量熱靶 的英文怎麼說

中文拼音 [liáng]
量熱靶 英文
calorimetric target
  • : 量動1. (度量) measure 2. (估量) estimate; size up
  • : 1. (射擊的目標) target 2. (轡革; 韁繩) bridle; halter; reins
  1. Observation of the on - off sequencing of characteristic spectral lines from tracer materials arranged in layers in, or surface patterns on, planar or spherical targets can provide a record of radial or lateral energy transport processes in laser - generated plasmas

    激光聚變產生的軟x射線時間變化連續譜的形狀,可以知道許多x射線產生過程的詳細動態記錄,這有助於理解實驗的學條件。觀察軌跡特徵譜線的閉合序列,能提供關于激光等離子體激發能和滯后能的傳輸過程記錄。
  2. According to the demand of the concept design of china spallation neutron source ( csns ), the target station, i. e. the target, the reflector and the moderator have been simulated and optimized using monte carlo simulation software, nmtc / jam and mcnp4a, firstly. the neutron flux escaping from the target and the moderator and the heat deposition in the target, the reflector and the moderator are calculated. these results provided essential data as a basis of the spallation neutron source design

    本論文結合當前中國散裂中子源( chinaspallationneutronsource , csns )工程概念設計的迫切需要,選擇國際上廣泛使用的基於蒙特?卡羅方法,用於模擬粒子輸運過程的程序mcnp4a和nmtc jam作為研究工具,首次對csns站進行了全面的模擬與優化,內容包括、反射體與慢化器系統的中子通分佈以及沉積,同時計算了的溫度場與應力場分佈。
  3. After 40 hour irradiation time, about 7 ci of radioactive isotope 64cu was produced via 63cu ( n, y ) 64cu reaction. after simple disposal, the irradiated copper sample was installed in the high - intesity ion sputter source on the hi - 13 tandem accelerator. then 64cu ions extracted from the high - intesity ion sputter source and injected into the tandem accelerator, 64cu ions can be accelerated to an energy of 80 mev and formed the off - line rnb since natural

    S )的中於通下,經過34個半衰期輻照,通過『 u … , y )生成放射性l司位素『 cll ,然後將放射性銅錐注入串列加速器強流濺射離于源中,引出mcll負離于,經刁串列加速器加速而得到能為80mcv的離線放射性核束「 cll叭。
  4. The focal length of a thermal imaging system was assessed by the magnification method using 4 - bar targets as infrared objectives

    摘要採用實驗室中四桿紅外目標源,使其成像在成像系統自身的焦面探測器上,採用放大倍率法測與計算出系統的焦距。
  5. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備,在ar ~ +離子束對v _ 2o _ 5濺射沉積的同時,用氬、氫混合束對沉積膜作高劑的離子束轟擊,使得被氬離子轟擊后斷鍵的氧化釩分子,再被注入氫降價,然後經適當的退火,成功地制備了電阻溫度系數高達4的vo _ 2薄膜(國外報道值為2 - 3 ) ,並研製了單元懸空結構探測器和8 1 , 16 1線性陣列。
  6. In this paper, such three points are studied as : a ) the angular distributions of the hot electrons emission under laser irradiation at different incidence angles and at different polarization direction, the angular distribution of the hot electrons in the different energy range, and the effects of laser prepulse on the angular distributions of the hot electrons emission ; b ) the energy distribution of the hot electrons at different directions, from the metallic targets and the dielectric targets, in the different energy range of the hot electrons, and the effects of the atomic number z on the energy distribution of hot electron generated by the metallic targets ; and c ) the energetic proton emission resulting from the interaction of the us - ui laser pulse with plasma

    本論文進行了三個方面的研究:第一,超電子角分佈的研究,包括不同激光入射角下超電子的角分佈;激光不同偏振態下超電子的角分佈;激光預脈沖對超電子角分佈的影響;不同能段的超電子的角分佈。第二,超電子能分佈的研究,包括不同方位超電子的能分佈,金屬與非金屬材的超電子的能分佈,金屬原子序數z對超電子能分佈的影響以及不同能段超電子的能分佈。第三,研究了超短超強激光與固體相互作用所產四川大學博士學位論文生的高能質子發射和能譜。
  7. For getting temperature of transient thermal - radiation, lodging the method of measuring the temperature of the time - resolved thermal - radiation with least duple multiply theory, and measuring the temperature of wu lamp with this method, the results showed that the method have best properties for measuring temperature, and measuring the temperature of time - resolved spectrum of matter under pulse laser shocking with this method, getting the primary results

    為了解析瞬態輻射溫度,提出用最小二乘法對由多道分析器採集的時間分辨輻射譜進行全譜溫度擬合的方法,在以鎢帶燈為輻射源的溫度測中實現了較高精度的溫度擬合,用此方法對激光沖擊材所產生輻射的時間分辨譜溫度進行測,得到了初步結果。
  8. In the way based the scientific and tecdrical talks on i presided at and panicipated in, the graduation theis included a p1entful thets in recent years wtll be divided into three parts for depiction conxteniently and clearly, according to the content as fo1lowsf ( l ) the study of shock compression properties with the drixtiir - liquid co and n, experimentally ( 2 ) the study of the phenomenon of excess heat produced by deuteriurn atoms entering into the lattice of titaluxn experimentally ( 3 ) the calcujation for the electronic structure and energy of hydrogen atoms cluster ffi. the mainstream in the first part of the paper is to exposure some experimental tecndques in high pressure and high temperatur shock compression physics, including by using a cryo - target cooled down circulating steaxned n, to condense the well - proportioned mixed liquid sample from pure gas co and n = with equal molar voiurne

    根據近幾年所承擔和參加的科研任務,將研究成果總結寫成的論文按以下三個部分敘述: ( 1 )液體co和n _ 2混合物沖擊壓縮特性的實驗研究(由國防科技重點實驗室基金項目96js75 . 2 . 1 . jw1902資助) ( 2 )重氫原子進入鈦晶格中引起過現象的實驗研究(由國家自然科學基金10145002資助) ( 3 )氫原子團簇h _ 9的電子結構與能計算第一部分以高溫高壓沖擊波物理實驗為主,採用自行研製的低溫循環汽冷冷凝制樣技術由高純co和n _ 2氣體獲取等摩爾體積均勻混合的液體沖擊初態樣品。
  9. The neutron flux extracted to different angles has been calculated. finally, the heat depositions in the target, the reflector and the moderator have been calculated. based on these results, the temperature and stress distribution hi tungsten target under different cooling condition have been calculated too

    最後計算了、反射體以及不同慢化器(水、液態氫、液態甲烷)中的沉積,並以此為依據,利用工程軟體ideas進一步計算了各種冷卻條件下,中溫度場與應力場分佈。
  10. It is another exemplification that the calculating result by using this method for isotopic target irradiated in reactor is also coincidental to the experimental result ( error less then 5 % )

    結合工等分析,用該計算方法對同位素件的輻照試驗進行了驗證,核發的計算結果與實驗結果的誤差在5以內。
  11. By differential scanning calorimetry ( dsc ), respectively. without any supplementary method, a ti - rich alloy target ( ti - 48at % ni ) were used to enrich ti content in films during sputtering. as the first step, tini thin film is deposited on a glass substrate by sputtering, and annealed at 600

    採用絲材冷軋法,制備了75 m 、 90 m兩種厚度的tini形狀記憶薄膜,示差掃描( dsc )法測得其馬氏體逆相變峰值溫度分別為35 、 109 ,在濺射工藝中,採用富ti的tini合金( ti - 48at ni )而不是其它成分補償措施,來增加tini薄膜中的ti含
  12. This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a three - flow controller, side - installed heating tube, computer pid automatic temperature control, and two sets of flat magnetic controlled target, contra - variant magnetic - controlled power source, and contra - variant bias power with easy operation and top grade film layer. they are widely used in decorative film layer, and compound film layer in plating

    該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦自動換檔真空計,三路流控制器,邊裝式加管,電腦pid自動控溫,配備兩套邊裝式平面磁控,逆變式磁控電源和逆變式偏壓電源,操作簡單,膜層細膩,廣泛適用於鍍制各種裝飾膜層和復合膜層。
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