金屬導電因子 的英文怎麼說

中文拼音 [jīnzhǔdǎodiànyīnzi]
金屬導電因子 英文
metal conduction factor
  • 金 : Ⅰ名詞1 （金屬） metals 2 （錢） money 3 （古時金屬制的打擊樂器） ancient metal percussion instrum...
  • 屬 : 屬名詞1 （類別） category 2 [生物學] （生物分類系統上所用的等級之一） genus 3 （家屬; 親屬） fami...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 因 : Ⅰ動詞[書面語] （沿襲） follow; carry on Ⅱ介詞1 [書面語] （憑借; 根據） on the basis of; in accord...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 金屬 : metal
  1. The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity

    結果表明，共混復合后，其光電導性能表現出負效應，並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因，同時復合體系中的電子空穴對的分離效率是影響光電性能的一個重要因素。
  2. The results show that effects of alkali metal salts on conductivity are different because of their different anion radium, crystal lattice energy, ionic mobility and solubility in electrolytes, that different ionic conduction modes of electrolytes result to double - peak of salt concentration dependence of conductivity and different temperature dependence, and that different influences of plasticizer to conductivity result from their different action

    結果表明，不同堿金屬鹽對電解質電導率的影響因其陽離子半徑、晶格能、離子淌度以及在電解質中的溶解度的不同而不同;電導率的鹽濃度依賴性因電解質的離子傳導方式不同而明顯呈現雙峰形;增塑劑對電導率的影響則因其作用方式不同而產生不同的效果;電導率的溫度依賴性也因電解質的離子傳導方式不同而呈現不同的規律。
  3. The photocatalytic activities of the xw11 / tio2 ( x = p, si, ge ) composite films were tested via degradation of aqueous azo - dyes, congo red ( cr ) and naphthol blue black ( nbb ). it was observed that the photocatalytic activities of the three composite films are much higher than that of the pure tio2 film, mainly attributed to the synergetic effect between xw11 and tio2, i. e., xw11 - catalyzed electron transfer from the conduction band ( cb ) of photoexicited tio2 to itself

    結果表明三種復合膜均具有遠高於純tio _ 2膜的活性，主要歸因於復合膜材料中多金屬氧酸鹽和tio _ 2之間存在的協同效應，即作為強電子受體的多金屬氧酸鹽接受tio _ 2受光激發形成的導帶光生電子，延長了空穴-電子的再復合時間，同時自身仍具有光活性。
  4. 3. the distance of metal wire and ground is smaller, the effective permeability leff, quality factor q and resonance frequency srf is also smaller ; the coil turns increases leff will increase, the q value and resonance frequency srf will drop ; the line width increases leff will drop, resonance frequency srf will increase and the q value is nearly invariable ; the via size, the pad layer size and thickness is little effect the effective permeability leff and resonance frequency srf but seriously influence q value

    3金屬導線離地的距離越小，有效電感值leff 、品質因子q 、自諧振頻率srf也越小;線圈圈數增加， leff增加， q值和自諧振頻率srf下降;線寬增加， leff下降自諧振頻率增大q值幾乎不變;通孔大小、覆蓋層的大小及厚度對有效電感值leff和自諧振頻率srf沒有多大影響，但對q值影響較大。
  5. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  6. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
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