人們對多孔硅發光機理一直進行著堅持不懈的探討和研究，提出了許多種解釋多孔硅層（ psl ）發光的模型，典型的有下列幾種：量子限制模型、硅-氫鍵或多硅烷（ polysilanes ）的發光、硅氧烯及其衍生物的發光、表面態模型和量子限制-發光中心模型。
  6. In low - dimension structure, the exciton binding energy will be lager than bulk material because of quantum effects, so excitons play an important role in optical characteristics of low - dimension zno

    在低維結構中，由於量子限制效應，激子束縛能會變得更大，因而在低維zno材料中，激子發光在其光學特性中起著舉足輕重的作用。
  7. Our experiment results showed that the photoluminescence mechanism of porous silicon was ascribed to the co - effect of quantum confinement and the surface materials of porous silicon

    以上的多孔硅發光現象不能用單純的量子限域機制進行解釋，實驗結果表明它是由量子限域和多孔硅表面物質共同作用的結果。
  8. The nanometer effect of the pores, which increased surface area and caused the failure of conglomeration of dbo - ppv polymer, can lead to the 90nm blue shift of the pl peaks of dbo - ppv

    這一結果確認了多孔硅的躍遷過程主要是由量子限制效應決定，復合過程受表面態影響。
  9. Our experiment results show that the big x ( 3 ) of porous silicon is related to quantum confin

    實驗結果說明量子限域效應是硅納米顆粒產生大的三階非線性的原因。
  10. Since 1990 intense visible photoluminescence of porous silicon was found by the english scientist canham for the first time and explained by quantum confinement effect, porous silicon have been attracted many scientists attention in the world

    1990年，英國科學家canham首次觀察到室溫下多孔硅強的可見光光致發光，並用量子限域效應進行了解釋，使多孔硅迅速成為世界范圍內的研究熱潮。
  11. Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge - sio2 films. the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films

    光吸收特性研究表明，因量子限域效應，對于ge - sio _ 2薄膜觀察到較強的光吸收和光吸收邊隨ge顆粒尺寸變小而藍移的現象。
  12. The effect of polarons on the luminescence properties of quantum dots ( qds ) is an important problem in qd research and applications. we review the recent progress in the concept, possibility and size dependent energy variance of confined polarons in various qds. we suggest that the formation of polarons is related to intrinsic and / or extrinsic phonons and that the idea of confined polarons that we recently proposed can be used to explain the specific spectrscopic characteristics of oxidized nanosilicon systems, even single nanosilicon structures. this model may help to reveal the luminescence mechanism of porous silicon

    量子點中的極化子效應是當前量子點研究中的重要問題，其特徵急需了解.文章在綜述了量子點中限域極化子的概念、可能性和能量隨尺寸的變化規律之後，提出了界面限域極化子模型，該模型首次指明本徵聲子和外來聲子都可能對界面限域極化子的形成有貢獻.作者利用此模型分析了多孔硅體系中的光譜特徵，證實了表面覆有氧化層的納米硅的行為十分符合量子限域極化子的特徵.這一極化子模型與單個納米硅結構的發光譜十分一致，此結果對最終揭示多孔硅發光機理有重要意義
  13. Referring to the formation process of qd, it is accepted that there formed a groove around the dot during the formation process due to mass - transfer. when the dots were capped by a compound with larger band gap, there will appear a potential maximum due to larger confinement. the maximum will prevent the carriers from entering the dot, and the origin of the kink point is resulted from the prevention

    根據s - k模式量子點的形成過程，我們認為在點的形成過程中由於質量遷移會在點的周圍形成一個凹槽，加上覆蓋層后，由於大的量子限域效應該處將形成一個勢能極大值，該勢能極大值將阻礙載流子從勢壘層向量子點的注入，該過程是導致上述拐點出現的原因。
  14. In the paper, the preparation, photoluminescence mechanism and third - order nonlinear of porous silicon are mainly introduced. in the first chapter, a brief history, background, preparation and formation of porous silicon are provided and several effective luminescent models are also introduced as well. then the experiment results showed that the mechanism of the photoluminescence of porous silicon was ascribed to the co - effect of quantum confinement and the surface materials of porous silicon

    第一章介紹了多孔硅的研究背景、研究意義、研究歷史以及制備方法和形成機制，並且介紹了幾種較有影響力的發光機制模型，然後提出我們的觀點：多孔硅的發光機制不能僅用某一種因素去解釋，應該綜合考慮各方面的影響，多孔硅發光是量子限域效應和表面態綜合作用的結果。
  15. Quantum confinement effects of the lowest conduction band states in semiconductor quantum dots

    半導體量子點最低導帶態的量子限制效應
  16. Beale model, diffusion confinement model and quantum confinement effect model are used to explain how porous silicon comes into being

    對于多孔硅是怎樣形成的問題，現在主要有beale模型、擴散限制模型和量子限制模型進行解釋。
  17. The complex model of luminescence centers and quantum confinement has been proposed to interpret the origin of the green and red - emitting of the ps after modification. the deduction is supported by analyzing the morphology and the surface species of the modified samples through afm, sem, and ftir, xps

    通過afm 、 sem及ftir 、 xps對這兩種多孔硅樣品進行表面形貌和化學成分分析，採用發光中心（ lc ）量子限制效應的復合模型對上述修飾多孔硅的pl峰移現象進行了理論說明。
  18. The performance of modulators employing mqw is governed by the quantum confined stark effect. in order to simplify the analysis of mqw, we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states. then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator

    本論文首先根據量子限制stark效應，發展了等效寬度思想，提出了把單量子阱結構的有限深勢阱的分析轉化為無限深勢阱模型的顯式公式，從而大大簡化了電場下量子阱結構的分析；接著利用轉移矩陣，把周期性的量子阱結構簡化為三層結構，得到了實際採用的非對稱三阱結構量子阱的場分佈，並討論了量子阱結構的偏振特性。
  19. As for the pl mechanism, except the red band, the rest are all originated from luminescence defects related to impurity, and the luminescence centers are affected by configuration of impurities, while the red emitting band may attribute to the quantum confinement effect of nano - si, but will also rely on its interface characteristic

    就發光機制而言，除紅光寬帶外，均起源於氧、氮摻雜引起的缺陷發光中心，發光中心受雜質組態影響，紅光寬帶可能聯繫到量子限制效應，同時還依賴于界面特性。
  20. The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered. that makes the band gap wide. atom transfer rate is affected by the substrate temperature, and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm

    低溫生長的氧化鋅晶粒小，考慮到量子限制效應，禁帶寬較大；襯底溫度影響吸附原子遷移能力，隨著溫度升高，晶粒的尺寸增大，分佈變的均勻，因而發光峰位隨著襯底溫度的升高而紅移，發光的半高寬變小。
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