金剛石薄膜 的英文怎麼說
中文拼音 [jīngāngdànbómó]
金剛石薄膜
英文
diamond film- 金 : Ⅰ名詞1 (金屬) metals 2 (錢) money 3 (古時金屬制的打擊樂器) ancient metal percussion instrum...
- 石 : 石量詞(容量單位, 十斗為一石) dan, a unit of dry measure for grain (= l00 sheng)
- 薄 : 名詞[方言] (浮萍) duckweed
- 膜 : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
- 金剛石 : diamond; adamas; carbite; adamant; spark金剛石材料 diamond; 金剛石產地 diamond field; 金剛石結構 ...
- 金剛 : (佛的侍從力士) buddha's warrior attendant
- 薄膜 : thin film; film; diaphragm
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And these limit the diamond film application. in order to grow high quality diamond film, this experiment using cleanout and negative bias to improve nucleus
為了得到高質量的金剛石薄膜本研究對于石英玻璃的表面進行了清洗並用了負偏壓增強形核的方法。Effect of carbon source concentration on mechanical properties of hfcvd diamond thin film coated tools
碳源濃度對金剛石薄膜塗層刀具性能的影響Effect of bias on texture growth of mpcvd diamond films
金剛石薄膜織構生長的影響General situation of cvd diamond film coating tools
金剛石薄膜塗層工具的研究概況Selection of cvd diamond film substrates
金剛石薄膜基體材料的選擇Laser induced damage for diamond films
金剛石薄膜抗激光破壞研究Ellipsometric spectrum study on diamond - like carbon films
橢偏譜法測量類金剛石薄膜的質量Field emission characteristic and mechanism of a novel diamond films cathode
新型金剛石薄膜場電子發射的特性The mechanisms of diamond nucleation and growth are discussed, and it is believed that the continued ion bombardment during the deposition process is a key factor for the growth of nanocrystalline diamond film using ch4 and h2
探討了金剛石的核化機制和納米金剛石的形成機制,認為沉積過程中的持續的離子轟擊是ch _ 4和h _ 2體系制備納米金剛石薄膜的關鍵。( 2 ) the distribution, flux and flowrate of the gases are exactly under control. in order to grow high - quality diamond film on si substrate, the quality of diamond film on a mirror - polished single - crystal si surface is examined experimentally, and the enhancement mechanisms of positive or negative bias on nuclear formation is interpreted theoretically
為了在si襯底上生長高質量的金剛石薄膜,對在鏡面拋光si表面上的成核進行了深入的實驗研究,對襯底偏壓(正、負)的增強成核作用給出了自己的解釋。One of the important applications of diamond coatings is as cutting tools for nonmetals, nonferrous metals and alloys
金剛石薄膜的一個重要用途是用做加工非金屬、非鐵金屬和合金的刀具塗層。Moreover, by adjusting the technological parameters, polycrystalline diamond films grown preferentially along the different crystal orientations can be prepared
而且通過調節工藝參數,可制備出沿不同晶向擇優生長的多晶金剛石薄膜。Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed
採用輔助偏壓熱絲cvd技術,制備擇優生長的多晶金剛石薄膜,研究了金剛石薄膜的成核及生長機理,並將其應用於功率電子器件的熱沉。It is thought that the emission process happened with the participation of diamond crystal, graphite, amorphous carbon and intra - face states in the diamond films
認為非晶碳、石墨、金剛石及相應界面態構成一個完整的體系參與場發射,金剛石薄膜中雜相的存在有利於電子的場發射。Influence of in - situ oxygen plasma processing on the resistivity of diamond thin film
原位氧等離子體處理對金剛石薄膜電阻率的影響In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed
本工作採用蒙特卡羅( monte - carlo )計算機模擬的方法,對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積( eacvd )金剛石薄膜中的氣相分解過程進行了研究,初步建立了eacvd氣相動力學模型,並討論了eacvd中的低溫沉積過程。Oriented growth of diamond film on si via plasma enhanced hot filament chemical vapor deposition
等離子體增強熱絲化學氣相沉積法生長取向金剛石薄膜The diamond film is grown using a hot filament chemical vapor deposition, basing on the diamond micro - grits on silicon substrates
實驗中外延金剛石薄膜採用熱絲cvd法生長,生長於事先電泳沉積在硅襯底的金剛石微粒上。Abstract : the major failure mechanisms of diamond coated cu tting tools are flaking and breakthrough of diamond coating
文摘:金剛石薄膜塗層刀具失效主要形式是膜剝落或膜被磨穿。It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature
( 3 )對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬,得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈,計算結果對摻雜過程的研究有重要的參考價值。分享友人